公开(公告)号：US10707152B2

公开(公告)日：2020-07-07

申请号：US15844907

申请日：2017-12-18

申请人： InnoLux Corporation

发明人： Ming-Yen Weng ,  Ker-Yih Kao ,  Chia-Chi Ho ,  Tsutomu Shinozaki ,  Cheng-Chi Wang ,  I-Yin Li

IPC分类号： H01L23/66 ,  H01L21/48 ,  H01L23/485 ,  H01L21/311 ,  H01L25/065 ,  H01Q1/38

摘要： A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.

公开(公告)号：US11062979B2

公开(公告)日：2021-07-13

申请号：US16891916

申请日：2020-06-03

申请人： InnoLux Corporation

发明人： Ming-Yen Weng ,  Ker-Yih Kao ,  Chia-Chi Ho ,  Tsutomu Shinozaki ,  Cheng-Chi Wang ,  I-Yin Li

IPC分类号： H01L23/66 ,  H01L23/48 ,  H01Q1/38 ,  H01L23/485 ,  H01L21/311 ,  H01L25/065 ,  H01L21/48

摘要： A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.