Abstract:
An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.
Abstract:
Some aspects of the present disclosure relate to a system having a substrate device, a substrate support surface, and a substrate handler that positions the substrate device on the substrate support surface. The substrate device and the substrate support surface may have counterpart coarse position units and fine position units. The system may measure coarse positional offsets between the first and second coarse position units, re-position the substrate device on the substrate support surface based on the coarse positional offsets, and subsequently measure fine positional offsets between the first and second fine position units. In some implementations, the substrate device is integrally coupled to the substrate handler via a wireless communication link in order to communicate position information as feedback for further placement.
Abstract:
A sensor for detecting a temperature distribution imparted on a substrate in an environment is disclosed. The sensor includes a sensor substrate with one or more temperature sensing elements formed on the sensor substrate. In embodiments, a temperature sensing element includes at least one cavity with a thermally expandable material disposed within the cavity and a channel extending from the cavity with a slug disposed within the channel. In embodiments, the cavity has a fixed volume and is enclosed by a cover layer disposed or formed over the cavity. The thermally expandable material is configured to extend from the cavity into the channel to actuate the slug from a first position within the channel to at least a second position within the channel, where the position of the slug is indicative of a temperature of a respective portion of the sensor substrate.
Abstract:
An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.
Abstract:
A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.
Abstract:
An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.
Abstract:
A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly.
Abstract:
A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.
Abstract:
An etch rate monitor apparatus has a substrate, an optical element and one or more optical detectors mounted to a common substrate with the one or more detectors sandwiched between the substrate and optical element to detect changes in optical interference signal resulting from changes in optical thickness of the optical element. The optical element is made of a material that allows transmission of light of a wavelength of interest. A reference waveform and data waveform can be collected with the apparatus and cross-correlated to determine a thickness change. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Abstract:
A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. The collector portion is the top surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).