Methods and systems for compact, small spot size soft x-ray scatterometry

    公开(公告)号:US12013355B2

    公开(公告)日:2024-06-18

    申请号:US17411030

    申请日:2021-08-24

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, Soft X-Ray (SXR) illumination over a small illumination spot size with a small physical footprint are presented herein. In one aspect, the focusing optics of an SXR based metrology system project an image of the illumination source onto a specimen under measurement with a demagnification of at least 1.25. In a further aspect, an illumination beam path from the x-ray illumination source to the specimen under measurement is less than 2 meters. In another aspect, SXR based measurements are performed with x-ray radiation in the soft x-ray region (i.e., 80-3000 eV). In some embodiments, SXR based measurements are performed at grazing angles of incidence in a range from near zero degrees to 90 degrees. In some embodiments, the illumination optics project an image of an illumination source onto a specimen under measurement with a demagnification of 50, or less.

    System and Method for Pumping Laser Sustained Plasma with Interlaced Pulsed Illumination Sources

    公开(公告)号:US20200274314A1

    公开(公告)日:2020-08-27

    申请号:US16791488

    申请日:2020-02-14

    Abstract: A system for pumping laser sustained plasma is disclosed. The system includes a plurality of pump modules configured to generate respective pulses of pump illumination for the laser sustained plasma, wherein at least one pump module is configured to generate a train of pump pulses that is interlaced in time with another train of pump pulses generated by at least one other pump module of the plurality of pump modules. The system further includes a plurality of non-collinear illumination paths configured to direct the respective pulses of pump illumination from the plurality of pump modules into a collection volume of the laser sustained plasma.

    Laser Produced Plasma Illuminator With Low Atomic Number Cryogenic Target

    公开(公告)号:US20210136902A1

    公开(公告)日:2021-05-06

    申请号:US17076774

    申请日:2020-10-21

    Abstract: Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a low atomic number, cryogenic target are presented herein. A highly focused, short duration laser pulse is directed to a low atomic number, cryogenically frozen target, igniting a plasma. In some embodiments, the target material includes one or more elements having an atomic number less than 19. In some embodiments, the low atomic number, cryogenic target material is coated on the surface of a cryogenically cooled drum configured to rotate and translate with respect to incident laser light. In some embodiments, the low atomic number, cryogenic LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a low atomic number, cryogenic LPP illumination source as described herein.

    Laser produced plasma illuminator with liquid sheet jet target

    公开(公告)号:US11259394B2

    公开(公告)日:2022-02-22

    申请号:US17076767

    申请日:2020-10-21

    Abstract: Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a liquid sheet jet target are presented herein. A highly focused, short duration laser pulse is directed to a liquid sheet jet target. The interaction of the focused laser pulse with the sheet jet target ignites a plasma. In some embodiments, the liquid sheet jet is generated by a convergent capillary nozzle or a convergent, planar cavity nozzle. In some embodiments, the target material includes one or more elements having a relatively low atomic number. In some embodiments, the liquid sheet jet LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a liquid sheet jet LPP illumination source as described herein.

    Methods And Systems For Compact, Small Spot Size Soft X-Ray Scatterometry

    公开(公告)号:US20220196576A1

    公开(公告)日:2022-06-23

    申请号:US17411030

    申请日:2021-08-24

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, Soft X-Ray (SXR) illumination over a small illumination spot size with a small physical footprint are presented herein. In one aspect, the focusing optics of an SXR based metrology system project an image of the illumination source onto a specimen under measurement with a demagnification of at least 1.25. In a further aspect, an illumination beam path from the x-ray illumination source to the specimen under measurement is less than 2 meters. In another aspect, SXR based measurements are performed with x-ray radiation in the soft x-ray region (i.e., 80-3000 eV). In some embodiments, SXR based measurements are performed at grazing angles of incidence in a range from near zero degrees to 90 degrees. In some embodiments, the illumination optics project an image of an illumination source onto a specimen under measurement with a demagnification of 50, or less.

    Laser produced plasma illuminator with low atomic number cryogenic target

    公开(公告)号:US11272607B2

    公开(公告)日:2022-03-08

    申请号:US17076774

    申请日:2020-10-21

    Abstract: Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a low atomic number, cryogenic target are presented herein. A highly focused, short duration laser pulse is directed to a low atomic number, cryogenically frozen target, igniting a plasma. In some embodiments, the target material includes one or more elements having an atomic number less than 19. In some embodiments, the low atomic number, cryogenic target material is coated on the surface of a cryogenically cooled drum configured to rotate and translate with respect to incident laser light. In some embodiments, the low atomic number, cryogenic LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a low atomic number, cryogenic LPP illumination source as described herein.

    Variable aperture mask
    8.
    发明授权

    公开(公告)号:US11268901B2

    公开(公告)日:2022-03-08

    申请号:US15930379

    申请日:2020-05-12

    Abstract: A collection system of a semiconductor metrology tool includes a chuck to support a target from which an optical beam is reflected and a spectrometer to receive the reflected optical beam. The collection system also includes a plurality of aperture masks arranged in a rotatable sequence about an axis parallel to an optical axis. Each aperture mask of the plurality of aperture masks is rotatable into and out of the reflected optical beam between the chuck and the spectrometer to selectively mask the reflected optical beam.

    Laser Produced Plasma Illuminator With Liquid Sheet Jet Target

    公开(公告)号:US20210136901A1

    公开(公告)日:2021-05-06

    申请号:US17076767

    申请日:2020-10-21

    Abstract: Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a liquid sheet jet target are presented herein. A highly focused, short duration laser pulse is directed to a liquid sheet jet target. The interaction of the focused laser pulse with the sheet jet target ignites a plasma. In some embodiments, the liquid sheet jet is generated by a convergent capillary nozzle or a convergent, planar cavity nozzle. In some embodiments, the target material includes one or more elements having a relatively low atomic number. In some embodiments, the liquid sheet jet LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a liquid sheet jet LPP illumination source as described herein.

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