公开(公告)号：US09257338B2

公开(公告)日：2016-02-09

申请号：US14615922

申请日：2015-02-06

Applicant: Industrial Technology Research Institute

Inventor： Chung-Chih Wang ,  Pei-Jer Tzeng ,  Cha-Hsin Lin ,  Tzu-Kun Ku

IPC: H01L29/40 ,  H01L21/768 ,  H01L23/48 ,  H01L23/538 ,  H01L23/00 ,  H01L21/321 ,  H01L21/3213 ,  H01L25/00

CPC classification number: H01L21/76898 ,  H01L21/3212 ,  H01L21/32133 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76883 ,  H01L23/481 ,  H01L23/5384 ,  H01L23/562 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/13023 ,  H01L2224/16 ,  H01L2224/16146 ,  H01L2224/81 ,  H01L2224/8114 ,  H01L2224/81911 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: The disclosure provides a TSV substrate structure and the stacked assembly of a plurality of the substrate structures, the TSV substrate structure including: a substrate comprising a first surface, a corresponding second surface, and a TSV communicating the first surface with the second surface through the substrate; and a conductor unit completely filling the TSV, the conductor unit comprising a conductor body which has a first and a second ends corresponding to the first and second surfaces of the substrate, respectively.

Abstract translation: 本公开提供TSV衬底结构和多个衬底结构的层叠组件，TSV衬底结构包括：衬底，其包括第一表面，相应的第二表面以及将第一表面与第二表面通过第二表面连通的TSV 基质; 以及完全填充TSV的导体单元，所述导体单元包括分别具有对应于所述基板的第一和第二表面的第一端和第二端的导体本体。