知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

68 条记录 (耗时 0.035 秒)

    Titanium nitride as sensing layer for microwell structure
    1.
    发明授权
    Titanium nitride as sensing layer for microwell structure 有权
    氮化钛作为微孔结构的传感层

    公开(公告)号：US08821798B2

    公开(公告)日：2014-09-02

    申请号：US13354072

    申请日：2012-01-19

    申请人： James Bustillo ,  Todd Rearick ,  Wolfgang Hinz ,  Keith Fife

    发明人： James Bustillo ,  Todd Rearick ,  Wolfgang Hinz ,  Keith Fife

    IPC分类号： G01N27/00

    CPC分类号： B01L3/5027 ,  B01L3/502707 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0877 ,  B01L2300/0893 ,  G01N27/4145

    摘要： A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure. The method can include disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer can also be disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET can be etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process.

    摘要翻译： 本文公开了一种制造阵列结构中的微孔的方法。 阵列结构可以包括多个场效应晶体管（FET），其中每个FET具有栅极结构。 该方法可以包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛（TiN）层。 绝缘层也可以设置在阵列结构上，其中绝缘层位于TiN层之上。 此外，可以蚀刻在至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。 具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。

    TITANIUM NITRIDE AS SENSING LAYER FOR MICROWELL STRUCTURE
    2.
    发明申请
    TITANIUM NITRIDE AS SENSING LAYER FOR MICROWELL STRUCTURE 有权
    硝酸钛作为感光层用于微结构

    公开(公告)号：US20130190211A1

    公开(公告)日：2013-07-25

    申请号：US13354072

    申请日：2012-01-19

    申请人： James Bustillo ,  Todd Rearick ,  Wolfgang Hinz ,  Keith Fife

    发明人： James Bustillo ,  Todd Rearick ,  Wolfgang Hinz ,  Keith Fife

    IPC分类号： C40B40/18 ,  C40B50/14

    CPC分类号： B01L3/5027 ,  B01L3/502707 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0877 ,  B01L2300/0893 ,  G01N27/4145

    摘要： A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure. The method can include disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer can also be disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET can be etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process.

    摘要翻译： 本文公开了一种制造阵列结构中的微孔的方法。 阵列结构可以包括多个场效应晶体管（FET），其中每个FET具有栅极结构。 该方法可以包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛（TiN）层。 绝缘层也可以设置在阵列结构上，其中绝缘层位于TiN层之上。 此外，可以蚀刻在至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。 具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。

    INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS
    5.
    发明申请
    INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS 有权
    用于生物和化学分析的集成传感器阵列

    公开(公告)号：US20110263463A1

    公开(公告)日：2011-10-27

    申请号：US13125133

    申请日：2009-10-22

    申请人： Jonathan M. Rothberg ,  James Bustillo ,  Mark Milgrew ,  Jonathan Schultz ,  David Marran ,  Todd Rearick ,  Kim Johnson

    发明人： Jonathan M. Rothberg ,  James Bustillo ,  Mark Milgrew ,  Jonathan Schultz ,  David Marran ,  Todd Rearick ,  Kim Johnson

    IPC分类号： C40B60/12 ,  B82Y15/00

    CPC分类号： G01N27/4145 ,  C12Q1/6869 ,  C12Q1/6874 ,  G01N27/4148 ,  H01L21/82 ,  C12Q2565/607

    摘要： The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 μm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications.

    摘要翻译： 本发明涉及包括大规模化学场效应晶体管阵列的装置和芯片，其包括能够保留来自样品流体的化学或生物样品用于分析的样品保持区阵列。 在一个方面，这种晶体管阵列具有10μm或更小的间距，并且每个采样保持区域位于至少一个化学场效应晶体管上，该晶体管被配置为产生与化学或生物样品的特性相关的至少一个输出信号 在这样的样品保留区域中。 在一个实施方案中，所述化学或生物样品的特征是带电物质的浓度，并且其中每个所述化学场效应晶体管是离子敏感场效应晶体管，其具有在其表面上具有介电层的浮置栅极， 电介质层与所述样品流体接触并且能够与所述样品流体中的带电物质的浓度成比例地积累电荷。 在一个实施方案中，这种带电物质是氢离子，使得传感器测量样品流体在其样品保持区域中或其附近的pH值的变化。 本发明的装置和芯片可适用于大规模的基于pH的DNA测序和其他生物科学和生物医学应用。

