公开(公告)号：US20020195613A1

公开(公告)日：2002-12-26

申请号：US10115757

申请日：2002-04-02

Applicant: International Rectifier Corp.

Inventor： Kohji Andoh ,  Silvestro Fimiani ,  Fabrizio Rue Redda ,  Davide Chiola

IPC: H01L029/74 ,  H01L031/111

CPC classification number: H01L29/402 ,  H01L29/32 ,  H01L29/66136 ,  H01L29/8611

Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.

Abstract translation: 快速恢复二极管具有由终端区域包围的单个大面积P / N结。 与中心有源区接触的阳极触点在氧化物终止环的内周边延伸，并且EQR金属环在氧化物终止环的外周延伸。 铂原子扩散到器件的后表面。 描述三个掩模过程。 在四掩模工艺中添加非晶硅层，并且在五个掩模工艺中添加多个间隔保护环。