公开(公告)号：US06573476B2

公开(公告)日：2003-06-03

申请号：US09960369

申请日：2001-09-24

申请人： Jongwon Kim ,  Chulgyu Park

发明人： Jongwon Kim ,  Chulgyu Park

IPC分类号： B23K3534

CPC分类号： B23K35/368 ,  B23K35/3608

摘要： The flux cored wire comprises, with respect to the total weight of the wire, a Ti and a Ti oxide of 3.0 wt % to 8.0 wt % as calculated in terms of TiO2 content, a Si and a Si oxide of 0.5 wt % to 2.0 wt % as calculated in terms of SiO2 content, a metal Mn and an alloy of Mn of 1.5 wt % to 3.5 wt % as calculated in terms of Mn content, a carbon (C) of 0.02 wt % to 0.10 wt %, an Mg and an Mg oxide of 0.5 wt % to 1.5 wt % as calculated in terms of MgO content, a compound of Na2O and K2O of 0.2 wt % and less, a Zr and a Zr oxide of 0.1 wt % to 0.5 wt % as calculated in terms of ZrO2 content, and an Al and an Al oxide of 0.2 wt % to 0.8 wt % as calculated in terms of Al2O3 content.

摘要翻译： 药芯焊丝相对于导线的总重量包含以TiO 2含量计算的3.0重量％至8.0重量％的Ti和Ti氧化物，0.5重量％至2.0重量％的Si和Si氧化物 以Mn含量计算的Mn含量为1.5重量％〜3.5重量％的Mn的金属Mn和合金，碳量（C）为0.02重量％〜0.10重量％，Mg 和按MgO​​计算的0.5重量％〜1.5重量％的Mg氧化物，Na2O和K2O的化合物为0.2重量％以下，Zr和Zr氧化物为0.1重量％〜0.5重量％，计算公式如下： 以ZrO 2含量计，以Al 2 O 3含量计算的Al和Al氧化物为0.2重量％〜0.8重量％。

公开(公告)号：US06559417B2

公开(公告)日：2003-05-06

申请号：US09867670

申请日：2001-05-31

申请人： Jongwon Kim ,  Chulgyu Park

发明人： Jongwon Kim ,  Chulgyu Park

IPC分类号： B23K3502

CPC分类号： B23K35/3086 ,  B23K35/3607 ,  B23K35/3608 ,  B23K35/368

摘要： The present invention discloses a flux cored wire for arc welding of austenitic stainless steel which can restrain bending and high temperature cracking, and prevent a bead from being drooped. A flux filled in a sheath consisting of 18-8 stainless steel(C≦0.03 wt %, N≦0.02 wt %) comprises an alkali metal compound in an oxide converted amount of 0.05 to 1.0 wt % by weight of the welding wire, a metal fluoride in a fluorine converted amount below 0.08 wt %, Bi oxide in an amount below 0.1 wt %, Mn in an amount of 0.1 to 1.8 wt %, Cr in an amount of 2.0 to 4.0 wt %, SiO2 in an amount of 0.5 to 3.0 wt %, Al2O3 in an amount of 0.1 to 2.0 wt %, and TiO2 and ZrO2 wherein a ratio of (TiO2+ZrO2)/SiO2 is 0.8 to 1.6. Here, an amount of the flux filled in the sheath ranges from 15 to 35 wt % by weight of the welding wire. Accordingly, the flux cored wire restrains bending and high temperature cracking of the stainless steel weld metal, prevents the bead from being drooped, and reduces an amount of fume generated, thereby improving the vertical-up weldability.

公开(公告)号：US06414269B1

公开(公告)日：2002-07-02

申请号：US09791710

申请日：2001-02-26

申请人： Jongwon Kim

发明人： Jongwon Kim

IPC分类号： B23K3502

摘要： The present invention discloses a pit and blow hole resistant flux-cored wire for gas-shielded arc welding of a galvanized steel sheet. Here, an amount of flux ranges from 10 to 20% by weight of the wire, and an amount of a mild steel sheath ranges from 80 to 90% by weight of the wire. The flux comprising iron powder, deoxidizer and arc stabilizer in a residual amount is filled in the mild steel sheath. In detail, the flux contains a slag generation agent in an amount of 2 to 15% by weight of the wire, silicon oxide in an amount of 1.0 to 10 wt %, a component containing at least two components containing metal titanium, selected from the group consisting of metal titanium, metal magnesium and alloy mixtures thereof in an amount of 0.4 to 3 wt %, and one of sodium fluoride and potassium fluoride in an amount of 0.1 to 1 wt %. Accordingly, even when a plated layer is thick, it is possible to minimize generation of pits and blow holes in the welding. Moreover, generation of fumes and spatters can be controlled, which results in improved weldability. As a result, the pit and blow hole resistant flux-cored wire can be efficiently used for a consecutive or automated welding process.

