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公开(公告)号：US09857314B1
公开(公告)日：2018-01-02
申请号：US15392713
申请日：2016-12-28
Applicant: Industrial Technology Research Institute
Inventor： Fu-Cheng Yang , Chia-Liang Yeh , Wei-Hsiung Tsai , Keng-Li Lin , Yeou-Sung Lin , Mao-Sheng Huang
IPC: G01J3/00 , G01N21/958 , G01N21/47 , G01N21/95
CPC classification number: G01N21/958 , G01N21/4788 , G01N2021/9513
Abstract: A device and method for detecting crystal quality of a low temperature poly-silicon (LTPS) backplane are provided, the method including: projecting narrowband light to the LTPS backplane; performing image capturing of each position on a surface of the LTPS backplane at a first angle in a first axial direction to obtain a first diffraction image, the first angle being an angle of maximum diffraction light intensity in the first axial direction; performing another image capturing of each position on the surface of the LTPS backplane at a second angle in a second axial direction to obtain a second diffraction image, the second angle being an angle of maximum diffraction light intensity in the second axial direction; and determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution obtained from the first and second diffraction images.
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公开(公告)号：US11656181B2
公开(公告)日：2023-05-23
申请号：US17135874
申请日：2020-12-28
Applicant: Industrial Technology Research Institute
Inventor： Yan-Rung Lin , Chih-Hsiang Liu , Chung-Lun Kuo , Hsiang-Chun Wei , Yeou-Sung Lin , Chieh-Yi Lo
CPC classification number: G01N21/66 , G01N21/8806 , G01N2201/062
Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.
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公开(公告)号：US20210231570A1
公开(公告)日：2021-07-29
申请号：US17135874
申请日：2020-12-28
Applicant: Industrial Technology Research Institute
Inventor： Yan-Rung Lin , Chih-Hsiang Liu , Chung-Lun Kuo , Hsiang-Chun Wei , Yeou-Sung Lin , Chieh-Yi Lo
Abstract: An inspection apparatus for inspecting a light-emitting diode wafer is provided. The inspection apparatus includes a Z-axis translation stage, a sensing probe, a height measurement module, a carrier, an illumination light source, and a processing device. The sensing probe is integrated with the Z-axis translation stage. The Z-axis translation stage is adapted to drive the sensing probe to move in a Z axis. The sensing probe includes a photoelectric sensor, a beam splitter, and a photoelectric sensing structure. One of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam penetrating the beam splitter, and the other one of the photoelectric sensor of the sensing probe and the height measurement module is adapted to receive a light beam reflected by the beam splitter. The carrier is configured to carry the light-emitting diode wafer. The illumination light source is configured to emit an illumination beam to irradiate the light-emitting diode wafer. An inspection method for inspecting light-emitting diodes is also provided.
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