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    Copolymer useful for positive photoresist and chemical amplification positive photoresist composition comprising the same
    2.
    发明授权
    Copolymer useful for positive photoresist and chemical amplification positive photoresist composition comprising the same 失效
    用于正性光致抗蚀剂的共聚物和包含其的化学扩增正性光致抗蚀剂组合物

    公开(公告)号：US5989775A

    公开(公告)日：1999-11-23

    申请号：US998546

    申请日：1997-12-26

    申请人： Joo-Hyeon Park ,  Ji-Hong Kim ,  Ki-Dae Kim ,  Sun-Yi Park ,  Seong-Ju Kim

    发明人： Joo-Hyeon Park ,  Ji-Hong Kim ,  Ki-Dae Kim ,  Sun-Yi Park ,  Seong-Ju Kim

    IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A copolymer having a repeating unit represented by the following general formula I and a chemical amplification positive photoresist composition having the copolymer and a photoacid generator. The photoresist can allow for a good pattern shape even though a post-baking is taken in a somewhat delayed time and for a use of any radiation, such as uv light, deep uv light and charged particle beam. Also, it is superior in storage stability and resolution so that it is useful for the high integration of semiconductor devices. The polymer ranges, in polystyrene-reduced average molecular weight, from 1,000 to 1,000,000. The polymer is represented by the following repeating pattern: ##STR1## wherein, R.sub.1, R.sub.2 and R.sub.3 independently represent a hydrogen atom or a methyl; R.sub.4, R.sub.5 and R.sub.6 independently represent a hydrogen atom, an alkyl group, an alkoxy group or a halogen; 1, m, n each is a repeating number satisfying the condition that 0.3

    摘要翻译： 具有由以下通式I表示的重复单元的共聚物和具有共聚物和光致酸发生剂的化学扩增正性光致抗蚀剂组合物。 即使在稍微延迟的时间内进行后烘烤并且使用诸如紫外光，深紫外光和带电粒子束的任何辐射，光致抗蚀剂可以允许良好的图案形状。 此外，它在存储稳定性和分辨率方面是优异的，因此它对于半导体器件的高集成是有用的。 聚苯乙烯换算的聚合物的平均分子量为1,000至1,000,000。 聚合物由以下重复图案表示：其中，R1，R2和R3独立地表示氢原子或甲基; R4，R5和R6独立地表示氢原子，烷基，烷氧基或卤素; 1，m，n分别为满足0.3 <1 /（m + n）<0.9,0.1

    Positive photoresist composition
    5.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号：US5677103A

    公开(公告)日：1997-10-14

    申请号：US723679

    申请日：1996-09-30

    申请人： Seong-Ju Kim ,  Joo-Hyeon Park ,  Ji-Hong Kim ,  Sun-Yi Park

    发明人： Seong-Ju Kim ,  Joo-Hyeon Park ,  Ji-Hong Kim ,  Sun-Yi Park

    IPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/023 ,  G03F7/022

    摘要： A positive photoresist composition which is of high resolution, high sensitivity and wide focusing range and suitable for high integration of semiconductor devices and shows superior resist pattern profile, comprising quinonediazide sulfonic acid ester as a photoresist, an alkali soluble resin, a solvent, and additives, said quinonediazide sulfonic acid ester being prepared through the esterification of 1,2-naphthoquinonediazidesulfonyl halide or 1,2-benzoquinonediazidesulfonyl halide with an aromatic hydroxy compound represented by the following structural formula I: ##STR1## wherein R.sub.1 and R.sub.2 are independently hydrogen, halogen, an alkyl group or an alkoxy group; a is an integer of 1 to 3; b is an integer of 1 to 8; c is an integer of 1 to 12; and R.sub.3 is an alkyl group containing ether, mercapthane, sulfoxide, sulfone, aryl group or hydroxy group.

