公开(公告)号：US20230301207A1

公开(公告)日：2023-09-21

申请号：US17655081

申请日：2022-03-16

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： CHING-TZU CHEN ,  JUNTAO LI ,  KANGGUO CHENG ,  CARL RADENS

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L45/1226 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

摘要： A phase change memory (PCM) semiconductor device is provided. The PCM semiconductor device includes: a phase change material stack on a substrate, the phase change material stack including at least two phase change material layers each separated by an insulating layer; a first electrode on a first side of the phase change material stack; and a second electrode on a second side of the phase change material stack, wherein a first one of the phase change material layers has a length that is different from a length of a second one of the phase change material layers.

公开(公告)号：US20230082961A1

公开(公告)日：2023-03-16

申请号：US17472145

申请日：2021-09-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： JUNTAO LI ,  KANGGUO CHENG ,  CARL RADENS ,  RUILONG XIE

IPC分类号： G11C13/00

摘要： A memory device is provided. The memory device includes a ReRAM memory element, and a PCM memory element that is electrically connected in parallel with the ReRAM memory element.