公开(公告)号：US11317514B2

公开(公告)日：2022-04-26

申请号：US16484479

申请日：2018-02-09

Applicant: InkTec Co., Ltd.

Inventor： Kwang-Choon Chung ,  Byung Woong Moon ,  Su Han Kim ,  Jung Yoon Moon ,  Hyeon-Jun Seong ,  Jae Rin Kim

IPC: H05K3/06 ,  C09K13/00 ,  H05K1/09 ,  H05K1/11 ,  H05K3/18 ,  H05K3/28 ,  H05K3/42

Abstract: The present invention relates to a method for forming a circuit using a seed layer. The method for forming a circuit using a seed layer according to the present invention, may realize a fine pitch, increase the adhesion of the circuit, and prevent the migration phenomenon.

公开(公告)号：US11453823B2

公开(公告)日：2022-09-27

申请号：US16487104

申请日：2018-02-20

Applicant: InkTec Co., Ltd.

Inventor： Kwang-Choon Chung ,  Byung Woong Moon ,  Su Han Kim ,  Jae Rin Kim

IPC: C09K13/00 ,  C23F1/00 ,  C25D3/38 ,  C25D5/02 ,  H05K1/09 ,  H05K3/06 ,  H05K3/42 ,  H05K3/46 ,  C25D5/10

Abstract: The disclosure relates to a method for manufacturing a transfer film including an electrode layer, the method comprising: an electrode layer formation step of forming an electrode layer on a carrier member by using a conductive material; a placement step of placing the carrier member on at least one side of an insulating resin layer respectively; a bonding step of bonding the carrier member and the insulating resin layer together by applying pressure thereto; and a transfer step of removing the carrier member to transfer the electrode layer on the insulating resin layer.