公开(公告)号：US20230123783A1

公开(公告)日：2023-04-20

申请号：US17959458

申请日：2022-10-04

申请人： Infineon Technologies AG

发明人： Tomas Reiter ,  Dietmar Spitzer ,  Christoph Koch ,  Patrik Holt Jones

IPC分类号： G01R15/20 ,  H01L23/373 ,  H01L23/367 ,  H01L23/498 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H02M1/00

摘要： A semiconductor module includes a semiconductor die, an encapsulation encapsulating the die, and first and second power contacts electrically coupled to the die. The power contacts each include an external part exposed from the encapsulation and an overlapping part. The power contacts are configured to carry respective first and second currents. A current flow of the first current in the external part of the first power contact points into or out of the semiconductor module. A current flow of the second current in the external part of the second power contact points in the opposite direction of the first current flow. The overlapping parts overlap such that the current flows point in the same direction in the overlapping parts. The overlapping parts include overlapping slots configured to accept a current sensor element for measuring a combined current in the overlapping parts.

公开(公告)号：US20240120309A1

公开(公告)日：2024-04-11

申请号：US18476417

申请日：2023-09-28

申请人： Infineon Technologies AG

发明人： Oliver Kreiter ,  Patrik Holt Jones

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L25/07

CPC分类号： H01L24/40 ,  H01L23/49562 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/4005 ,  H01L2224/40137 ,  H01L2224/40157 ,  H01L2224/48137 ,  H01L2924/1815

摘要： A power electronic device includes: a carrier having at least two die mounting areas; a power semiconductor die(s) mounted on the carrier at a first mounting area and having a first side facing the carrier and an opposite second side, a second die mounting area being free of any semiconductor die; and a contact clip arranged over the die and second die mounting area. The contact clip is at least partially arranged in a first plane, with a first part over the die being bent downwards such it is arranged in a second plane below the first plane and coupled to the second side of the die. A second part of the contact clip over the second die mounting area is bent upwards such that the second part is arranged in a third plane above the first plane, or is free of any bend and arranged in the first plane.

公开(公告)号：US20240047289A1

公开(公告)日：2024-02-08

申请号：US18356762

申请日：2023-07-21

申请人： Infineon Technologies AG

发明人： Marco Bässler ,  Patrik Holt Jones ,  Ludwig Busch ,  Egbert Lamminger

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/48 ,  H01L23/495

CPC分类号： H01L23/3121 ,  H01L21/56 ,  H01L23/48 ,  H01L23/495 ,  H01L25/07

摘要： A molded power semiconductor module includes: one or more power semiconductor dies; a molded body at least partially encapsulating each power semiconductor die and having opposing first and second sides, and lateral sides connecting the first and second sides; and first and second power contacts arranged laterally next to each other at a first one of the lateral sides of the molded body and electrically coupled to the power semiconductor die(s). The power contacts each have opposing first and second sides, each first side having an exposed part exposed from the molded body, each second side having a part that is arranged in a vertical direction below an outline of the respective exposed part of the first side and that is at least partially covered by a protrusion part of the molded body. The vertical direction is perpendicular to the first and second sides of the power contacts.