公开(公告)号：US20200013722A1

公开(公告)日：2020-01-09

申请号：US16577316

申请日：2019-09-20

Applicant: Infineon Technologies AG

Inventor： Frank Hille ,  Ravi Keshav Joshi ,  Michael Fugger ,  Oliver Humbel ,  Thomas Laska ,  Matthias Müller ,  Roman Roth ,  Carsten Schaeffer ,  Hans-Joachim Schulze ,  Holger Schulze ,  Juergen Steinbrenner ,  Frank Umbach

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

公开(公告)号：US20150001719A1

公开(公告)日：2015-01-01

申请号：US13927923

申请日：2013-06-26

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Matthias Müller ,  Francisco Javier Santos Rodriguez ,  Daniel Schlögl

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76841 ,  H01L29/0615 ,  H01L29/0619

Abstract: A power semiconductor device includes a semiconductor body, having an active zone and a high voltage peripheral zone laterally adjacent to each other, the high voltage peripheral zone laterally surrounding the active zone. The device further includes a metallization layer on a front surface of the semiconductor body and connected to the active zone, a first barrier layer, comprising a high-melting metal or a high-melting alloy, between the active zone and the metallization layer, and a second barrier layer covering at least a part of the peripheral zone, the second barrier layer comprising an amorphous semi-isolating material. The first barrier layer and the second barrier layer partially overlap and form an overlap zone. The overlap zone extends over an entire circumference of the active zone. A method for producing such a power semiconductor device is also provided.

Abstract translation: 功率半导体器件包括具有横向相邻的有源区和高电压周边区的半导体本体，所述高电压周边区横向围绕有源区。 该器件还包括在半导体主体的前表面上并连接到有源区的金属化层，在活性区和金属化层之间包括高熔点金属或高熔点合金的第一阻挡层，以及 覆盖所述周边区域的至少一部分的第二阻挡层，所述第二阻挡层包括非晶半隔离材料。 第一阻挡层和第二阻挡层部分地重叠并形成重叠区域。 重叠区域在活动区域​​的整个圆周上延伸。 还提供了一种用于制造这种功率半导体器件的方法。

公开(公告)号：US10777506B2

公开(公告)日：2020-09-15

申请号：US16577316

申请日：2019-09-20

Applicant: Infineon Technologies AG

Inventor： Frank Hille ,  Ravi Keshav Joshi ,  Michael Fugger ,  Oliver Humbel ,  Thomas Laska ,  Matthias Müller ,  Roman Roth ,  Carsten Schaeffer ,  Hans-Joachim Schulze ,  Holger Schulze ,  Juergen Steinbrenner ,  Frank Umbach

IPC: H01L23/532 ,  H01L23/485 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

公开(公告)号：US09287165B2

公开(公告)日：2016-03-15

申请号：US13927923

申请日：2013-06-26

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Matthias Müller ,  Francisco Javier Santos Rodriguez ,  Daniel Schlögl

IPC: H01L21/76 ,  H01L21/768 ,  H01L29/06

CPC classification number: H01L21/76841 ,  H01L29/0615 ,  H01L29/0619

Abstract: A power semiconductor device includes a semiconductor body, having an active zone and a high voltage peripheral zone laterally adjacent to each other, the high voltage peripheral zone laterally surrounding the active zone. The device further includes a metallization layer on a front surface of the semiconductor body and connected to the active zone, a first barrier layer, comprising a high-melting metal or a high-melting alloy, between the active zone and the metallization layer, and a second barrier layer covering at least a part of the peripheral zone, the second barrier layer comprising an amorphous semi-isolating material. The first barrier layer and the second barrier layer partially overlap and form an overlap zone. The overlap zone extends over an entire circumference of the active zone. A method for producing such a power semiconductor device is also provided.

Abstract translation: 功率半导体器件包括具有横向相邻的有源区和高电压周边区的半导体本体，所述高电压周边区横向围绕有源区。 该器件还包括在半导体主体的前表面上并连接到有源区的金属化层，在活性区和金属化层之间包含高熔点金属或高熔点合金的第一阻挡层，以及 覆盖所述周边区域的至少一部分的第二阻挡层，所述第二阻挡层包括非晶半隔离材料。 第一阻挡层和第二阻挡层部分地重叠并形成重叠区域。 重叠区域在活动区域​​的整个圆周上延伸。 还提供了一种用于制造这种功率半导体器件的方法。