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公开(公告)号:US12237153B2
公开(公告)日:2025-02-25
申请号:US17978778
申请日:2022-11-01
Inventor: Sung min Lee , Yoon Suk Oh
IPC: H01J37/32 , C23C14/06 , C23C14/08 , C23C14/24 , C23C14/26 , C23C14/30 , C23C14/50 , H01J37/147 , H01J37/06
Abstract: The present invention relates to a method of forming a plasma resistant oxyfluoride coating layer, including: mounting a substrate on a substrate holder provided in a chamber; causing an electron beam scanned from an electron gun to be incident on an oxide evaporation source accommodated in a first crucible, and heating, melting, and vaporizing the oxide evaporation source as the electron beam is incident on the oxide evaporation source; vaporizing a fluoride accommodated in a second crucible; and advancing an evaporation gas generated from the oxide evaporation source and a fluorine-containing gas generated from the fluoride toward the substrate, and reacting the evaporation gas generated from the oxide evaporation source and the fluorine-containing gas generated from the fluoride to deposit an oxyfluoride on the substrate. According to the present invention, it is possible to form a dense and stable oxyfluoride coating layer having excellent plasma resistance, suppressed generation of contaminant particles, and no cracks.