公开(公告)号：US07021487B2

公开(公告)日：2006-04-04

申请号：US10633552

申请日：2003-08-05

申请人： Akio Kikkawa ,  Shigeo Kanayama ,  Isao Harada

发明人： Akio Kikkawa ,  Shigeo Kanayama ,  Isao Harada

IPC分类号： B44C1/22 ,  F17C1/00

CPC分类号： B24B31/006 ,  B24B31/0212 ,  F17C2203/0604 ,  F17C2203/0617 ,  F17C2203/0636 ,  F17C2203/0639 ,  F17C2209/2172 ,  F17C2221/05

摘要： A metal container to be filled with a halogen containing gas, with the inner surface processed with a polishing agent. The gas has a reduced purity decline by the increase of the water content or impurities from the inner surface of the container which is absorbed by the gas over the passage of time. The inner surface processing method is improved such that the value of dividing the area of the Si2s peak by the area of the Fe2p3/2 peak in the X-ray photoelectron spectrum of the gas container inner surface with the inner surface process with a polishing agent applied is 0.3 or less.

摘要翻译： 用含有卤素的气体填充的金属容器，内表面用抛光剂处理。 通过在时间上被气体吸收的容器内表面上的含水量或杂质的增加，气体的纯度降低。 内表面处理方法得到改善，使得在气体容器内表面的X射线光电子能谱中将Si2s峰面积除以Fe2p3 / 2/2峰的面积的值与 使用抛光剂的内表面处理为0.3以下。

公开(公告)号：US06284209B1

公开(公告)日：2001-09-04

申请号：US09488706

申请日：2000-01-21

申请人： Isao Harada ,  Sadaichi Komohara

发明人： Isao Harada ,  Sadaichi Komohara

IPC分类号： B01J800

CPC分类号： B01J37/0009 ,  B01D53/46 ,  B01D53/8671 ,  B01J23/06 ,  B01J23/34 ,  B01J23/70 ,  B01J23/72 ,  B01J35/10

摘要： An agent for treating an exhaust gas, which is a mixture of a solid metal oxide and a solid metal carbonate as a main component, the metal being selected from the group of metal elements consisting of Mn, Fe, Ni, Cu and Zn. The agent is made of a molded article obtained by granulation, pelletization or extrusion of the mixture, and can be used in a process of treating an exhaust gas, capable of reducing the concentration of the exhaust gas containing a low concentration of a metal hydride gas and/or an organometallic gas to at least 0.5 ppm or lower.

摘要翻译： 用于处理作为主要成分的固体金属氧化物和固体金属碳酸盐的混合物的废气的金属，所述金属选自由Mn，Fe，Ni，Cu和Zn组成的金属元素组。 该试剂由通过造粒，造粒或挤出混合物获得的模制品制成，并且可用于处理废气的方法，其能够降低含有低浓度金属氢化物气体的废气的浓度 和/或有机金属气体至少为0.5ppm以下。

公开(公告)号：US5728642A

公开(公告)日：1998-03-17

申请号：US383231

申请日：1995-02-03

申请人： Makoto Aritsuka ,  Sadaichi Komohara ,  Isao Harada

发明人： Makoto Aritsuka ,  Sadaichi Komohara ,  Isao Harada

IPC分类号： B01D53/68 ,  B01D53/86 ,  B01J27/06 ,  B01J20/34 ,  B01J27/122 ,  B01J27/128

CPC分类号： B01D53/68 ,  B01D53/8659

摘要： There is provided with a method of treating an exhaust gas comprising the steps of loading into a column an exhaust gas treating agent containing as a main component a metal of which surface is fluorinated previously; passing through the column the exhaust gas containing nitrogen trifluoride as a component to be treated; and contacting the exhaust gas with the exhaust gas treating agent. And the exhaust gas treating agent is also provided.