    摘要翻译： 具有高分辨率，高灵敏度和宽聚焦范围的正光致抗蚀剂组合物，并且适用于半导体器件的高集成度，并且显示出优异的抗蚀剂图案轮廓，其包含醌二叠氮化物磺酸酯作为光致抗蚀剂，碱溶性树脂，溶剂和添加剂 所述醌二叠氮化物磺酸酯是通过1,2-萘醌二叠氮基卤化物或1,2-苯醌二叠氮化物磺酰卤与由以下结构式I表示的芳族羟基化合物的酯化制备的：其中R 1和R 2独立地为 氢，卤素，烷基或烷氧基; a为1〜3的整数， b为1〜8的整数， c为1〜12的整数， R3是含有醚基的烷基，巯基，亚砜，砜，芳基或羟基。

    Chemically amplified positive photoresist composition
    6.
    发明授权
    Chemically amplified positive photoresist composition 失效
    化学扩增的正性光致抗蚀剂组合物

    公开(公告)号：US06268106B1

    公开(公告)日：2001-07-31

    申请号：US09337434

    申请日：1999-06-21

    申请人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    发明人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： A chemical amplification positive amplification which can be formed into resist patterns much improved in transparency, photosensitivity and resolution and is suitable to KrF and ArF excimer lasers, enabling a submicrolithography process to be as exquisite as 0.2 &mgr;m or less. This composition is based on a copolymer of the formula I, ranging, in polystyrene-reduced weight average molecular weight, from 3,000 to 50,000 with a molecular weight distribution (Mw/Mn) of 1.0 to 2.0, and a low molecular weight compound of the formula VI:

    摘要翻译： 化学放大阳性扩增可以形成抗蚀剂图案，其透明度，光敏度和分辨率大大提高，适用于KrF和ArF准分子激光器，使得亚微光刻工艺的精细度可达0.2μm或更小。 该组合物是基于式I的共聚物，以聚苯乙烯换算的重均分子量为3,000至50,000，分子量分布（Mw / Mn）为1.0至2.0，以及低分子量化合物 公式VI：

    Polymer for radiation-sensitive resist and resist composition containing the same
    7.
    发明授权
    Polymer for radiation-sensitive resist and resist composition containing the same 有权
    用于辐射敏感抗蚀剂的聚合物和含有它的抗蚀剂组合物

    公开(公告)号：US06369143B1

    公开(公告)日：2002-04-09

    申请号：US09337437

    申请日：1999-06-21

    申请人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Dong-Chul Seo ,  Sun-Yi Park

    发明人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Dong-Chul Seo ,  Sun-Yi Park

    IPC分类号： C08J541

    CPC分类号： G03F7/039 ,  C08G61/08 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115

    摘要： A radiation-sensitive polymer and a chemical amplification resist composition based on the polymer, which can be easily controlled in sensitivity by regulating the content and kind of the carboxylic acid-grafted norbornene derivatives in the matrix polymer and is superior in adherence to substrate and dry etch resistance, so that it can be formed into resist patterns improved in transparency, photosensitivity and resolution by use of KrF or ArF excimer lasers. The polymer is represented by the formula I: wherein, X is an acid-dissociable grafted norbornene derivative selected from the group consisting of the formulas II and III; Y is a carboxylic acid-grafted norbornene derivative represented by the formula IV, and l, m, n and o each are a repeating number not more than 0.5, satisfying the condition that l+m+n+o=l and 0.4≦o≦0.5:

    摘要翻译： 基于聚合物的辐射敏感聚合物和化学扩增抗蚀剂组合物，其可以通过调节基质聚合物中羧酸接枝的降冰片烯衍生物的含量和种类而容易地控制灵敏度，并且在对基材和干燥的粘附性方面优异 因此可以通过使用KrF或ArF准分子激光器将其形成为提高透明度，光敏性和分辨率的抗蚀剂图案。 聚合物由式I表示：其中X是选自式II和III的酸解离的接枝的降冰片烯衍生物; Y是由式Ⅳ表示的羧酸接枝的降冰片烯衍生物，l，m，n和o各自为不大于0.5的重复数，满足1 + m + n + o = 1和0.4 <= o <= 0.5：

    Sulfonium salt and its manufacturing method
    9.
    发明授权
    Sulfonium salt and its manufacturing method 有权
    锍盐及其制造方法

