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公开(公告)号：US09442369B1
公开(公告)日：2016-09-13
申请号：US13949332
申请日：2013-07-24
Applicant: KLA-Tencor Corporation
Inventor： Dmitry Shur , Joel Seligson
CPC classification number: G03F1/68
Abstract: An electro-deposition apparatus deposits a first pattern of a lithographic mask. The electro-deposition apparatus then deposits a second pattern of the lithographic mask, at least partially offset from the first pattern. The resulting lithographic mask includes a first pattern having a minimum feature resolution size and maximum pitch, and a second pattern having the same minimum feature resolution size and maximum pitch. The first pattern and second pattern are at least partially offset such that a fractional portion of the second pattern is realized and light transmission is more precisely controlled.
Abstract translation: 电沉积装置沉积光刻掩模的第一图案。 然后，电沉积装置沉积至少部分地偏离第一图案的光刻掩模的第二图案。 所得到的光刻掩模包括具有最小特征分辨率尺寸和最大间距的第一图案，以及具有相同的最小特征分辨率尺寸和最大间距的第二图案。 第一图案和第二图案至少部分地偏移，使得实现第二图案的分数部分，并且更精确地控制光透射。
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公开(公告)号：US09214317B2
公开(公告)日：2015-12-15
申请号：US14290556
申请日：2014-05-29
Applicant: KLA-Tencor Corporation
Inventor： Dmitry Shur
CPC classification number: H01J37/26 , G01N21/66 , G06T7/0004 , H01J37/28 , H01J2237/2809 , H01J2237/2814 , H01J2237/2817 , H01L22/34
Abstract: The present disclosure is directed to a method of performing SEM overlay metrology with scan direction substantially aligned with or parallel to feature placement or patterning of overlay target structures. By scanning target structures in the same or similar direction to the feature placement, blurring at the edges of interest is avoided and a line-to-line or edge-to-edge offset between pattern elements is less susceptible to error from blurring at scanned edges of interest. For example, at least two linear pattern elements corresponding to at least two sample layers may be scanned along or parallel to the direction of feature placement (i.e., along or parallel to long edges of the pattern elements).
Abstract translation: 本公开涉及一种执行SEM覆盖度量的方法，其扫描方向基本上对准或平行于覆盖目标结构的特征放置或图案化。 通过以与特征放置相同或相似的方向扫描目标结构，避免了感兴趣的边缘处的模糊，并且图案元素之间的线对边或边缘到边缘的偏移不太容易受到扫描边缘的模糊的误差的影响 出于兴趣。 例如，对应于至少两个采样层的至少两个线性图案元素可以沿着或平行于特征放置的方向扫描（即沿着或平行于图案元件的长边缘）。
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公开(公告)号：US20140353498A1
公开(公告)日：2014-12-04
申请号：US14290556
申请日：2014-05-29
Applicant: KLA-Tencor Corporation
Inventor： Dmitry Shur
CPC classification number: H01J37/26 , G01N21/66 , G06T7/0004 , H01J37/28 , H01J2237/2809 , H01J2237/2814 , H01J2237/2817 , H01L22/34
Abstract: The present disclosure is directed to a method of performing SEM overlay metrology with scan direction substantially aligned with or parallel to feature placement or patterning of overlay target structures. By scanning target structures in the same or similar direction to the feature placement, blurring at the edges of interest is avoided and a line-to-line or edge-to-edge offset between pattern elements is less susceptible to error from blurring at scanned edges of interest. For example, at least two linear pattern elements corresponding to at least two sample layers may be scanned along or parallel to the direction of feature placement (i.e., along or parallel to long edges of the pattern elements).
Abstract translation: 本公开涉及一种执行SEM覆盖度量的方法，其扫描方向基本上对准或平行于覆盖目标结构的特征放置或图案化。 通过以与特征放置相同或相似的方向扫描目标结构，避免了感兴趣的边缘处的模糊，并且图案元素之间的线对边或边缘到边缘的偏移不太容易受到扫描边缘的模糊的误差的影响 出于兴趣。 例如，对应于至少两个采样层的至少两个线性图案元素可以沿着或平行于特征放置的方向扫描（即沿着或平行于图案元件的长边缘）。
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