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公开(公告)号：US10943795B2
公开(公告)日：2021-03-09
申请号：US16246417
申请日：2019-01-11
申请人： Indium Corporation
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50 , H01L23/367 , H01L23/373 , H01L33/64
摘要： A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.
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公开(公告)号：US10607857B2
公开(公告)日：2020-03-31
申请号：US15833982
申请日：2017-12-06
申请人： Indium Corporation
IPC分类号： H01L23/367 , H01L23/40 , H01L33/64 , H01L21/48 , H01L23/373
摘要： A method of joining a semiconductor die to a passive heat exchanger can include applying a bond enhancing agent to a semiconductor device; creating an assembly that includes a thermal interface disposed on the semiconductor device such that a first major surface of the thermal interface material is in touching relation with the bond enhancing agent on the semiconductor device, and a heat exchanger disposed in touching relation with a second major surface of the thermal interface material; and reflowing the assembly such that the thermal interface bonds the heat exchanger to the semiconductor device. Embodiments can use the ability of indium to bond to a non-metallic surface to form the thermal interface, which may be enhanced by a secondary coating on either or both joining surfaces.
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公开(公告)号：US10943796B2
公开(公告)日：2021-03-09
申请号：US16721549
申请日：2019-12-19
申请人： INDIUM CORPORATION
IPC分类号： H01L23/36 , H01L23/373 , H01L21/48 , H01L23/367 , H01L33/64
摘要： A semiconductor device assembly includes: a semiconductor device; a heat exchanger; and a thermal interface material. In embodiments, the thermal interface material may contact a facing surface of the heat exchanger, the thermal interface material includes alloys that react with a bond enhancing agent to form an indium alloy layer in a portion of the thermal interface. In embodiments, a solid, solder preformed thermal interface material includes an indium metal and may be disposed on the first surface of the semiconductor device; and a liquid metal bond enhancing agent may be disposed on a first surface of the semiconductor device; and contacting a facing surface of the heat exchanger.
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