公开(公告)号：US5717278A

公开(公告)日：1998-02-10

申请号：US445241

申请日：1995-05-19

申请人： Johann Bartha ,  Johann Greschner ,  Volkhard Wolf

发明人： Johann Bartha ,  Johann Greschner ,  Volkhard Wolf

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J3/02 ,  H01J31/12

CPC分类号： B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30407

摘要： The invention relates to the structure of a field emitter device, to the method of fabricating a field emitter device and to the use of the field emitter device in the technical field of flat panel displays. The field emission device comprises an array (1) of widely-spaced tips (2) for emitting electrons and a perforated extracting electrode (3) facing the array of tips. An individual series resistor is formed by each of said tips itself. The widely-spaced tips are not surrounded by a layer of electrically insulating material. The tips are not surrounded by an insulating layer and the tip end is not surrounded by a gate or extraction electrode. This avoids failures like shorts between the cathode electrode and the gate or extraction electrode which could occur due to inaccurate coating or etching processes, and enhances the reliability and the life-time of the array of tips. To fabricate the field emission device, a micromechanically manufactured array (1) of widely-spaced tips (2) and a micromechanically manufactured perforated extracting electrode (3) are provided. The outer sides of the perforated extracting electrode are bonded to the array in a way that the perforated extracting electrode is facing the array. With the array of widely-spaced tips and the perforated extracting electrode being fabricated separately and bonded together subsequently, both the number of process steps required for each of the two parts and the manufacturing process costs are reduced.

摘要翻译： 本发明涉及场致发射器件的结构，制造场发射极器件的方法以及在平板显示器的技术领域中使用场发射极器件。 场发射装置包括用于发射电子的广泛间隔的尖端（2）的阵列（1）和面向阵列阵列的穿孔提取电极（3）。 单个串联电阻器由每个所述尖端本身形成。 宽间隔的尖端不被一层电绝缘材料包围。 尖端不被绝缘层包围，并且尖端不被栅极或引出电极包围。 这避免了由于不准确的涂层或蚀刻工艺而可能发生的阴极电极和栅极或引出电极之间的短路故障，并且增强了尖端阵列的可靠性和寿命。 为了制造场发射器件，提供了一种微机械制造的宽间距尖端（2）的阵列（1）和微机械制造的穿孔提取电极（3）。 穿孔提取电极的外侧以穿孔提取电极面向阵列的方式结合到阵列。 利用广泛间隔的尖端阵列和穿孔提取电极单独制造并且随后结合在一起，减少了两个部件中的每一个所需的工艺步骤数量和制造工艺成本。

公开(公告)号：US5791959A

公开(公告)日：1998-08-11

申请号：US711828

申请日：1996-09-10

申请人： Johann Bartha ,  Johann Greschner ,  Volkhard Wolf

发明人： Johann Bartha ,  Johann Greschner ,  Volkhard Wolf

IPC分类号： H01J1/304 ,  H01J9/02

CPC分类号： B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30407

摘要： To fabricate a field emission device a micromechanically manufactured array (1) of widely-spaced tips (2) and a micromechanically manufactured perforated extracting electrode (3) are provided. The outer sides of the perforated extracting electrode are bonded to the array in a way that the perforated extracting electrode is facing the array. With the array of widely-spaced tips and the perforated extracting electrode being fabricated separately and bonded together subsequently, both the number of process steps required for each of the two parts and the manufacturing process costs are reduced.

摘要翻译： 为了制造场发射装置，提供了一种微机械制造的广泛间隔的尖端（2）的阵列（1）和一个微机械制造的穿孔提取电极（3）。 穿孔提取电极的外侧以穿孔提取电极面向阵列的方式结合到阵列。 利用广泛间隔的尖端阵列和穿孔提取电极单独制造并且随后结合在一起，减少了两个部件中的每一个所需的工艺步骤数量和制造工艺成本。

公开(公告)号：US5707537A

公开(公告)日：1998-01-13

申请号：US477058

申请日：1995-06-07

申请人： Johann Bartha ,  Johann Greschner ,  Klaus Meissner ,  Volkhard Wolf

发明人： Johann Bartha ,  Johann Greschner ,  Klaus Meissner ,  Volkhard Wolf

IPC分类号： H01L21/68 ,  H01L21/687 ,  H01L21/00 ,  H05K7/02

CPC分类号： H01L21/6835

摘要： The supporting plate and the bulk removal, transport and storage fixture for small batch-fabricated devices (1) have openings (2) penetrating from the top side (3) to the bottom side (4) of the plate and raised retaining means (5) on the bottom side (4). The raised retaining means (5) are provided in sufficient number and are arranged according to the shape of the devices (1) for retaining the devices. Flange means (7) which are designed for providing vacuum or agents to the devices (1) on the supporting plate are connected to the supporting plate thus forming a fixture. By changing the arrangement of the raised retaining means (5) and/or the openings (2) the supporting plate and the fixture may easily be adapted to different sizes and kinds of devices.

