公开(公告)号：US20180144879A1

公开(公告)日：2018-05-24

申请号：US15355608

申请日：2016-11-18

Applicant: Innovative Micro Technology

Inventor： Suresh Sampath ,  Christopher S. GUDEMAN

IPC: H01H1/00 ,  B81B3/00 ,  B81C1/00 ,  H01H11/04 ,  H01H1/023

CPC classification number: H01H1/0036 ,  B81B2201/018 ,  B81C1/00095 ,  B81C1/00166 ,  H01H2001/0052 ,  H01H2001/0057

Abstract: The present application discloses a method for forming electrical contacts on a semiconductor substrate. The method includes forming a first metal layer over the substrate, and forming a layer of a second metal oxide by sputter deposition of a second metal in an oxygen environment.

公开(公告)号：US10388468B2

公开(公告)日：2019-08-20

申请号：US15355608

申请日：2016-11-18

Applicant: Innovative Micro Technology

Inventor： Suresh Sampath ,  Christopher S. Gudeman

IPC: H01H1/00 ,  B81C1/00

Abstract: A method for forming electrical contacts on a semiconductor substrate is disclosed. The method includes forming a first metal layer over the substrate, and forming a layer of a second metal oxide by sputter deposition of a second metal in an oxygen environment. In some embodiments, the second metal oxide may be ruthenium dioxide, and the first metal layer may be gold, copper, platinum, silver or aluminum.