公开(公告)号：US20160284790A1

公开(公告)日：2016-09-29

申请号：US14778578

申请日：2014-03-12

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya SHIMODA ,  Eisuke TOKUMITSU ,  Masatoshi ONOUE ,  Takaaki MIYASAKO

IPC分类号： H01L49/02 ,  H01L21/02 ,  H01L29/51

CPC分类号： H01L28/40 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02269 ,  H01L28/56 ,  H01L28/60 ,  H01L28/87 ,  H01L28/91 ,  H01L29/513

摘要： The invention provides a dielectric layer having high relative permittivity with low leakage current and excellent flatness. A dielectric layer 30a according to the invention is made of multilayer oxide including a first oxide layer 31 made of oxide consisting of bismuth (Bi) and niobium (Nb) or oxide consisting of bismuth (Bi), zinc (Zn), and niobium (Nb) (possibly including inevitable impurities) and a second oxide layer 32 made of oxide of one type (possibly including inevitable impurities) selected from the group of oxide consisting of lanthanum (La) and tantalum (Ta), oxide consisting of lanthanum (La) and zirconium (Zr), and oxide consisting of strontium (Sr) and tantalum (Ta).

摘要翻译： 本发明提供一种具有高相对介电常数，低漏电流和优良平面度的电介质层。 根据本发明的电介质层30a由多层氧化物制成，包括由铋（Bi）和铌（Nb）组成的氧化物或由铋（Bi），锌（Zn）和铌（Bi）组成的氧化物制成的第一氧化物层31 Nb）（可能包括不可避免的杂质）和由选自由镧（La）和钽（Ta）组成的氧化物组中的一种类型（可能包括不可避免的杂质）的氧化物制成的第二氧化物层32，由镧（La） ）和锆（Zr），以及由锶（Sr）和钽（Ta）组成的氧化物。

公开(公告)号：US20190386151A1

公开(公告)日：2019-12-19

申请号：US16550161

申请日：2019-08-23

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya SHIMODA ,  Satoshi INOUE ,  Tue Trong PHAN ,  Takaaki MIYASAKO ,  Jinwang Li

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/49

摘要： A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

公开(公告)号：US20160016813A1

公开(公告)日：2016-01-21

申请号：US14773309

申请日：2014-01-06

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya SHIMODA ,  Eisuke TOKUMITSU ,  Masatoshi ONOUE ,  Takaaki MIYASAKO

IPC分类号： C01G33/00 ,  H01B1/08

CPC分类号： C01G33/006 ,  C01P2002/36 ,  C01P2004/04 ,  C01P2006/40 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1283 ,  H01B1/08 ,  H01G4/10 ,  H01G4/33 ,  H01L28/40

摘要： An oxide layer 30 according to the invention consists of bismuth (Bi) and niobium (Nb) (possibly including inevitable impurities). The oxide layer 30 also includes crystal phases of a pyrochlore crystal structure. The obtained oxide layer 30 includes oxide consisting of bismuth (Bi) and niobium (Nb) and has high permittivity that has never been achieved in the conventional technique.

摘要翻译： 根据本发明的氧化物层30由铋（Bi）和铌（Nb）（可能包括不可避免的杂质）组成。 氧化物层30还包括烧绿石晶体结构的晶相。 所获得的氧化物层30包括由铋（Bi）和铌（Nb）组成的氧化物，并且在传统技术中从未实现高电容率。

公开(公告)号：US20170133517A1

公开(公告)日：2017-05-11

申请号：US15352560

申请日：2016-11-15

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya SHIMODA ,  Satoshi INOUE ,  Tue Trong PHAN ,  Takaaki MIYASAKO ,  Jinwang Li

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities, this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

公开(公告)号：US20150093841A1

公开(公告)日：2015-04-02

申请号：US14531723

申请日：2014-11-03

申请人： Japan Science and Technology Agency

发明人： Tatsuya SHIMODA ,  Eisuke TOKUMITSU ,  Takaaki MIYASAKO ,  Toshihiko KANEDA

IPC分类号： H01L29/66 ,  H01L21/441

CPC分类号： H01L29/66969 ,  B05D5/06 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1629 ,  B41J2/1637 ,  B41J2/1639 ,  B41J2/1643 ,  B41J2/1645 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1279 ,  C23C18/1283 ,  C23C18/1295 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/38 ,  H01L21/441 ,  H01L27/1225 ,  H01L27/1292 ,  H01L29/786 ,  H01L29/7869 ,  H01L41/0973 ,  H01L41/318 ,  H01L41/33

摘要： A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.

摘要翻译： 本发明的功能元件的制造方法依次包括功能固体材料前体层的形成工序，将功能性液态材料涂布在基材上形成功能性固体材料的前体层; 所述干燥步骤将所述前体层加热至80℃至250℃的第一温度，以预先降低所述前体层的流动性; 将加热到80℃至300℃的第二温度的前体层的压印步骤，在前体层上形成压印结构; 以及在高于第二温度的第三温度下对前体层进行热处理以将前体层转变成功能性固体材料层的功能性固体材料层形成步骤。