公开(公告)号：US11317514B2

公开(公告)日：2022-04-26

申请号：US16484479

申请日：2018-02-09

Applicant: InkTec Co., Ltd.

Inventor： Kwang-Choon Chung ,  Byung Woong Moon ,  Su Han Kim ,  Jung Yoon Moon ,  Hyeon-Jun Seong ,  Jae Rin Kim

IPC: H05K3/06 ,  C09K13/00 ,  H05K1/09 ,  H05K1/11 ,  H05K3/18 ,  H05K3/28 ,  H05K3/42

Abstract: The present invention relates to a method for forming a circuit using a seed layer. The method for forming a circuit using a seed layer according to the present invention, may realize a fine pitch, increase the adhesion of the circuit, and prevent the migration phenomenon.

公开(公告)号：US11160171B2

公开(公告)日：2021-10-26

申请号：US16485174

申请日：2018-02-14

Applicant: InkTec Co., Ltd.

Inventor： Kwang-Choon Chung ,  Su Han Kim ,  Jung Yoon Moon ,  Hyeon-Jun Seong ,  Byung Woong Moon

IPC: H05K3/06 ,  C09K13/06 ,  C23F1/30

Abstract: The present invention relates to an etching solution composition for selectively etching only silver, a silver alloy, or a silver compound, and to a circuit forming method using the composition. The circuit forming method according to the present invention is characterized in that, in a substrate material in which an electrically conductive seed layer and a circuit layer are formed of heterogeneous metals, only the seed layer is selectively etched to enable the implementation of fine pitches. In addition, the present invention relates to a circuit forming method and an etching solution composition, wherein only a seed layer of silver (Ag), a silver alloy, or a silver compound is selectively etched without etching a copper (Cu) plated circuit.