    公开(公告)号：US6111143A

    公开(公告)日：2000-08-29

    申请号：US140955

    申请日：1998-08-27

    申请人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    发明人： Joo-Hyeon Park ,  Dong-Chul Seo ,  Sun-Yi Park ,  Seong-Ju Kim

    IPC分类号： C07C381/00 ,  C07C309/06 ,  C07C381/12 ,  G03F7/004 ,  G03F7/029 ,  C07C315/00

    CPC分类号： C07C381/12 ,  Y02P20/55

    摘要： This invention relates to a sulfonium salt, including its manufacturing method, which is effectively used as a photoacid initiator or radical photoinitiator during polymerization and a photoacid generator, leaving the protection groups of organic compounds, especially as an useful photoacid generator of the chemically amplified photoresist employed in semiconductor materials. Since the sulfonium salt of this invention, so prepared via one-step reaction between sulfoxide compound and aromatic compound in the presence of perfluoroalkanesulfonic anhydride, has the advantages in that by overcoming some shortcomings of the prior art to prepare the sulfonium salt via two steps using Grinard reagent, this invention may provide a novel sulfonium salt with higher yield which cannot be achieved in the prior art and also to prepare even any conventional sulfonium salt having better yield.

    摘要翻译： 本发明涉及一种锍盐，包括其制造方法，其在聚合期间有效地用作光酸引发剂或自由基光引发剂，并且光酸产生剂，留下有机化合物的保护基团，特别是作为化学放大光致抗蚀剂的有用的光致酸产生剂 半导体材料。 由于在全氟烷基磺酸酐存在下通过亚砜化合物和芳族化合物之间的一步反应制备的本发明的锍盐的优点在于克服现有技术的一些缺点，通过两步使用 格林纳特试剂，本发明可以提供一种在现有技术中无法实现的更高产率的新型锍盐，并且甚至制备任何具有较好产率的常规锍盐。

    Positive photoresist resin and chemical amplified positive photoresist composition containing the same
    10.
    发明授权
    Positive photoresist resin and chemical amplified positive photoresist composition containing the same 失效
    正光致抗蚀剂树脂和含有相同的化学放大正光致抗蚀剂组合物

    公开(公告)号：US5882835A

    公开(公告)日：1999-03-16

    申请号：US932415

    申请日：1997-09-17

    申请人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Ki-Dae Kim ,  Sun-Yi Park

    发明人： Joo-Hyeon Park ,  Seong-Ju Kim ,  Ki-Dae Kim ,  Sun-Yi Park

    IPC分类号： C08F8/00 ,  C08F12/22 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  C08F16/02 ,  C08F16/12

    CPC分类号： G03F7/039 ,  C08F8/00 ,  G03F7/0045 ,  Y10S430/106

    摘要： A chemical amplified positive photoresist composition including a resin having the repeating unit of Formula I and a photoacid generator. The resin ranges, in polystyrene-reduced molecular weight, from about 2,000 to 1,000,000. In Formula I, k and l each represent a mole ratio satisfying the condition of k+l=l. R.sub.1 is a hydrogen atom or a methyl group. R.sub.2 and R.sub.3 are independently either a hydrogen atom, a halogen atom, an alkyl group or an alkoxy group. R.sub.4 is an acetate group, a t-butoxycarbonyl group, a benzyl group, a trialkylsilyl group or an alkyl group. The photoacid generator which generates an acid by radiation. ##STR1##

    摘要翻译： 一种化学放大型正性光致抗蚀剂组合物，其包含具有式I的重复单元的树脂和光酸产生剂。 树脂的聚苯乙烯缩小分子量范围为约2,000至1,000,000。 在式I中，k和l各自表示满足条件k + l = 1的摩尔比。 R1是氢原子或甲基。 R2和R3独立地为氢原子，卤素原子，烷基或烷氧基。 R4是乙酸基，叔丁氧基羰基，苄基，三烷基甲硅烷基或烷基。 通过辐射产生酸的光酸产生剂。 （一）