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公开(公告)号：US11621204B2
公开(公告)日：2023-04-04
申请号：US17177703
申请日：2021-02-17
发明人： Oliver Markus Kreiter , Ludwig Busch , Angel Enverga , Mei Fen Hiew , Tian See Hoe , Elvis Keli , Kean Ming Koe , Sanjay Kumar Murugan , Michael Niendorf , Ivan Nikitin , Bernhard Stiller , Thomas Stoek , Ke Yan Tean
IPC分类号： H01L23/495 , H01L23/31 , H01L21/56 , H01L21/48
摘要： A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.
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公开(公告)号：US20220262693A1
公开(公告)日：2022-08-18
申请号：US17177703
申请日：2021-02-17
发明人： Oliver Markus Kreiter , Ludwig Busch , Angel Enverga , Mei Fen Hiew , Tian See Hoe , Elvis Keli , Kean Ming Koe , Sanjay Kumar Murugan , Michael Niendorf , Ivan Nikitin , Bernhard Stiller , Thomas Stoek , Ke Yan Tean
IPC分类号： H01L23/31 , H01L23/495 , H01L21/48 , H01L21/56
摘要： A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.
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公开(公告)号：US20210398887A1
公开(公告)日：2021-12-23
申请号：US16907734
申请日：2020-06-22
IPC分类号： H01L23/495 , H01L23/00
摘要： A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.
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公开(公告)号：US20240047289A1
公开(公告)日：2024-02-08
申请号：US18356762
申请日：2023-07-21
IPC分类号： H01L23/31 , H01L21/56 , H01L23/48 , H01L23/495
CPC分类号： H01L23/3121 , H01L21/56 , H01L23/48 , H01L23/495 , H01L25/07
摘要： A molded power semiconductor module includes: one or more power semiconductor dies; a molded body at least partially encapsulating each power semiconductor die and having opposing first and second sides, and lateral sides connecting the first and second sides; and first and second power contacts arranged laterally next to each other at a first one of the lateral sides of the molded body and electrically coupled to the power semiconductor die(s). The power contacts each have opposing first and second sides, each first side having an exposed part exposed from the molded body, each second side having a part that is arranged in a vertical direction below an outline of the respective exposed part of the first side and that is at least partially covered by a protrusion part of the molded body. The vertical direction is perpendicular to the first and second sides of the power contacts.
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公开(公告)号：US11682611B2
公开(公告)日：2023-06-20
申请号：US16907734
申请日：2020-06-22
IPC分类号： H01L23/495 , H01L23/00
CPC分类号： H01L23/49575 , H01L23/4952 , H01L23/49503 , H01L23/49562 , H01L23/49568 , H01L24/48 , H01L2224/48137 , H01L2924/1203 , H01L2924/13055
摘要： A power semiconductor module includes a leadframe having a first die pad, a second die pad separated from the first die pad, a first power lead formed as an extension of the first die pad, a second power lead separated from the first and second die pads, and a first connection region formed as an extension of the second power lead alongside the second die pad. A first plurality of power semiconductor dies is attached to the first die pad and electrically coupled in parallel. A second plurality of power semiconductor dies is attached to the second die pad and electrically coupled in parallel. A first electrical connection extends between the first plurality of power semiconductor dies and the second die pad in a first direction. A second electrical connection extends between the second plurality of power semiconductor dies and the first connection region in the first direction.
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