公开(公告)号：US20030062585A1

公开(公告)日：2003-04-03

申请号：US10254112

申请日：2002-09-25

Applicant: International Rectifier Corp.

Inventor： Kohji Andoh ,  Davide Chiola ,  Daniel M. Kinzer

IPC: H01L027/095

CPC classification number: H01L27/0814 ,  H01L29/66143 ,  H01L29/8725

Abstract: A Schottky diode has a barrier height which is adjusted by boron implant through a titanium silicide Schottky contact and into the underlying Nnull silicon substrate which receives the titanium silicide contact. The implant is a low energy, of about 10 keV (non critical) and a low dose of less than about 1E12 atoms per cm2 (non-critical).

Abstract translation: 肖特基二极管具有通过硼注入通过硅化钛肖特基接触并进入接收硅化钛接触的下面的N-硅衬底中的势垒高度。 植入物是约10keV（非临界）和小于约1E12原子/ cm 2（非关键）的低能量的低能量。

公开(公告)号：US20040007723A1

公开(公告)日：2004-01-15

申请号：US10193783

申请日：2002-07-11

Applicant: International Rectifier Corp.

Inventor： Kohji Andoh ,  Davide Chiola

IPC: H01L029/80 ,  H01L027/095 ,  H01L029/47

CPC classification number: H01L29/407 ,  H01L27/0814 ,  H01L29/66143 ,  H01L29/8725 ,  Y10S438/963

Abstract: A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (nullepinull) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.

Abstract translation: 用于肖特基势垒结构的制造方法包括在外延（“epi”）层的表面上直接形成氮化物层，随后在外延层中形成多个沟槽。 然后将沟槽的内壁沉积有最终的氧化物层，而不形成牺牲氧化物层，以避免在内部沟槽壁的顶部形成喙鸟。 在用于在有源区域中形成多个沟槽的相同工艺步骤中蚀刻端接沟槽。

公开(公告)号：US20020195613A1

公开(公告)日：2002-12-26

申请号：US10115757

申请日：2002-04-02

Applicant: International Rectifier Corp.

Inventor： Kohji Andoh ,  Silvestro Fimiani ,  Fabrizio Rue Redda ,  Davide Chiola

IPC: H01L029/74 ,  H01L031/111

CPC classification number: H01L29/402 ,  H01L29/32 ,  H01L29/66136 ,  H01L29/8611

Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.

Abstract translation: 快速恢复二极管具有由终端区域包围的单个大面积P / N结。 与中心有源区接触的阳极触点在氧化物终止环的内周边延伸，并且EQR金属环在氧化物终止环的外周延伸。 铂原子扩散到器件的后表面。 描述三个掩模过程。 在四掩模工艺中添加非晶硅层，并且在五个掩模工艺中添加多个间隔保护环。