Invention Application
- Patent Title: Silicon Carbide Semiconductor Device Having a Metal Adhesion and Barrier Structure and a Method of Forming Such a Semiconductor Device
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Application No.: US16577316Application Date: 2019-09-20
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Publication No.: US20200013722A1Publication Date: 2020-01-09
- Inventor: Frank Hille , Ravi Keshav Joshi , Michael Fugger , Oliver Humbel , Thomas Laska , Matthias Müller , Roman Roth , Carsten Schaeffer , Hans-Joachim Schulze , Holger Schulze , Juergen Steinbrenner , Frank Umbach
- Applicant: Infineon Technologies AG
- Priority: DE102016104788.0 20160315
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L23/522 ; H01L23/528
Abstract:
According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.
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