Agent for and process of treating exhaust gas
    1.
    发明授权
    Agent for and process of treating exhaust gas 失效
    处理废气的代理和处理

    公开(公告)号:US06284209B1

    公开(公告)日:2001-09-04

    申请号:US09488706

    申请日:2000-01-21

    IPC分类号: B01J800

    摘要: An agent for treating an exhaust gas, which is a mixture of a solid metal oxide and a solid metal carbonate as a main component, the metal being selected from the group of metal elements consisting of Mn, Fe, Ni, Cu and Zn. The agent is made of a molded article obtained by granulation, pelletization or extrusion of the mixture, and can be used in a process of treating an exhaust gas, capable of reducing the concentration of the exhaust gas containing a low concentration of a metal hydride gas and/or an organometallic gas to at least 0.5 ppm or lower.

    摘要翻译: 用于处理作为主要成分的固体金属氧化物和固体金属碳酸盐的混合物的废气的金属,所述金属选自由Mn,Fe,Ni,Cu和Zn组成的金属元素组。 该试剂由通过造粒,造粒或挤出混合物获得的模制品制成,并且可用于处理废气的方法,其能够降低含有低浓度金属氢化物气体的废气的浓度 和/或有机金属气体至少为0.5ppm以下。

    Method for purifying nitrogen trifluoride gas
    4.
    发明授权
    Method for purifying nitrogen trifluoride gas 失效
    纯化三氟化氮气体的方法

    公开(公告)号:US5183647A

    公开(公告)日:1993-02-02

    申请号:US689941

    申请日:1991-05-28

    摘要: NF.sub.3 gas containing N.sub.2 F.sub.2 as an impurity is purified by heating said NF.sub.3 gas at specified temperatures in a vessel the inner wall of which is coated with a strong and passive film of nickel flouride. According to this method, the rate of NF.sub.3 loss is low and the rate of removing N.sub.2 F.sub.2 is high. Therefore, when the NF.sub.3 gas thus purified is further purified with a known adsorbent, a highly pure NF.sub.3 gas can be easily and safely produced which is suitable for materials for semiconductor dry etching agents and the like.

    摘要翻译: PCT No.PCT / JP89 / 01038 Sec。 371日期1991年5月28日 102(e)日期1991年5月28日PCT提交1989年10月9日PCT公布。 公开号WO91 / 04942 日期为1991年04月18日。含有N2F2作为杂质的N 3气体通过在规定温度下加热所述NF 3气体在其内壁涂覆有强力和钝化的镍粉的膜的容器中进行纯化。 根据该方法,NF3损失率低,N2F2去除率高。 因此,当用已知的吸附剂进一步纯化如此纯化的NF 3气体时,可以容易且安全地生产适用于半导体干蚀刻剂等的材料的高纯度NF 3气体。

    Processing method for high pressure gas container and halogen containing gas filled in said container
    6.
    发明授权
    Processing method for high pressure gas container and halogen containing gas filled in said container 有权
    用于高压气体容器和装在所述容器中的含卤素气体的处理方法

    公开(公告)号:US07021487B2

    公开(公告)日:2006-04-04

    申请号:US10633552

    申请日:2003-08-05

    IPC分类号: B44C1/22 F17C1/00

    摘要: A metal container to be filled with a halogen containing gas, with the inner surface processed with a polishing agent. The gas has a reduced purity decline by the increase of the water content or impurities from the inner surface of the container which is absorbed by the gas over the passage of time. The inner surface processing method is improved such that the value of dividing the area of the Si2s peak by the area of the Fe2p3/2 peak in the X-ray photoelectron spectrum of the gas container inner surface with the inner surface process with a polishing agent applied is 0.3 or less.

    摘要翻译: 用含有卤素的气体填充的金属容器,内表面用抛光剂处理。 通过在时间上被气体吸收的容器内表面上的含水量或杂质的增加,气体的纯度降低。 内表面处理方法得到改善,使得在气体容器内表面的X射线光电子能谱中将Si2s峰面积除以Fe2p3 / 2/2峰的面积的值与 使用抛光剂的内表面处理为0.3以下。

    Process for the preparation of partially-substituted fluorosilane
    7.
    发明授权
    Process for the preparation of partially-substituted fluorosilane 失效
    制备部分取代的氟硅烷的方法

    公开(公告)号:US5346682A

    公开(公告)日:1994-09-13

    申请号:US156702

    申请日:1993-11-24

    IPC分类号: C01B33/107 C01G9/04 C01B33/08

    CPC分类号: C01B33/107 C01G9/04

    摘要: A process is provided by the present invention for the preparation of a partially-substituted fluorosilane represented by the following formula: SiH.sub.n F.sub.4-n wherein n stands for an integer of 1 to 3. The process comprises converting a corresponding partially-substituted chlorosilane represented by the following formula: SiH.sub.n Cl.sub.4-n wherein n has the same meaning as defined above into the partially-substituted fluorosilane by halogen replacement while using a fluorinating agent. The fluorinating agent is zinc fluoride having a water content not higher than 0.2 wt. %. Preferably, the size of crystallites in the direction of a (110) plane of the zinc fluoride is at least 500 .ANG..

    摘要翻译: 本发明提供了制备由下式表示的部分取代的氟硅烷的方法:SiHnF4-n,其中n表示1至3的整数。该方法包括将相应的部分取代的氟代硅烷代替 下式:SiHnCl4-n其中n具有与上述相同的含义,在使用氟化剂时通过卤素取代进行部分取代的氟硅烷。 氟化剂是水含量不高于0.2重量%的氟化锌。 %。 优选地,在氟化锌的(110)面方向上的微晶尺寸为至少500埃。

    Lightning surge protector
    10.
    发明授权
    Lightning surge protector 失效
    雷电浪涌保护器

    公开(公告)号:US5191503A

    公开(公告)日:1993-03-02

    申请号:US679188

    申请日:1991-04-02

    IPC分类号: H01C7/12 H01T1/15

    CPC分类号: H01C7/126 H01T1/15

    摘要: A lightning surge protector, comprises a current limiting element in a pressure-proof housing. The pressure-proof housing is composed of a conductive material and coupled with an upper electrode member. Also, a self arc-extinguishing LSP comprises a current limiting element and upper and lower electrode members housed and fixed in a conductive pressure-proof housing opened at its lower portion through a suspension structure composed of a suspension rod. The outside and inside of the housing are covered and filled with an insulator, so that, upon occurrence of an internal arc due to a short-circuit fault or the like, the energy due to the arc causes the lower electrode member to break the insulator in the vicinity of an opening portion of the conductive pressure-proof housing so as to electrically connect the conductive pressure-proof housing to a part of the lower electrode member.

    摘要翻译: 雷电浪涌保护器包括耐压壳体中的限流元件。 耐压外壳由导电材料构成并与上电极构件连接。 此外,自熄灭的LSP还包括限流元件和容纳并固定在通过由悬挂杆构成的悬架结构在其下部开口的导电耐压壳体中的上下电极构件。 壳体的外部和内部被覆盖并填充有绝缘体,使得由于短路故障等而发生内部电弧时,由于电弧引起的能量导致下部电极构件破坏绝缘体 在导电性耐压壳体的开口部附近,将导电性耐压外壳电连接到下部电极部件的一部分。