公开(公告)号：US20240113216A1

公开(公告)日：2024-04-04

申请号：US18471777

申请日：2023-09-21

Applicant: Infineon Technologies AG

Inventor： Yuliya Lisunova ,  Andreas Frank Behrendt ,  Carsten Schaeffer ,  Simon Paul Sindermann ,  Adriana Mercedes Sanchez Lotero ,  Silke Liebscher

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L29/7811 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66712

Abstract: Disclosed herein is a power semiconductor device including a semiconductor body, a first load terminal, a second load terminal, an active region, an edge termination region, and a thin film layer that includes a bulk material and a laminar filler compound. Furthermore, a method of producing such a power semiconductor device is described herein, the method including: providing a thin film including a mixture of a bulk material component and a laminar filler compound onto a surface of at least parts of the edge termination region and/or over at least parts of the first load terminal; and curing the obtained mixture of the bulk material and laminar filler compound to generate a thin-film layer that includes a bulk material and a laminar filler compound.