摘要翻译： 用于小批量装置（1）的支撑板和散装移除，运输和储存装置具有从板的顶侧（3）穿过底部侧（4）的开口（2），并且将保持装置（5 ）在底面（4）上。 提升保持装置（5）设置足够数量，并根据用于保持装置的装置（1）的形状布置。 设计用于向支撑板上的装置（1）提供真空或试剂的法兰装置（7）连接到支撑板，从而形成夹具。 通过改变凸起保持装置（5）和/或开口（2）的布置，支撑板和夹具可以容易地适应于不同尺寸和种类的装置。

公开(公告)号：US5635337A

公开(公告)日：1997-06-03

申请号：US57729

申请日：1993-05-05

申请人： Johann Bartha ,  Johann Greschner ,  Karl H. Probst ,  Gerhard Schmid

发明人： Johann Bartha ,  Johann Greschner ,  Karl H. Probst ,  Gerhard Schmid

IPC分类号： H01L21/302 ,  G03F7/00 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： G03F7/00

摘要： A structure of openings is produced in two or more layers of silylated, polyimide photoresist. Openings in subsequent layers, which overlap previous openings, are of larger size. Then the structure is transferred to an organic substrate using oxygen plasma etching with up to 3% CF.sub.4. The smallest opening transferred to the substrate extends through the substrate.

公开(公告)号：US5296091A

公开(公告)日：1994-03-22

申请号：US768490

申请日：1991-09-30

申请人： Johann Bartha ,  Thomas Bayer ,  Johann Greschner ,  Dieter Kern ,  Volker Mattern ,  Roland Stoehr

发明人： Johann Bartha ,  Thomas Bayer ,  Johann Greschner ,  Dieter Kern ,  Volker Mattern ,  Roland Stoehr

IPC分类号： C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  B01J15/00

CPC分类号： H01L21/67069

摘要： Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.

摘要翻译： 公开了一种真空反应器，用于蚀刻具有低热蚀性的基板以达到高的蚀刻速度均匀性，其中待蚀刻的基板以与施加有RF能量的阴极预定的间隔布置在保持器中。 根据本发明的优选实施例，阴极在待蚀刻的基底的区域中升高到与基底的底侧约0.2mm的间隔。 阴极由铝制成，并且设置在用作黑色散热器的层的被蚀刻基板的区域中。 在RIE期间形成的热量被辐射除去，从阴极反射到衬底的辐射被层吸收。 还公开了一种蚀刻具有低热导率的衬底，特别是塑料衬底的方法。

公开(公告)号：US6061074A

公开(公告)日：2000-05-09

申请号：US778982

申请日：1997-01-06

申请人： Johann Bartha ,  Frank Druschke ,  Gerhard Elsner ,  Johann Greschner

发明人： Johann Bartha ,  Frank Druschke ,  Gerhard Elsner ,  Johann Greschner

IPC分类号： B41J2/415 ,  H01J3/04 ,  H01J27/26

CPC分类号： B41J2/415 ,  H01J27/26 ,  H01J3/04

摘要： An ion generator for the generation of a plasma is assembled from module subassemblies. The first subassembly includes a dielectric plate 1, on the first surface 1a of which are located a large number of first electrodes 3, and the second surface 1b of which is coated with a structured conductive layer 2. The second subassembly includes an aperatured spacer plate with a large number of dielectric spacers with a second electrode 5 on the side facing away from the dielectric plate 1. In joining the subassemblies together, the aperatured spacer plate is connected to the dielectric plate 1 at its first surface 1a in such a way that cavities 6 for accommodating plasma are formed by the first electrodes 3, parts of the first surface 1a of the dielectric plate 1 and the spacers 4 with the second electrodes 5. The first set of electrodes 3 shield the points where the subassemblies are bonded together from plasma in the cavities.