    Integrated sensor arrays for biological and chemical analysis
    7.
    发明授权
    Integrated sensor arrays for biological and chemical analysis 有权
    用于生物和化学分析的集成传感器阵列

    公开(公告)号：US08936763B2

    公开(公告)日：2015-01-20

    申请号：US13125133

    申请日：2009-10-22

    申请人： Jonathan Rothberg ,  James Bustillo ,  Mark Milgrew ,  Jonathan Schultz ,  David Marran ,  Todd Rearick ,  Kim Johnson

    发明人： Jonathan Rothberg ,  James Bustillo ,  Mark Milgrew ,  Jonathan Schultz ,  David Marran ,  Todd Rearick ,  Kim Johnson

    IPC分类号： G01N27/403 ,  G01N27/414 ,  C12Q1/68 ,  H01L21/82

    CPC分类号： G01N27/4145 ,  C12Q1/6869 ,  C12Q1/6874 ,  G01N27/4148 ,  H01L21/82 ,  C12Q2565/607

    摘要： The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 μm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications.

    摘要翻译： 本发明涉及包括大规模化学场效应晶体管阵列的装置和芯片，其包括能够保留来自样品流体的化学或生物样品用于分析的样品保持区阵列。 在一个方面，这种晶体管阵列具有10μm或更小的间距，并且每个采样保持区域位于至少一个化学场效应晶体管上，该晶体管被配置为产生与化学或生物样品的特性相关的至少一个输出信号 在这样的样品保留区域中。 在一个实施方案中，所述化学或生物样品的特征是带电物质的浓度，并且其中每个所述化学场效应晶体管是离子敏感场效应晶体管，其具有在其表面上具有介电层的浮置栅极， 电介质层与所述样品流体接触并且能够与所述样品流体中的带电物质的浓度成比例地积累电荷。 在一个实施方案中，这种带电物质是氢离子，使得传感器测量样品流体在其样品保持区域中或其附近的pH值的变化。 本发明的装置和芯片可适用于大规模的基于pH的DNA测序和其他生物科学和生物医学应用。

    Chemically sensitive sensors with sample and hold capacitors
    10.
    发明授权
    Chemically sensitive sensors with sample and hold capacitors 有权
    具有采样和保持电容器的化学敏感传感器

    公开(公告)号：US08492800B2

    公开(公告)日：2013-07-23

    申请号：US13554585

    申请日：2012-07-20

    申请人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    发明人： Jonathan Rothberg ,  Wolfgang Hinz ,  Kim Johnson ,  James Bustillo

    IPC分类号： G01N27/403

    CPC分类号： G01N27/4148 ,  C12Q1/6818 ,  C12Q1/6874 ,  G01N27/4145 ,  G01N33/54373 ,  G01N33/5438 ,  H01L27/088 ,  H01L29/42324 ,  H01L29/78 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01073 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T436/22 ,  C12Q2565/607 ,  C12Q2565/301 ,  C12Q2533/101

    摘要： Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

    摘要翻译： 与用于分析物测量的非常大规模的FET阵列相关的方法和装置。 可以使用基于提高测量灵敏度和精度的改进的FET像素和阵列设计的传统CMOS处理技术来制造ChemFET（例如，ISFET）阵列，并且同时促进显着小的像素尺寸和致密阵列。 改进的阵列控制技术提供了从大型和密集阵列的快速数据采集。 可以使用这样的阵列来检测各种化学和/或生物过程中各种分析物类型的存在和/或浓度变化。 在一个实例中，chemFET阵列基于监测氢离子浓度（pH），其他分析物浓度变化和/或与DNA合成相关的化学过程相关联的结合事件的变化来促进DNA测序技术。