公开(公告)号：US20100224962A1

公开(公告)日：2010-09-09

申请号：US12699558

申请日：2010-02-03

申请人： Jongwon Kim

发明人： Jongwon Kim

IPC分类号： H01L27/06

CPC分类号： H01L27/101 ,  H01L23/5228 ,  H01L27/0802 ,  H01L27/11573 ,  H01L27/11578 ,  H01L27/11582 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate comprising a cell region and a peripheral circuit region, a first resistance layer and a second resistance layer spaced apart from each other and sequentially stacked on the semiconductor substrate of the peripheral circuit region, a first plug connected to the first resistance layer, and a second plug connected to the first and second resistance layers in common.

摘要翻译： 半导体器件包括：半导体衬底，包括单元区域和外围电路区域;第一电阻层和第二电阻层，彼此间隔开并依次堆叠在外围电路区域的半导体衬底上;第一插头， 第一电阻层和与第一和第二电阻层共同连接的第二插头。

公开(公告)号：US06476356B2

公开(公告)日：2002-11-05

申请号：US09842854

申请日：2001-04-27

申请人： Jongwon Kim

发明人： Jongwon Kim

IPC分类号： B23K3502

CPC分类号： B23K35/3608 ,  B23K35/3607 ,  B23K35/361 ,  B23K35/368

摘要： A flux cored wire for gas-shielded arc welding is disclosed. The flux cored wire is excellent in a zinc resistant primer performance and a low temperature impact toughness and comprises a flux filled in a mild steel sheath. The flux comprises: an oxide of TiO2+SiO2+Al2O3 in an amount of 2% to 10% by weight of the wire; at least one component in an amount of 0.1% to 1.0% by weight of the wire, the one component being selected from a metal fluoride group consisting of CaF2, NaF, K2SiF6, Na2SiF6 and KF, a metal titanium in an amount of 0.1% to 0.25 t % by weight of the wire; a metal boron in an amount of 0.002% to 0.008% by weight of the wire; and a subsidiary component in an amount of 5% to 20% by weight of the wire, the subsidiary component consisting of an iron component, a deoxidizer and an arc stabilizer.

公开(公告)号：US09543316B2

公开(公告)日：2017-01-10

申请号：US14668938

申请日：2015-03-25

申请人： Hyunmin Lee ,  Changseok Kang ,  Jongwon Kim ,  Hyeong Park

发明人： Hyunmin Lee ,  Changseok Kang ,  Jongwon Kim ,  Hyeong Park

IPC分类号： H01L27/115 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L23/535 ,  H01L27/11565 ,  H01L2924/0002 ,  H01L2924/00

摘要： Inventive concepts provide semiconductor memory devices and methods of fabricating the same. A stack structure and vertical channel structures are provided on a substrate. The stack structure includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. The vertical channel structures penetrate the stack structure. Conductive pads are disposed on the vertical channel structures. An etch stopper covers sidewalls of the conductive pads. Pad contacts are disposed on the conductive pads to be in contact with the conductive pads. The pad contacts are further in contact with the etch stopper.

摘要翻译： 本发明的概念提供半导体存储器件及其制造方法。 堆叠结构和垂直通道结构设置在基板上。 堆叠结构包括在基板上交替重复堆叠的绝缘层和栅电极。 垂直通道结构穿透堆叠结构。 导电垫设置在垂直通道结构上。 蚀刻停止器覆盖导电焊盘的侧壁。 焊盘触点设置在导电焊盘上以与导电焊盘接触。 焊盘触点进一步与蚀刻停止器接触。

公开(公告)号：US20160293627A1

公开(公告)日：2016-10-06

申请号：US15087127

申请日：2016-03-31

申请人： Jongwon Kim ,  Keejeong Rho ,  Jin-Yeon Won ,  Tae-Wan Lim ,  Woohyun Park

发明人： Jongwon Kim ,  Keejeong Rho ,  Jin-Yeon Won ,  Tae-Wan Lim ,  Woohyun Park

IPC分类号： H01L27/115 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L27/11565

摘要： Semiconductor memory devices and methods for manufacturing the same are provided. The device may include vertical channel structures that are two-dimensionally arranged on a substrate and vertically extend from the substrate. The device may also include bit lines on the vertical channel structures, and each of the bit lines may be commonly connected to the vertical channel structures arranged in a first direction. The device may further include common source lines that extend between the vertical channel structures in a second direction intersecting the first direction and a source strapping line that is disposed at the same vertical level as the bit lines and electrically connects the common source lines to each other.

