公开(公告)号：US20220122881A1

公开(公告)日：2022-04-21

申请号：US17567762

申请日：2022-01-03

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20240282624A1

公开(公告)日：2024-08-22

申请号：US18649389

申请日：2024-04-29

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/00 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20200105588A1

公开(公告)日：2020-04-02

申请号：US16702233

申请日：2019-12-03

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20170372947A1

公开(公告)日：2017-12-28

申请号：US15686047

申请日：2017-08-24

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522 ,  H01L23/00

CPC分类号： H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20230260833A1

公开(公告)日：2023-08-17

申请号：US18137334

申请日：2023-04-20

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

CPC分类号： H01L21/76831 ,  H01L23/5222 ,  H01L23/53295 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L23/522 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/564 ,  H01L2924/0002

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20220344201A1

公开(公告)日：2022-10-27

申请号：US17855656

申请日：2022-06-30

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20190371658A1

公开(公告)日：2019-12-05

申请号：US16538666

申请日：2019-08-12

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20180218940A1

公开(公告)日：2018-08-02

申请号：US15926870

申请日：2018-03-20

申请人： Intel Corporation

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/00 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20160247715A1

公开(公告)日：2016-08-25

申请号：US15141522

申请日：2016-04-28

申请人： INTEL CORPORATION

发明人： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/00 ,  H01L23/522

CPC分类号： H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.