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公开(公告)号：US09705021B2
公开(公告)日：2017-07-11
申请号：US14527878
申请日：2014-10-30
IPC分类号： H01L31/044 , H01L31/054 , H01L31/048 , H02S20/10 , H02S20/32 , H02S20/30 , H02S40/42 , H02S20/20 , F24J2/46 , F24J2/12
CPC分类号： H01L31/0547 , F24S23/71 , F24S70/30 , F24S80/45 , H01L31/048 , H02S20/10 , H02S20/20 , H02S20/30 , H02S20/32 , H02S40/425 , Y02E10/40 , Y02E10/52 , Y02E10/544
摘要： A solar pod system, comprising of an oval transparent enclosure. The oval transparent enclosure encapsulates a circular paraboloidal reflector mounted on solar cell. The solar cell extends over the circular parabolic reflector to place the focus of the paraboloidal reflector on the solar cell, whereby the solar cell receives light reflected by the circular parabolic reflector.
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公开(公告)号：US09549044B1
公开(公告)日：2017-01-17
申请号：US14948614
申请日：2015-11-23
CPC分类号： H04L67/327 , H04L67/306 , H04L67/34
摘要： A method and associated system. A user interest rating for a downloadable item stored outside a user device is computed, which includes: maintaining a user profile of a user's preference for types of items that include the downloadable item, identifying one or more characteristics of the downloadable item, and predicting a likely level of user interest for the downloadable item based on the identified characteristics of the downloadable item and the user profile. A data impact rating for the downloadable item is computed, which includes identifying parameters. A download decision, of whether to download the downloadable item, is computed in dependence on the user interest rating for the downloadable item and the data impact rating for the downloadable item.
摘要翻译： 一种方法和相关系统。 计算存储在用户设备外部的可下载项目的用户兴趣等级，其包括：维护用户对包括可下载项目的项目类型的偏好的用户简档，识别可下载项目的一个或多个特征，以及预测 基于所识别的可下载项目的特征和用户简档，可下载项目的可能用户兴趣水平。 计算可下载项目的数据影响等级，其中包括识别参数。 是否下载可下载项目的下载决定是根据可下载项目的用户兴趣等级和可下载项目的数据影响等级计算的。
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3.发明申请公开(公告)号：US20140283616A1
公开(公告)日：2014-09-25
申请号：US13849565
申请日：2013-03-25
发明人： Balaji Jayaraman , Kota V. R. M. Murali , Edward J. Nowak , Ninad D. Sathaye , Rajesh Sathiyanarayanan
CPC分类号： G01L9/0042 , G01K7/015 , G01N27/002 , G01N27/4141
摘要： A workfunction modulation-based sensor comprising a field-effect transistor (FET). The FET comprises a substrate, a gate dielectric, a metal gate, a source, a drain, and a layer of sensing material that is electrically connected to the metal gate. An electrical connection that connects to the source of the FET. An electrical connection that connects to the drain of the FET. An electrical connection that connects to the layer of sensing material. An environment that includes an adsorbate gas surrounding, at least a portion of, the layer of sensing material. Wherein the sensing material is adapted to adsorb, at least in part, the adsorbate gas. The amount of adsorbate gas adsorbed on the layer of sensing material modulates the workfunction of the FET such that the degree of adsorbate gas adsorption corresponds to one of the temperature or pressure associated with the environment of the FET.
摘要翻译： 一种基于功能调制的传感器，包括场效应晶体管（FET）。 FET包括电连接到金属栅极的衬底，栅极电介质，金属栅极，源极，漏极和感测材料层。 连接到FET源极的电气连接。 连接到FET的漏极的电气连接。 连接到传感材料层的电气连接。 环境，其包括围绕传感材料层的至少一部分的被吸附气体。 其中感测材料适于至少部分吸附被吸附物质气体。 吸附在感应材料层上的吸附气体的量调节FET的功函数，使得吸附气体吸附的程度对应于与FET的环境相关的一个温度或压力。
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4.发明授权公开(公告)号：US10347494B2
公开(公告)日：2019-07-09
申请号：US15948297
申请日：2018-04-09
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3115 , H01L21/8234 , H01L21/225 , H01L27/088 , H01L29/10 , H01L29/51 , H01L29/66 , H01L29/78 , H01L21/324 , H01L29/49
摘要： A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.
