公开(公告)号：US12229652B2

公开(公告)日：2025-02-18

申请号：US17208370

申请日：2021-03-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Kevin W. Brew ,  Talia S. Gershon ,  Seyoung Kim ,  Jerry D. Tersoff

IPC: G11C13/00 ,  G06N3/04 ,  G06N3/065 ,  G06N3/084 ,  G11C11/54 ,  H10N70/00 ,  H10N70/20

Abstract: Methods for setting a resistance include applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device. The memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material.

公开(公告)号：US10978604B2

公开(公告)日：2021-04-13

申请号：US15592669

申请日：2017-05-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Talia S. Gershon ,  Marinus J. P. Hopstaken ,  Jeehwan Kim ,  Yun Seog Lee

IPC: H01L31/065 ,  H01L31/032 ,  H01L31/0368 ,  H01L31/18 ,  H01L31/0224

Abstract: A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) over a substrate. The absorber layer is rapid thermal annealed in a sealed chamber having elemental sulfur within the chamber. A sulfur content profile is graded in the absorber layer in accordance with a size of the elemental sulfur and an anneal temperature to provide a graduated bandgap profile for the absorber layer. Additional layers are formed on the absorber layer to complete the photovoltaic device.

公开(公告)号：US10772808B2

公开(公告)日：2020-09-15

申请号：US15082639

申请日：2016-03-28

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Ning Li ,  Devendra Sadana ,  Teodor K. Todorov

IPC: A61K8/27 ,  A61Q17/04 ,  A61K8/26 ,  A61K8/29 ,  A61K8/19 ,  A61K8/84 ,  C09C3/10 ,  A61K8/81 ,  A61K8/21 ,  A61K8/25 ,  A61K8/72 ,  C09C1/04

Abstract: Zinc oxide compositions and methods for applying anti-reflective coating on oxide particles for sunscreen applications are provided herein. A method includes selecting one or more coating materials to be applied to zinc oxide particles in a sunscreen composition, wherein said selecting is based on optical properties of the coating materials, wherein the optical properties comprises at least the refractive index of each of the coating materials, and applying the selected coating materials to the zinc oxide particles to create the sunscreen composition. A composition includes multiple zinc oxide particles suspended within a medium forming sunscreen composition, and one or more coating materials applied to each of the zinc oxide particles, wherein each of the coating materials has a refractive index that is between the refractive index of air and the refractive index of zinc oxide, and wherein at least one of the coating materials incorporates a textured surface.

公开(公告)号：US10660834B2

公开(公告)日：2020-05-26

申请号：US15814849

申请日：2017-11-16

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Yun Seog Lee ,  Ning Li ,  Devendra Sadana ,  Teodor K. Todorov

IPC: A61K8/27 ,  A61Q17/04 ,  A61K8/23 ,  A61K8/19 ,  A61K8/02

Abstract: Shell-structured particles for sunscreen applications are provided herein. A composition includes one or more zinc oxide particles constituting a core material in a sunscreen composition, one or more particles coating the one or more zinc oxide particles, wherein each of the one or more particles comprises a band gap within a predetermined range, and wherein said one or more particles are selected based on a desired absorption spectrum of the sunscreen composition, and an anti-reflective coating applied to the surface of the one or more particles coating the one or more zinc oxide particles.

公开(公告)号：US10658030B2

公开(公告)日：2020-05-19

申请号：US15826654

申请日：2017-11-29

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Talia S. Gershon ,  Pouya Hashemi ,  Bahman Hekmatshoartabari

IPC: H01L45/00 ,  G11C11/54 ,  H01L23/528 ,  G11C13/00 ,  H01L23/532 ,  H01L23/522 ,  H01L27/24 ,  G11C17/16

Abstract: A method of forming an Integrated Circuit (IC) chip, the IC chip and an on-chip synaptic crossbar memory array. Chip devices are formed on a surface of a semiconductor wafer. A connective layer is formed above the chip devices. A bottom electrode layer is formed on the connective layer. A neuromorphic synapse layer is formed above the bottom electrode layer with each synapse on a bottom electrode. Upper electrodes are formed above the synapses and orthogonal to bottom electrode lines. Each synapse being beneath an upper electrode where the upper electrode crosses a bottom electrode. Upper electrodes are refractory metal and the bottom electrodes are copper, or vice versa.

