公开(公告)号：US20230145380A1

公开(公告)日：2023-05-11

申请号：US18053222

申请日：2022-11-07

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Jong Min YOOK ,  Je In YU ,  Dong Su KIM

IPC: H01P3/12 ,  H01L23/498 ,  H01L23/043 ,  H01L21/48 ,  H01P11/00

CPC classification number: H01P3/121 ,  H01L23/49827 ,  H01L23/043 ,  H01L21/486 ,  H01P11/002

Abstract: A waveguide package and a method for manufacturing the same are disclosed. The waveguide package includes a package structure including a waveguide opened toward one side surface of a substrate, a semiconductor chip mounted on one surface of the package structure and configured to output an electrical signal to the waveguide. Since an interior of the waveguide is filled with air, electrical loss of the waveguide is minimized The cavity is formed by processing the substrate made of photosensitive glass. Accordingly, the waveguide may be accurately formed. An electronic circuit may also be formed at the waveguide package. Accordingly, it may be possible to provide a waveguide package enhanced in degree of integration.

公开(公告)号：US20220328253A1

公开(公告)日：2022-10-13

申请号：US17709338

申请日：2022-03-30

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Jong Min YOOK ,  Je In YU ,  Jun Chul KIM ,  Dong Su KIM

IPC: H01G4/33 ,  H01G4/005

Abstract: The present invention provides a method for manufacturing a high frequency capacitor, including preparing a substrate for formation of the capacitor, forming a dielectric layer at an upper surface of the substrate, forming an upper electrode at an upper surface of the dielectric layer, and removing a portion of a lower surface of the substrate, to expose a lower surface of the dielectric layer, and forming a lower electrode at the lower surface of the dielectric layer. The high frequency capacitor includes a dielectric layer having a uniform surface, a thick upper electrode, and a thick lower electrode and, as such, exhibits high quality factor (Q) even at a high frequency.

公开(公告)号：US20240282724A1

公开(公告)日：2024-08-22

申请号：US18439938

申请日：2024-02-13

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Jong Min YOOK ,  Je In YU ,  Dong Su KIM

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/367 ,  H01L23/498

CPC classification number: H01L23/66 ,  H01L23/367 ,  H01L23/49827 ,  H01L24/32 ,  H01L2223/6677 ,  H01L2224/32225 ,  H01L2924/181

Abstract: An antenna-integrated high-frequency semiconductor package, including a substrate including a recess concave on a first surface and a first through-hole penetrating from the first surface to a second surface, a ground layer configured to cover the first surface of the substrate and the recess, a semiconductor chip mounted on the ground layer of the recess, an insulating layer configured to entirely cover the substrate, the ground layer, and the semiconductor chip, and a conductive layer formed on the insulating layer, the conductive layer including an electrode pattern connected to the semiconductor chip, an antenna formed on a second surface of the insulating layer, and a signal via configured to transmit an electrical signal between the electrode pattern and the antenna through a second through-hole formed in the first through-hole to penetrate from the first surface to the second surface of the insulating layer.