摘要翻译： 提供半导体存储器件及其制造方法。 该装置可以包括二维布置在基板上并从基板垂直延伸的垂直通道结构。 该装置还可以包括在垂直通道结构上的位线，并且每个位线可以共同连接到沿第一方向布置的垂直通道结构。 该装置还可以包括在与第一方向相交的第二方向上在垂直通道结构之间延伸的公共源极线和与位线设置在相同垂直电平并将公共源极线彼此电连接的源极捆扎线 。

公开(公告)号：US20110241597A1

公开(公告)日：2011-10-06

申请号：US12750454

申请日：2010-03-30

申请人： Zhengmao Zhu ,  Jongwon Kim ,  Kayvan Abbassian

发明人： Zhengmao Zhu ,  Jongwon Kim ,  Kayvan Abbassian

IPC分类号： H02P8/14

CPC分类号： H02P8/12 ,  H02P8/16

摘要： A drive circuit for step motors with bifilar windings is provided in which both parallel and series winding configurations for the stator coils are selectable by a motor controller based on the motor speed. For low speeds a series configuration is selected, while for higher speeds a parallel configuration is selected. Dynamic torque is optimized by the selection for more efficient motor operation with less drive current.

摘要翻译： 提供了具有双线绕组的步进电动机的驱动电路，其中定子线圈的并联绕组和串联绕组配置可以由马达控制器基于电机速度来选择。 对于低速度，选择串联配置，而对于较高速度，选择并联配置。 通过选择更有效的电机运行来优化动态转矩，减少驱动电流。

公开(公告)号：US20110137553A1

公开(公告)日：2011-06-09

申请号：US13002399

申请日：2009-06-29

申请人： Jongwon Kim

发明人： Jongwon Kim

IPC分类号： G08G1/0969 ,  G01C21/36

CPC分类号： G01C21/3697 ,  G01C21/3682 ,  G01C21/3694 ,  G08G1/096716 ,  G08G1/096741 ,  G08G1/096775 ,  G08G1/096811 ,  G08G1/096827 ,  G08G1/096844 ,  G08G1/096883 ,  G08G1/0969 ,  H04W4/80

摘要： A traffic condition data providing method using a wireless communication device and a navigation device performing the method are disclosed. The navigation device includes a travelling path displaying unit that searches a travelling path to a destination set by a user and displays the travelling path on map data, a traffic condition data receiving unit that receives traffic condition data from a content managing server through a wireless communication device in response to a request of providing the traffic condition data over the travelling path, and a traffic condition data providing unit that provides the user with the received traffic condition data.

摘要翻译： 公开了一种使用无线通信装置和执行该方法的导航装置的交通状况数据提供方法。 导航装置包括：行进路径显示单元，其搜索到由用户设定的目的地的行进路径，并将行驶路径显示在地图数据上;交通条件数据接收单元，其通过无线通信从内容管理服务器接收交通状况数据 响应于通过行驶路径提供交通状况数据的请求的设备，以及向用户提供接收到的交通状况数据的交通状况数据提供单元。

公开(公告)号：US6135683A

公开(公告)日：2000-10-24

申请号：US183194

申请日：1998-10-30

申请人： Jongwon Kim ,  Chongwoo Park ,  Wok-Kwan Bae ,  Seon-joong Liu ,  Jinwook Kim ,  Jae-chul Hwang ,  Changbum Park ,  Han-Sang Cho ,  Gyu-Young Lee ,  Kiha Lee ,  Yonghun Lee ,  Cornel Iurascu

发明人： Jongwon Kim ,  Chongwoo Park ,  Wok-Kwan Bae ,  Seon-joong Liu ,  Jinwook Kim ,  Jae-chul Hwang ,  Changbum Park ,  Han-Sang Cho ,  Gyu-Young Lee ,  Kiha Lee ,  Yonghun Lee ,  Cornel Iurascu

IPC分类号： B23Q1/54 ,  B23Q17/22 ,  B23C1/12

CPC分类号： B23Q1/5462 ,  B23Q17/22 ,  Y10T408/93 ,  Y10T409/303808 ,  Y10T409/307672 ,  Y10T409/308512 ,  Y10T409/309576

摘要： A six-degree-of-freedom parallel mechanism is provided for expanding a grade of a spindle. The parallel mechanism has a spindle that turns round a workpiece at a tilting angle of 90.degree. in a workspace, to thereby allow a machining for both vertical and horizontal planes of the workpiece, and a vertical turning process, by a single machining center. A six-axis multi-machining type machining center embodying the parallel mechanism of the present invention is also disclosed. An over-actuated multi-machining type machining center further including over-actuated actuators is presented to solve a problem of driving joints' singularity caused by the parallel mechanism.

摘要翻译： 提供六自由度并联机构用于扩大主轴等级。 平行机构具有在工作空间中以90度的倾斜角度转动工件的主轴，从而允许通过单个加工中心对工件的垂直和水平面进行加工以及垂直车削加工。 还公开了体现本发明的并联机构的六轴多加工型加工中心。 提出了一种进一步包括过度致动的致动器的过激励多加工型加工中心，以解决由并联机构引起的接头奇异性的驱动问题。