公开(公告)号：US20200286686A1

公开(公告)日：2020-09-10

申请号：US16296082

申请日：2019-03-07

申请人： Intel Corporation

发明人： Chia-Ching Lin ,  Sou-Chi Chang ,  Ashish Verma Penumatcha ,  Nazila Haratipour ,  Seung Hoon Sung ,  Owen Y. Loh ,  Jack Kavalieros ,  Uygar E. Avci ,  Ian A. Young

IPC分类号： H01G7/06 ,  H01L49/02 ,  H01L27/108

摘要： Described is a ferroelectric-based capacitor that improves reliability of a ferroelectric memory by using low-leakage insulating thin film. In one example, the low-leakage insulating thin film is positioned between a bottom electrode and a ferroelectric oxide. In another example, the low-leakage insulating thin film is positioned between a top electrode and ferroelectric oxide. In yet another example, the low-leakage insulating thin film is positioned in the middle of ferroelectric oxide to reduce the leakage current and improve reliability of the ferroelectric oxide.

公开(公告)号：US20200286685A1

公开(公告)日：2020-09-10

申请号：US16294811

申请日：2019-03-06

申请人： Intel Corporation

发明人： Chia-Ching Lin ,  Sou-Chi Chang ,  Ashish Verma Penumatcha ,  Nazila Haratipour ,  Seung Hoon Sung ,  Owen Y. Loh ,  Jack Kavalieros ,  Uygar E. Avci ,  Ian A. Young

IPC分类号： H01G7/06 ,  H01L49/02 ,  H01L27/108

摘要： Described is a ferroelectric based capacitor that reduces non-polar monoclinic phase and increases polar orthorhombic phase by epitaxial strain engineering in the oxide thin film and/or electrodes. As such, both memory window and reliability are improved. The capacitor comprises: a first structure comprising metal, wherein the first structure has a first lattice constant; a second structure comprising metal, wherein the second structure has a second lattice constant; and a third structure comprising ferroelectric material (e.g., oxide of Hf or Zr), wherein the third structure is between and adjacent to the first and second structures, wherein the third structure has a third lattice constant, and wherein the first and second lattice constants are smaller than the third lattice constant.

公开(公告)号：US10978568B2

公开(公告)日：2021-04-13

申请号：US15754874

申请日：2015-09-25

申请人： INTEL CORPORATION

发明人： Glenn A. Glass ,  Mark R. Brazier ,  Anand S. Murthy ,  Tahir Ghani ,  Owen Y. Loh

IPC分类号： H01L29/51 ,  H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/786 ,  H01L27/092 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L21/8258

摘要： Techniques are disclosed for passivation of transistor channel region interfaces. In some cases, the transistor channel region interfaces to be passivated include the interface between the semiconductor channel and the gate dielectric and/or the interface between the sub-channel semiconductor material and isolation material. For example, an aluminum oxide (also referred to as alumina) layer may be used to passivate channel/gate interfaces where the channel material includes silicon germanium, germanium, or a III-V material. The techniques can be used to reduce the interface trap density at the channel/gate interface and the techniques can also be used to passivate the channel/gate interface in both gate first and gate last process flows. The techniques may also include an additional passivation layer at the sub-channel/isolation interface to, for example, avoid incurring additional parasitic capacitance penalty.