公开(公告)号：US09371427B2

公开(公告)日：2016-06-21

申请号：US14636034

申请日：2015-03-02

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Katsutoshi Kobayashi ,  Yusuke Kasahara ,  Hiroki Yonemitsu ,  Hitoshi Kubota ,  Ayako Kawanishi

IPC: C23F1/00 ,  C08J7/00 ,  B81C1/00 ,  C23F4/00

CPC classification number: C23F1/00 ,  B81C1/00396 ,  C23F4/00 ,  G03F7/0002

Abstract: A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.

Abstract translation: 通过在第一膜上形成第一图案形成图案，在第一图案上形成包含第一嵌段链和第二嵌段链的嵌段共聚物层，形成第二图案，在第二图案上形成第二膜，选择性地除去 直到第二图案曝光的第二膜，形成第三图案，并且使用第三图案作为掩模来处理第一膜。 第二图案通过微相分离嵌段共聚物层并除去第一嵌段链或第二嵌段链形成。 通过施加具有小于第一图案和第二图案的材料的蚀刻速率的蚀刻速率的材料来形成第二膜。 通过使用第二膜作为掩模选择性地去除第二图案和第一图案来形成第三图案。

公开(公告)号：US20140057443A1

公开(公告)日：2014-02-27

申请号：US13775763

申请日：2013-02-25

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hitoshi KUBOTA ,  Katsutoshi Kobayashi ,  Yusuke Sekiguchi

IPC: H01L21/308

CPC classification number: H01L21/308 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/31144

Abstract: According to one embodiment, a pattern forming method includes forming a physical guide including a first predetermined pattern in a first region on a to-be-processed film, and a second predetermined pattern in a second region on the to-be-processed film, forming a block copolymer in the physical guide, forming a self-assembled phase including a first polymer portion and a second polymer portion by causing microphase separation of the block copolymer, removing the second polymer portion, and processing the to-be-processed film, with the physical guide and the first polymer portion serving as a mask. A pattern height of the first predetermined pattern is greater than a pattern height of the second predetermined pattern.

Abstract translation: 根据一个实施例，图案形成方法包括在被处理膜的第一区域中形成包括第一预定图案的物理引导件，以及在待处理膜片上的第二区域中形成第二预定图案， 在所述物理引导件中形成嵌段共聚物，通过使所述嵌段共聚物进行微相分离，除去所述第二聚合物部分，以及处理所述被处理膜，形成包含第一聚合物部分和第二聚合物部分的自组装相， 其中物理引导件和第一聚合物部分用作掩模。 第一预定图案的图案高度大于第二预定图案的图案高度。

公开(公告)号：US09129909B2

公开(公告)日：2015-09-08

申请号：US14177755

申请日：2014-02-11

Applicant: Kabushiki Kaisha Toshiba

Inventor： Katsutoshi Kobayashi

IPC: G03F7/00 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  G03F7/004

CPC classification number: H01L21/31111 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/004 ,  H01L21/02118 ,  H01L21/02225 ,  H01L21/0271 ,  H01L21/3081 ,  H01L21/31144

Abstract: In a patterning method according to the present embodiment, a guide pattern is formed on a processing target film. The guide pattern is configured by concave portions and convex portions extending in a predetermined direction. A block copolymer layer is formed on the guide pattern. The block copolymer layer contains at least two block chains. A layer of microphase-separated structures is formed on the concave portions and the convex portions, respectively, by microphase-separating the block copolymer layer. The processing target film is formed into predetermined patterns by selectively removing the processing target film. At least a part of the block copolymer layer is used as a mask.

Abstract translation: 在根据本实施例的图案化方法中，在处理目标膜上形成引导图案。 引导图案由沿预定方向延伸的凹部和凸部构成。 在引导图案上形成嵌段共聚物层。 嵌段共聚物层含有至少两个嵌段链。 通过微相分离嵌段共聚物层，分别在凹部和凸部形成微相分离结构层。 通过选择性地去除处理目标膜，将处理目标膜形成为预定图案。 至少一部分嵌段共聚物层用作掩模。