公开(公告)号：US20030168695A1

公开(公告)日：2003-09-11

申请号：US10384897

申请日：2003-03-07

Applicant: International Rectifier Corp.

Inventor： Ritu Sodhi ,  Hamilton Lu ,  Milton J. Boden

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01L29/7813 ,  H01L29/4933

Abstract: The tops of the conductive polysilicon gates of a trench device have a layer of a silicide such as titanium silicide which is more conductive than the polysilicon gate, thereby reducing gate resistance.

Abstract translation: 沟槽器件的导电多晶硅栅极的顶部具有比多晶硅栅极更导电的诸如硅化钛的硅化物层，从而降低栅极电阻。