摘要翻译： 提供了一种处理排气的方法，包括以下步骤：将含有表面被预先氟化的金属作为主要成分的废气处理剂装载到塔中; 通过该柱将含有三氟化氮作为待处理组分的废气; 并使废气与废气处理剂接触。 并且还提供废气处理剂。

公开(公告)号：US5346682A

公开(公告)日：1994-09-13

申请号：US156702

申请日：1993-11-24

申请人： Makoto Aritsuka ,  Atsuhisa Mimoto ,  Isao Harada

发明人： Makoto Aritsuka ,  Atsuhisa Mimoto ,  Isao Harada

IPC分类号： C01B33/107 ,  C01G9/04 ,  C01B33/08

CPC分类号： C01B33/107 ,  C01G9/04

摘要： A process is provided by the present invention for the preparation of a partially-substituted fluorosilane represented by the following formula: SiH.sub.n F.sub.4-n wherein n stands for an integer of 1 to 3. The process comprises converting a corresponding partially-substituted chlorosilane represented by the following formula: SiH.sub.n Cl.sub.4-n wherein n has the same meaning as defined above into the partially-substituted fluorosilane by halogen replacement while using a fluorinating agent. The fluorinating agent is zinc fluoride having a water content not higher than 0.2 wt. %. Preferably, the size of crystallites in the direction of a (110) plane of the zinc fluoride is at least 500 .ANG..

摘要翻译： 本发明提供了制备由下式表示的部分取代的氟硅烷的方法：SiHnF4-n，其中n表示1至3的整数。该方法包括将相应的部分取代的氟代硅烷代替 下式：SiHnCl4-n其中n具有与上述相同的含义，在使用氟化剂时通过卤素取代进行部分取代的氟硅烷。 氟化剂是水含量不高于0.2重量％的氟化锌。 ％。 优选地，在氟化锌的（110）面方向上的微晶尺寸为至少500埃。

公开(公告)号：US4980144A

公开(公告)日：1990-12-25

申请号：US356179

申请日：1989-05-24

申请人： Nobuhiko Koto ,  Toshihiko Nishitsuji ,  Naruyuki Iwanaga ,  Isao Harada

发明人： Nobuhiko Koto ,  Toshihiko Nishitsuji ,  Naruyuki Iwanaga ,  Isao Harada

IPC分类号： C01B21/083

CPC分类号： C01B21/0832

摘要： This invention relates to a process for obtaining a high purity nitrogen trifluoride gas which is used as a dry etching agent for semiconductors or a cleaning gas for CVD apparatus, etc., particularly to a process for removing oxygen difluoride. This is a process for purifying a nitrogen trifluoride gas by, after removing hydrogen fluoride from a nitrogen trifluoride crude gas, contacting with at least one aqueous solution containing one selected from the group consisting of sodium thiosulfate, hydrogen iodide and sodium sulfide.

公开(公告)号：US5183647A

公开(公告)日：1993-02-02

申请号：US689941

申请日：1991-05-28

申请人： Isao Harada ,  Hisashi Hokonohara ,  Toshiaki Yamaguchi

发明人： Isao Harada ,  Hisashi Hokonohara ,  Toshiaki Yamaguchi

IPC分类号： C01B9/08 ,  C01B21/083 ,  H01L21/3065

CPC分类号： H01L21/3065 ,  C01B21/0832 ,  C01B9/08

摘要： NF.sub.3 gas containing N.sub.2 F.sub.2 as an impurity is purified by heating said NF.sub.3 gas at specified temperatures in a vessel the inner wall of which is coated with a strong and passive film of nickel flouride. According to this method, the rate of NF.sub.3 loss is low and the rate of removing N.sub.2 F.sub.2 is high. Therefore, when the NF.sub.3 gas thus purified is further purified with a known adsorbent, a highly pure NF.sub.3 gas can be easily and safely produced which is suitable for materials for semiconductor dry etching agents and the like.

摘要翻译： PCT No.PCT / JP89 / 01038 Sec。 371日期1991年5月28日 102（e）日期1991年5月28日PCT提交1989年10月9日PCT公布。 公开号WO91 / 04942 日期为1991年04月18日。含有N2F2作为杂质的N 3气体通过在规定温度下加热所述NF 3气体在其内壁涂覆有强力和钝化的镍粉的膜的容器中进行纯化。 根据该方法，NF3损失率低，N2F2去除率高。 因此，当用已知的吸附剂进一步纯化如此纯化的NF 3气体时，可以容易且安全地生产适用于半导体干蚀刻剂等的材料的高纯度NF 3气体。

公开(公告)号：US4960581A

公开(公告)日：1990-10-02

申请号：US322415

申请日：1989-03-13

申请人： Isao Harada ,  Yukihiro Yoda ,  Naruyuki Iwanaga ,  Toshihiko Nishitsuji ,  Akio Kikkawa

