公开(公告)号：US12080625B2

公开(公告)日：2024-09-03

申请号：US18235668

申请日：2023-08-18

Applicant: Infineon Technologies Austria AG

Inventor： Li Fong Chong ,  Yee Beng Daryl Yeow ,  Chii Shang Hong ,  Azlina Kassim ,  Hui Kin Lit

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/433

CPC classification number: H01L23/4334 ,  H01L21/561 ,  H01L21/565 ,  H01L23/315 ,  H01L23/49503 ,  H01L23/562 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48245

Abstract: A semiconductor device includes a semiconductor package, including a package body that includes an encapsulant portion and an isolation structure, a semiconductor die embedded within the package body, and a plurality of leads that protrude out from the encapsulant body, wherein the encapsulant portion and the isolation structure are each electrically insulating structures, wherein the isolation structure has a greater thermal conductivity than the encapsulant portion, and wherein the isolation structure is thermally coupled to the semiconductor die, and a releasable layer affixed to the semiconductor package, wherein a first outer face of the package body includes a first surface of the isolation structure, wherein the releasable layer at least partially covers the first surface of the isolation structure, and wherein the releasable layer is releasable from the semiconductor package.

公开(公告)号：US11804424B2

公开(公告)日：2023-10-31

申请号：US17108079

申请日：2020-12-01

Applicant: Infineon Technologies Austria AG

Inventor： Ralf Otremba ,  Chii Shang Hong ,  Jo Ean Joanna Chye ,  Teck Sim Lee ,  Hui Kin Lit ,  Ke Yan Tean ,  Lee Shuang Wang ,  Wei-Shan Wang

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49562 ,  H01L23/3107 ,  H01L23/4952 ,  H01L24/83 ,  H01L2224/8381 ,  H01L2224/8382

Abstract: A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

公开(公告)号：US20210175157A1

公开(公告)日：2021-06-10

申请号：US17108079

申请日：2020-12-01

Applicant: Infineon Technologies Austria AG

Inventor： Ralf Otremba ,  Chii Shang Hong ,  Jo Ean Joanna Chye ,  Teck Sim Lee ,  Hui Kin Lit ,  Ke Yan Tean ,  Lee Shuang Wang ,  Wei-Shan Wang

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device includes a carrier, a first external contact, a second external contact, and a semiconductor die. The semiconductor die has a first main face, a second main face opposite to the first main face, a first contact pad disposed on the first main face, a second contact pad disposed on the second main face, a third contact pad disposed on the second main face, and a vertical transistor. The semiconductor die is disposed with the first main face on the carrier. A clip connects the second contact pad to the second external contact. A first bond wire is connected between the third contact pad and the first external contact. The first bond wire is disposed at least partially under the clip.

公开(公告)号：US20230395462A1

公开(公告)日：2023-12-07

申请号：US18235668

申请日：2023-08-18

Applicant: Infineon Technologies Austria AG

Inventor： Li Fong Chong ,  Yee Beng Daryl Yeow ,  Chil Shang Hong ,  Azlina Kassim ,  Hui Kin Lit

IPC: H01L23/433 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L23/4334 ,  H01L21/561 ,  H01L21/565 ,  H01L23/315 ,  H01L23/49503 ,  H01L23/562 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48245

Abstract: A semiconductor device includes a semiconductor package, including a package body that includes an encapsulant portion and an isolation structure, a semiconductor die embedded within the package body, and a plurality of leads that protrude out from the encapsulant body, wherein the encapsulant portion and the isolation structure are each electrically insulating structures, wherein the isolation structure has a greater thermal conductivity than the encapsulant portion, and wherein the isolation structure is thermally coupled to the semiconductor die, and a releasable layer affixed to the semiconductor package, wherein a first outer face of the package body includes a first surface of the isolation structure, wherein the releasable layer at least partially covers the first surface of the isolation structure, and wherein the releasable layer is releasable from the semiconductor package.

公开(公告)号：US11791238B2

公开(公告)日：2023-10-17

申请号：US17355342

申请日：2021-06-23

Applicant: Infineon Technologies Austria AG

Inventor： Li Fong Chong ,  Yee Beng Daryl Yeow ,  Chii Shang Hong ,  Azlina Kassim ,  Hui Kin Lit

IPC: H01L23/495 ,  H01L23/433 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L23/4334 ,  H01L21/561 ,  H01L21/565 ,  H01L23/315 ,  H01L23/49503 ,  H01L23/562 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48245

Abstract: A semiconductor device includes a semiconductor package, including a package body that includes an encapsulant portion and an isolation structure, a semiconductor die embedded within the package body, and a plurality of leads that protrude out from the encapsulant body, wherein the encapsulant portion and the isolation structure are each electrically insulating structures, wherein the isolation structure has a greater thermal conductivity than the encapsulant portion, and wherein the isolation structure is thermally coupled to the semiconductor die, and a releasable layer affixed to the semiconductor package, wherein a first outer face of the package body includes a first surface of the isolation structure, wherein the releasable layer at least partially covers the first surface of the isolation structure, and wherein the releasable layer is releasable from the semiconductor package.

公开(公告)号：US20220415753A1

公开(公告)日：2022-12-29

申请号：US17355342

申请日：2021-06-23

Applicant: Infineon Technologies Austria AG

Inventor： Li Fong Chong ,  Yee Beng Daryl Yeow ,  Chii Shang Hong ,  Azlina Kassim ,  Hui Kin Lit

IPC: H01L23/433 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00 ,  H01L21/56

Abstract: A semiconductor device includes a semiconductor package, including a package body that includes an encapsulant portion and an isolation structure, a semiconductor die embedded within the package body, and a plurality of leads that protrude out from the encapsulant body, wherein the encapsulant portion and the isolation structure are each electrically insulating structures, wherein the isolation structure has a greater thermal conductivity than the encapsulant portion, and wherein the isolation structure is thermally coupled to the semiconductor die, and a releasable layer affixed to the semiconductor package, wherein a first outer face of the package body includes a first surface of the isolation structure, wherein the releasable layer at least partially covers the first surface of the isolation structure, and wherein the releasable layer is releasable from the semiconductor package.