公开(公告)号：US12205919B2

公开(公告)日：2025-01-21

申请号：US17555709

申请日：2021-12-20

Applicant: Infineon Technologies AG

Inventor： Chuan Cheah ,  Josef Hoeglauer ,  Tobias Polster

IPC: H01L21/78 ,  H01L21/56 ,  H01L23/00 ,  H01L23/373 ,  H01L23/538 ,  H01L25/00 ,  H01L25/07 ,  H01L29/40 ,  H01L29/45

Abstract: A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.

公开(公告)号：US20230197663A1

公开(公告)日：2023-06-22

申请号：US17555709

申请日：2021-12-20

Applicant: Infineon Technologies AG

Inventor： Chuan Cheah ,  Josef Hoeglauer ,  Tobias Polster

IPC: H01L23/00 ,  H01L21/78 ,  H01L29/40 ,  H01L21/56 ,  H01L25/00 ,  H01L25/07 ,  H01L23/538

CPC classification number: H01L24/24 ,  H01L21/78 ,  H01L29/401 ,  H01L21/568 ,  H01L24/82 ,  H01L25/50 ,  H01L25/072 ,  H01L23/5389 ,  H01L29/45

Abstract: A method of processing a semiconductor wafer includes: forming an electronic device at each die location of the semiconductor wafer; partially forming a frontside metallization over a frontside of the semiconductor wafer at each die location; partially forming a backside metallization over a backside of the semiconductor wafer at each die location; and after partially forming both the frontside metallization and the backside metallization but without completing either the frontside metallization or the backside metallization, singulating the semiconductor wafer between the die locations to form a plurality of individual semiconductor dies, wherein the partially formed frontside metallization and the partially formed backside metallization have a same composition. Semiconductor dies and methods of producing semiconductor modules are also described.