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5.发明申请公开(公告)号：US20180096851A1
公开(公告)日：2018-04-05
申请号：US15815146
申请日：2017-11-16
IPC分类号： H01L21/28 , H01L21/225 , H01L29/10 , H01L21/3115 , H01L21/02 , H01L29/51 , H01L29/49 , H01L21/324 , H01L29/78 , H01L29/66 , H01L27/088 , H01L21/8234
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/225 , H01L21/28176 , H01L21/3115 , H01L21/31155 , H01L21/324 , H01L21/823462 , H01L27/088 , H01L29/1054 , H01L29/495 , H01L29/4966 , H01L29/511 , H01L29/517 , H01L29/66477 , H01L29/7843 , H01L29/7849 , H01L29/785
摘要： A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.
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公开(公告)号：US20180083116A1
公开(公告)日：2018-03-22
申请号：US15813634
申请日：2017-11-15
IPC分类号： H01L29/49 , H01L21/28 , H01L29/786 , H01L29/06 , H01L29/66 , H01L29/423
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823431 , H01L21/823437 , H01L27/0886 , H01L29/0673 , H01L29/42392 , H01L29/4908 , H01L29/513 , H01L29/66742 , H01L29/785 , H01L29/78696
摘要： A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.
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7.发明授权公开(公告)号：US09627484B1
公开(公告)日：2017-04-18
申请号：US14880918
申请日：2015-10-12
IPC分类号： H01L21/8238 , H01L29/10 , H01L27/088 , H01L29/51 , H01L29/78 , H01L29/66 , H01L21/3115
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/225 , H01L21/28176 , H01L21/3115 , H01L21/31155 , H01L21/324 , H01L21/823462 , H01L27/088 , H01L29/1054 , H01L29/495 , H01L29/4966 , H01L29/511 , H01L29/517 , H01L29/66477 , H01L29/7843 , H01L29/7849
摘要： A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.
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8.发明申请公开(公告)号：US20170103982A1
公开(公告)日：2017-04-13
申请号：US15157772
申请日：2016-05-18
IPC分类号： H01L27/088 , H01L21/28 , H01L21/324 , H01L29/49 , H01L21/8234
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/225 , H01L21/28176 , H01L21/3115 , H01L21/31155 , H01L21/324 , H01L21/823462 , H01L27/088 , H01L29/1054 , H01L29/495 , H01L29/4966 , H01L29/511 , H01L29/517 , H01L29/66477 , H01L29/7843 , H01L29/7849
摘要： A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.
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公开(公告)号：US09583486B1
公开(公告)日：2017-02-28
申请号：US14946245
申请日：2015-11-19
IPC分类号： H01L27/08 , H01L29/49 , H01L29/51 , H01L27/088 , H01L29/423 , H01L21/8234
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823431 , H01L21/823437 , H01L27/0886 , H01L29/0673 , H01L29/42392 , H01L29/4908 , H01L29/513 , H01L29/66742 , H01L29/785 , H01L29/78696
摘要： A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.
摘要翻译： 工作功能设置金属堆叠包括在高介电常数层上形成的包括高介电常数层和扩散防止层的层的构造。 铝掺杂的TiC层具有大于5nm的厚度，其中在两个区域之间采用层的构型作为扩散阻挡层，以防止两个区域之间的质量扩散。
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10.发明授权公开(公告)号：US10319596B2
公开(公告)日：2019-06-11
申请号：US15620197
申请日：2017-06-12
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3115 , H01L21/8234 , H01L21/225 , H01L27/088 , H01L29/10 , H01L29/51 , H01L29/66 , H01L29/78 , H01L21/324 , H01L29/49
摘要： A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.
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