公开(公告)号：US10541130B2

公开(公告)日：2020-01-21

申请号：US15997939

申请日：2018-06-05

Applicant: International Business Machines Corporation

Inventor： Yun Seog Lee ,  Talia S. Gershon ,  Joel P. De Souza ,  Devendra K. Sadana

IPC: H01L21/02 ,  H01L29/20

Abstract: A semiconductor structure, a method, and an apparatus for in-situ sulfur vapor passivation of an interface surface of an indium gallium arsenide layer of the semiconductor structure. A method includes elemental sulfur-vapor passivation of an interface surface of an indium gallium arsenide layer disposed on a substrate. A dielectric layer can be deposited on the sulfur-vapor passivated interface surface. An annealing process can be performed after the deposition of the dielectric layer. The annealing process anneals the indium gallium arsenide layer including the sulfur-vapor passivated interface surface and the dielectric layer disposed on the sulfur-vapor passivated interface surface. The sulfur-vapor passivation, the deposition of the dielectric layer, and the anneal, can be performed in-situ in a vacuum chamber without breaking a vacuum of the vacuum chamber following a III-V material growth process in the vacuum chamber to form the indium gallium arsenide layer.

公开(公告)号：US20190237667A1

公开(公告)日：2019-08-01

申请号：US16378268

申请日：2019-04-08

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Supratik Guha ,  Oki Gunawan ,  Teodor K. Todorov

IPC: H01L51/00 ,  H01L31/18 ,  H01L31/04 ,  G01J3/46

CPC classification number: H01L51/001 ,  G01J3/463 ,  H01L31/04 ,  H01L31/18 ,  H01L51/0031 ,  Y02E10/549

Abstract: Vacuum annealing-based techniques for forming perovskite materials are provided. In one aspect, a method of forming a perovskite material is provided. The method includes the steps of: depositing a metal halide layer on a sample substrate; and vacuum annealing the metal halide layer and methylammonium halide under conditions sufficient to form methylammonium halide vapor which reacts with the metal halide layer and forms the perovskite material on the sample substrate. A perovskite-based photovoltaic device and method of formation thereof are also provided.

公开(公告)号：US10319871B2

公开(公告)日：2019-06-11

申请号：US16028249

申请日：2018-07-05

Applicant: International Business Machines Corporation

Inventor： Talia S. Gershon ,  Supratik Guha ,  Oki Gunawan ,  Richard A. Haight ,  Yun Seog Lee

IPC: H01L31/072 ,  H01L31/032 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/07

Abstract: Photovoltaic devices based on an Ag2ZnSn(S,Se)4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for forming a photovoltaic device includes the steps of: coating a substrate with a conductive layer; contacting the substrate with an Ag source, a Zn source, a Sn source, and at least one of a S source and a Se source under conditions sufficient to form an absorber layer on the conductive layer having Ag, Zn, Sn, and at least one of S and Se; and annealing the absorber layer. Methods of doping the AZTSSe are provided. A photovoltaic device is also provided.

公开(公告)号：US20190049403A1

公开(公告)日：2019-02-14

申请号：US15674265

申请日：2017-08-10

Applicant: International Business Machines Corporation

Inventor： Josephine B. Chang ,  Talia S. Gershon ,  Supratik Guha ,  Hendrik F. Hamann ,  Jiaxing Liu ,  Theodore G. van Kessel

IPC: G01N27/407 ,  G01N27/416

Abstract: Low power combustible gas sensors using a thermocouple design are provided. In one aspect, a combustible gas sensor includes: at least one first electrode; at least one second electrode formed from a dissimilar material from the first electrode; and a catalytic material at an active reaction junction between the first electrode and the second electrode, wherein the active reaction junction between the first electrode and the second electrode forms a thermocouple. A sensing device is including, e.g., multiple sensors, and a method for sensing combustible gas using the present sensors are also provided.

公开(公告)号：US10186657B2

公开(公告)日：2019-01-22

申请号：US15832300

申请日：2017-12-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Kevin W. Brew ,  Talia S. Gershon ,  Seyoung Kim ,  Dennis M. Newns ,  Teodor K. Todorov

IPC: G11C13/00 ,  H01L45/00

Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.