公开(公告)号：US20190386151A1

公开(公告)日：2019-12-19

申请号：US16550161

申请日：2019-08-23

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya SHIMODA ,  Satoshi INOUE ,  Tue Trong PHAN ,  Takaaki MIYASAKO ,  Jinwang Li

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/49

摘要： A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

公开(公告)号：US20170133517A1

公开(公告)日：2017-05-11

申请号：US15352560

申请日：2016-11-15

申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY

发明人： Tatsuya SHIMODA ,  Satoshi INOUE ,  Tue Trong PHAN ,  Takaaki MIYASAKO ,  Jinwang Li

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities, this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.