发明人： Isao Harada ,  Yukihiro Yoda ,  Naruyuki Iwanaga ,  Toshihiko Nishitsuji ,  Akio Kikkawa

IPC分类号： C01B9/08 ,  C01B17/45 ,  C01B25/10 ,  C01B33/107 ,  C01B35/06 ,  C01G41/00

CPC分类号： C01B17/453 ,  C01B25/10 ,  C01B33/10705 ,  C01B35/061 ,  C01B9/08 ,  C01G41/00

摘要： The method for preparing a gaseous metallic floride is here disclosed which comprises reacting a metal or its oxide with a fluorine gas or nitrogen trifluoride gas, the aforesaid method being characterized by comprising the steps of mixing the metal or its oxide with a molding auxiliary comprising a solid metallic fluoride which does not react with fluorine and nitrogen trifluoride; molding the resulting mixture under pressure; and contacting the molded pieces with the fluorine gas or nitrogen trifluoride gas, while the molded pieces are heated.

公开(公告)号：US20060018818A1

公开(公告)日：2006-01-26

申请号：US11174723

申请日：2005-07-06

申请人： Masato Yamazaki ,  Kenshi Mitsuishi ,  Isao Harada ,  Masao Tanaka ,  Kohichi Haruta ,  Koji Watari ,  Jin-yu Qiu ,  Yuji Hotta ,  Kimiyasu Sato

发明人： Masato Yamazaki ,  Kenshi Mitsuishi ,  Isao Harada ,  Masao Tanaka ,  Kohichi Haruta ,  Koji Watari ,  Jin-yu Qiu ,  Yuji Hotta ,  Kimiyasu Sato

IPC分类号： C04B35/581 ,  C01B21/072

CPC分类号： C04B35/6261 ,  B82Y30/00 ,  C01B21/072 ,  C01B21/0728 ,  C01P2004/50 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/80 ,  C04B35/62625 ,  C04B35/6265 ,  C04B35/6303 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3895 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/77 ,  C04B2235/9607

摘要： The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in which the density and thermal conductivity are high and which can be properly used as a substrate material. Using a vapor phase reaction apparatus shown in FIG. 1, ammonia gas was fed from a reactor 2 heated at from 300 to 500° C. and maintained at that temperature by a heating section 1 via a feeding tube 4 while being regulated by a flow regulator 3. At the same time, while being regulated by the flow regulator 5, nitrogen gas containing an organic aluminum compound is fed via a feeding tube 6 to obtain an aluminum nitride powder. The aluminum nitride powder is subjected to a heat treatment at from 1100 to 1500° C. in a reducing gas atmosphere and/or an inert gas atmosphere to obtain an aggregate aluminum nitride powder. The aggregate aluminum nitride powder is subjected to a mechanical treatment to obtain an aluminum nitride powder in which the specific surface area value is not less than 30 m2/g and a ratio of an average particle diameter to a particle diameter in terms of the specific surface area is not more than 10.

摘要翻译： 本发明是在不高于1600℃的温度下制造烧结体的氮化铝粉末，得到密度和导热系数高，可适当使用的烧结氮化铝 作为基材。 使用图1所示的气相反应装置， 如图1所示，从加热到300〜500℃的反应器2供给氨气，同时由流量调节器3调节由加热部1通过加热部1维持在该温度。同时， 通过流量调节器5调节，含有有机铝化合物的氮气通过进料管6进料，得到氮化铝粉末。 在还原气体气氛和/或惰性气体气氛中，将氮化铝粉末在1100〜1500℃下进行热处理，得到集合的氮化铝粉末。 对该聚合氮化铝粉末进行机械处理，得到比表面积值为30m 2 / g以上的氮化铝粉末，平均粒径与 粒径以比表面积计不超过10。

公开(公告)号：US07267808B2

公开(公告)日：2007-09-11

申请号：US11174723

申请日：2005-07-06

申请人： Masato Yamazaki ,  Kenshi Mitsuishi ,  Isao Harada ,  Masao Tanaka ,  Kohichi Haruta ,  Koji Watari ,  Jin-yu Qiu ,  Yuji Hotta ,  Kimiyasu Sato

