公开(公告)号：US10784274B1

公开(公告)日：2020-09-22

申请号：US16441500

申请日：2019-06-14

申请人： Intel Corporation

发明人： Rahul Agarwal ,  Srivardhan Gowda ,  Krishna Parat

IPC分类号： H01L27/1157 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/532 ,  H01L27/11582

摘要： An integrated circuit memory cell includes a floating gate, a control gate, and a plurality of inter-poly dielectric (IPD) layers. The IPD layers include an IPD1 layer, an IPD2 layer, and an IPD3 layer, with the IPD2 layer interposed between the IPD1 and IPD3 layers. The IPD2 layer, which may be a nitride, does not flank the floating gate. Thus, no section of the floating gate is laterally between two sections of the IPD2 layer. Also, no section of the IPD2 layer of a first memory cell is between the floating gate of the first memory cell and a floating gate of an immediate adjacent memory cell of the same memory cell string. In some cases, an IPD4 layer is provided between the floating gate and the IPD3 layer. The IPD4 layer is relatively much thinner than layers IPD1-3 and may flank the floating gate, as may the IPD3 layer.

公开(公告)号：US10762939B2

公开(公告)日：2020-09-01

申请号：US15640530

申请日：2017-07-01

申请人： Intel Corporation

发明人： Christopher J. Larsen ,  David A. Daycock ,  Qian Tao ,  Saniya Rathod ,  Devesh K. Datta ,  Srivardhan Gowda ,  Rithu K. Bhonsle

IPC分类号： G11C11/34 ,  G11C8/12 ,  G06F3/06 ,  G06F12/02 ,  G11C16/06 ,  G11C19/28 ,  H01L27/11582 ,  G11C5/02 ,  G11C16/04

摘要： Computer memory technology is disclosed. In one example, a method for isolating computer memory blocks in a memory array from one another can include forming an opening between adjacent blocks of memory structures. The method can also include forming a protective liner layer on at least the memory structures. The method can further include disposing isolating material in the opening and on the protective liner layer. The method can even further include removing the isolating material on the protective liner layer. The method can additionally include removing the protective liner layer on the memory structures. Associated devices and systems are also disclosed.

公开(公告)号：US20190005996A1

公开(公告)日：2019-01-03

申请号：US15640530

申请日：2017-07-01

申请人： Intel Corporation

发明人： Christopher J. Larsen ,  David A. Daycock ,  Qian Tao ,  Saniya Rathod ,  Devesh K. Datta ,  Srivardhan Gowda ,  Rithu K. Bhonsle

IPC分类号： G11C8/12 ,  G11C5/02 ,  G06F3/06 ,  G06F12/02 ,  G11C16/06 ,  G11C19/28

摘要： Computer memory technology is disclosed. In one example, a method for isolating computer memory blocks in a memory array from one another can include forming an opening between adjacent blocks of memory structures. The method can also include forming a protective liner layer on at least the memory structures. The method can further include disposing isolating material in the opening and on the protective liner layer. The method can even further include removing the isolating material on the protective liner layer. The method can additionally include removing the protective liner layer on the memory structures. Associated devices and systems are also disclosed.