摘要翻译： 用于产生等离子体的离子发生器由模块子组件组装。 第一子组件包括电介质板1，其第一表面1a位于大量的第一电极3上，其第二表面1b涂覆有结构化导电层2.第二子组件包括温度分隔板 具有大量的电介质隔离物，其在背离电介质板1的一侧具有第二电极5.在将子组件接合在一起时，高温隔离板在其第一表面1a处以电连接板1连接到电介质板1， 用于容纳等离子体的空腔6由电介质板1的第一表面1a的一部分和具有第二电极5的间隔物4的第一电极3形成。第一组电极3将组件结合在一起的点 空腔中的等离子体。

公开(公告)号：US5658472A

公开(公告)日：1997-08-19

申请号：US477059

申请日：1995-06-07

申请人： Johann Bartha ,  Johann Greschner ,  Robert Junginger ,  Georg Kraus

发明人： Johann Bartha ,  Johann Greschner ,  Robert Junginger ,  Georg Kraus

IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/82

CPC分类号： H01L21/3065 ,  H01L21/30655 ,  H01L21/3081

摘要： A method is provided for producing deep substantially vertical structures in silicon substrates, wherein in a first step, the silicon substrate is anisotropically plasma etched to a first predetermined depth, thereby creating a first structure. Subsequently, the surface of the substrate is covered conformally with an etch-resistant coating, and the horizontal parts of said coating are selectively removed. Following this removal, the substrate is anisotropically plasma etched at low temperatures to a second predetermined depth with a mixture of SF.sub.6 /O.sub.2, whereby a second structure is created. Finally, the vertical parts of the coating are removed.

摘要翻译： 提供一种用于在硅衬底中产生深基本上垂直的结构的方法，其中在第一步骤中，将硅衬底各向异性地等离子体蚀刻到第一预定深度，从而产生第一结构。 随后，基材的表面与耐蚀刻涂层共形地覆盖，并且选择性地去除所述涂层的水平部分。 在该去除之后，将衬底在低温下各向异性地刻蚀至具有SF6 / O2混合物的第二预定深度，由此产生第二结构。 最后，去除涂层的垂直部分。

公开(公告)号：US5641610A

公开(公告)日：1997-06-24

申请号：US640647

申请日：1996-05-01

申请人： Johann Bartha ,  Johann Greschner ,  Karl Heinz Probst ,  Gerhard Schmid

发明人： Johann Bartha ,  Johann Greschner ,  Karl Heinz Probst ,  Gerhard Schmid

IPC分类号： H01L21/302 ,  G03F7/00 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： G03F7/00

摘要： A structure of openings is produced in two or more layers of silylated, polyimide photoresist. Openings in subsequent layers, which overlap previous openings, are of larger size. Then the structure is transferred to an organic substrate using oxygen plasma etching with up to 3% CF.sub.4. The smallest opening transferred to the substrate extends through the substrate.

摘要翻译： 在两层或更多层的甲硅烷基化聚酰亚胺光刻胶中产生开口结构。 与先前开口重叠的后续层中的开口具有更大的尺寸。 然后使用高达3％CF4的氧等离子体蚀刻将结构转移到有机基底。 转移到衬底的最小的开口延伸穿过衬底。

公开(公告)号：US5304278A

公开(公告)日：1994-04-19

申请号：US935661

申请日：1992-08-24

申请人： Johann Bartha ,  Thomas Bayer ,  Johann Greschner ,  Dieter Kern ,  Volker Mattern ,  Roland Stoehr

发明人： Johann Bartha ,  Thomas Bayer ,  Johann Greschner ,  Dieter Kern ,  Volker Mattern ,  Roland Stoehr

IPC分类号： C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  B05C1/00

CPC分类号： H01L21/67069

摘要： Disclosed is a vacuum reactor for etching substrates having a low thermal conductivity to a high degree of etch rate uniformity, wherein the substrates to be etched are arranged in a holder at a predetermined spacing from the cathode to which RF energy is applied. According to a preferred embodiment of the invention, the cathode is raised in the area of the substrate to be etched to within a spacing of about 0.2 mm from the bottom side of the substrate. The cathode is made of aluminium, and is provided in the area of the substrate to be etched with a layer which acts as a black radiator. The heat formed during RIE is removed by radiation, and the radiation reflected from the cathode to the substrate is absorbed by the layer. Also disclosed is a method of etching substrates having a low thermal conductivity, in particular plastic substrates.

摘要翻译： 公开了一种真空反应器，用于蚀刻具有低热蚀性的基板以达到高的蚀刻速度均匀性，其中待蚀刻的基板以与施加有RF能量的阴极预定的间隔布置在保持器中。 根据本发明的优选实施例，阴极在待蚀刻的基底的区域中升高到与基底的底侧约0.2mm的间隔。 阴极由铝制成，并且设置在用作黑色散热器的层的被蚀刻基板的区域中。 在RIE期间形成的热量被辐射除去，从阴极反射到衬底的辐射被层吸收。 还公开了一种蚀刻具有低热导率的衬底，特别是塑料衬底的方法。