发明人： Masato Yamazaki ,  Kenshi Mitsuishi ,  Isao Harada ,  Masao Tanaka ,  Kohichi Haruta ,  Koji Watari ,  Jin-yu Qiu ,  Yuji Hotta ,  Kimiyasu Sato

IPC分类号： C01B21/072 ,  C04B35/581

CPC分类号： C04B35/6261 ,  B82Y30/00 ,  C01B21/072 ,  C01B21/0728 ,  C01P2004/50 ,  C01P2004/64 ,  C01P2006/12 ,  C01P2006/80 ,  C04B35/62625 ,  C04B35/6265 ,  C04B35/6303 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3895 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/77 ,  C04B2235/9607

摘要： The present invention is to produce an aluminum nitride powder which is turned into a sintered body at a temperature of not more than 1600° C., thereby obtaining a sintered aluminum nitride in which the density and thermal conductivity are high and which can be properly used as a substrate material.Using a vapor phase reaction apparatus shown in FIG. 1, ammonia gas was fed from a reactor 2 heated at from 300 to 500° C. and maintained at that temperature by a heating section 1 via a feeding tube 4 while being regulated by a flow regulator 3. At the same time, while being regulated by the flow regulator 5, nitrogen gas containing an organic aluminum compound is fed via a feeding tube 6 to obtain an aluminum nitride powder. The aluminum nitride powder is subjected to a heat treatment at from 1100 to 1500° C. in a reducing gas atmosphere and/or an inert gas atmosphere to obtain an aggregate aluminum nitride powder. The aggregate aluminum nitride powder is subjected to a mechanical treatment to obtain an aluminum nitride powder in which the specific surface area value is not less than 30 m2/g and a ratio of an average particle diameter to a particle diameter in terms of the specific surface area is not more than 10.

摘要翻译： 本发明是在不高于1600℃的温度下制造烧结体的氮化铝粉末，得到密度和导热系数高，可适当使用的烧结氮化铝 作为基材。 使用图1所示的气相反应装置， 如图1所示，从加热到300℃〜500℃的反应器2供给氨气，并在加热部1通过供给管4保持在该温度的同时由流量调节器3调节。 同时，在被流量调节器5调节的同时，通过供给管6供给含有有机铝化合物的氮气，得到氮化铝粉末。 在还原气体气氛和/或惰性气体气氛中，将氮化铝粉末在1100〜1500℃下进行热处理，得到集合的氮化铝粉末。 对该聚合氮化铝粉末进行机械处理，得到比表面积值为30m 2 / g以上的氮化铝粉末，平均粒径与 粒径以比表面积计不超过10。

公开(公告)号：US5191503A

公开(公告)日：1993-03-02

申请号：US679188

申请日：1991-04-02

申请人： Takeshi Kawamura ,  Isao Harada ,  Tomohisa Matsushita

发明人： Takeshi Kawamura ,  Isao Harada ,  Tomohisa Matsushita

IPC分类号： H01C7/12 ,  H01T1/15

CPC分类号： H01C7/126 ,  H01T1/15

摘要： A lightning surge protector, comprises a current limiting element in a pressure-proof housing. The pressure-proof housing is composed of a conductive material and coupled with an upper electrode member. Also, a self arc-extinguishing LSP comprises a current limiting element and upper and lower electrode members housed and fixed in a conductive pressure-proof housing opened at its lower portion through a suspension structure composed of a suspension rod. The outside and inside of the housing are covered and filled with an insulator, so that, upon occurrence of an internal arc due to a short-circuit fault or the like, the energy due to the arc causes the lower electrode member to break the insulator in the vicinity of an opening portion of the conductive pressure-proof housing so as to electrically connect the conductive pressure-proof housing to a part of the lower electrode member.

摘要翻译： 雷电浪涌保护器包括耐压壳体中的限流元件。 耐压外壳由导电材料构成并与上电极构件连接。 此外，自熄灭的LSP还包括限流元件和容纳并固定在通过由悬挂杆构成的悬架结构在其下部开口的导电耐压壳体中的上下电极构件。 壳体的外部和内部被覆盖并填充有绝缘体，使得由于短路故障等而发生内部电弧时，由于电弧引起的能量导致下部电极构件破坏绝缘体 在导电性耐压壳体的开口部附近，将导电性耐压外壳电连接到下部电极部件的一部分。