公开(公告)号：US5728642A

公开(公告)日：1998-03-17

申请号：US383231

申请日：1995-02-03

申请人： Makoto Aritsuka ,  Sadaichi Komohara ,  Isao Harada

发明人： Makoto Aritsuka ,  Sadaichi Komohara ,  Isao Harada

IPC分类号： B01D53/68 ,  B01D53/86 ,  B01J27/06 ,  B01J20/34 ,  B01J27/122 ,  B01J27/128

CPC分类号： B01D53/68 ,  B01D53/8659

摘要： There is provided with a method of treating an exhaust gas comprising the steps of loading into a column an exhaust gas treating agent containing as a main component a metal of which surface is fluorinated previously; passing through the column the exhaust gas containing nitrogen trifluoride as a component to be treated; and contacting the exhaust gas with the exhaust gas treating agent. And the exhaust gas treating agent is also provided.

摘要翻译： 提供了一种处理排气的方法，包括以下步骤：将含有表面被预先氟化的金属作为主要成分的废气处理剂装载到塔中; 通过该柱将含有三氟化氮作为待处理组分的废气; 并使废气与废气处理剂接触。 并且还提供废气处理剂。

公开(公告)号：US5346682A

公开(公告)日：1994-09-13

申请号：US156702

申请日：1993-11-24

申请人： Makoto Aritsuka ,  Atsuhisa Mimoto ,  Isao Harada

发明人： Makoto Aritsuka ,  Atsuhisa Mimoto ,  Isao Harada

IPC分类号： C01B33/107 ,  C01G9/04 ,  C01B33/08

CPC分类号： C01B33/107 ,  C01G9/04

摘要： A process is provided by the present invention for the preparation of a partially-substituted fluorosilane represented by the following formula: SiH.sub.n F.sub.4-n wherein n stands for an integer of 1 to 3. The process comprises converting a corresponding partially-substituted chlorosilane represented by the following formula: SiH.sub.n Cl.sub.4-n wherein n has the same meaning as defined above into the partially-substituted fluorosilane by halogen replacement while using a fluorinating agent. The fluorinating agent is zinc fluoride having a water content not higher than 0.2 wt. %. Preferably, the size of crystallites in the direction of a (110) plane of the zinc fluoride is at least 500 .ANG..

摘要翻译： 本发明提供了制备由下式表示的部分取代的氟硅烷的方法：SiHnF4-n，其中n表示1至3的整数。该方法包括将相应的部分取代的氟代硅烷代替 下式：SiHnCl4-n其中n具有与上述相同的含义，在使用氟化剂时通过卤素取代进行部分取代的氟硅烷。 氟化剂是水含量不高于0.2重量％的氟化锌。 ％。 优选地，在氟化锌的（110）面方向上的微晶尺寸为至少500埃。

公开(公告)号：US20090179357A1

公开(公告)日：2009-07-16

申请号：US11989776

申请日：2006-08-10

申请人： Masami Murakami ,  Shunsuke Oike ,  Yoshito Kurano ,  Makoto Aritsuka ,  Hiroko Wachi

发明人： Masami Murakami ,  Shunsuke Oike ,  Yoshito Kurano ,  Makoto Aritsuka ,  Hiroko Wachi

IPC分类号： B29C67/00

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/67207 ,  H01L21/67745

摘要： There are provided a method for producing porous silica and a porous silica film having low specific dielectric constant and high mechanical strength, that are preferably applicable to optical functional materials, electronic functional materials or the like, and a method for producing an interlayer insulating film, a semiconductor material and a semiconductor apparatus and a producing apparatus, which use the porous silica film. A solution containing a hydrolysis-condensation product of alkoxysilanes and a surfactant is dried to form a composite to which are then applied in the following order an ultraviolet ray irradiation treatment and a hydrophobic treatment with the use of an organic silicon compound having an alkyl group. By forming the composite by drying the solution on a substrate, the porous silica film is obtained.

摘要翻译： 提供一种多孔二氧化硅的制造方法和比较介电常数高，机械强度高的多孔二氧化硅膜，优选适用于光功能材料，电子功能材料等，以及制造层间绝缘膜的方法， 使用多孔二氧化硅膜的半导体材料和半导体装置及制造装置。 将包含烷氧基硅烷和表面活性剂的水解缩合产物的溶液干燥以形成复合材料，然后按照以下顺序施加紫外线照射处理和使用具有烷基的有机硅化合物的疏水处理。 通过在基材上干燥溶液形成复合体，得到多孔二氧化硅膜。

公开(公告)号：US4933158A

公开(公告)日：1990-06-12

申请号：US425957

申请日：1989-10-24

申请人： Makoto Aritsuka ,  Naruyuki Iwanaga

发明人： Makoto Aritsuka ,  Naruyuki Iwanaga

IPC分类号： C01B21/083

CPC分类号： C01B21/0837

摘要： There is here disclosed a method for removing nitrous oxide (N.sub.2 O), carbon dioxide (CO.sub.2) and dinitrogen difluoride (N.sub.2 F.sub.2) from a nitrogen trifluoride gas. The present invention is directed to a method for purifying a nitrogen trifluoride gas which comprises the steps of thermally treating, at a temperature of 250.degree. to 700.degree. C., a zeolite selected from the group consisting of analcime, clinoptilolite, mordenite, ferrierite, phillipsite, chabazite, erionite and laumotite; forming a packed bed of the treated zeolite; and passing the nitrogen trifluoride gas containing the gaseous impurities at a temperature of -125.degree. to 50.degree. C. through the filler layer.