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Patent Agency Ranking
公开(公告)号：US20230120804A1
公开(公告)日：2023-04-20
申请号：US17907048
申请日：2020-03-23
Inventor： Qi Wang , Yiyang Jiang , Qianhui Li , Zongliang Huo
Abstract: The method includes: reading a memory cell having a encoded information bit, so as to obtain an LLR value of a current memory cell with reference to a pre-established LLR table according to a storage time, a threshold voltage partition and a comprehensive distribution corresponding to the current memory cell during reading; and performing a soft decoding operation on a codeword in the memory cell having the encoded information bit according to the read LLR value of the current memory cell, wherein the comprehensive distribution of the current memory cell is determined according to an influence of a memory cell adjacent to the current memory cell on a distribution of the current memory cell; an input of the pre-established LLR table comprises a storage time, a threshold voltage partition and a comprehensive distribution, and an output of the pre-established LLR table comprises an LLR value.
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公开(公告)号：US12197282B2
公开(公告)日：2025-01-14
申请号：US18553929
申请日：2021-04-08
Inventor： Qianhui Li , Qi Wang , Liu Yang , Yiyang Jiang , Xiaolei Yu , Jing He , Zongliang Huo , Tianchun Ye
Abstract: A data recovery method for a flash memory includes: reading data from the flash memory by using preset read voltage; calculating a check node error rate corresponding to the data; calculating a read voltage adjustment step size according to the check node error rate; adjusting the preset read voltage according to the read voltage adjustment step size and reading data from the flash memory by using the adjusted preset read voltage, and repeating the operation of calculating a check node error rate corresponding to the data to operation of adjusting the preset read voltage according to the read voltage adjustment step size and reading data from the flash memory by using the adjusted preset read voltage, until the check node error rate is minimum; and selecting a read voltage corresponding to the minimum check node error rate to read data from the flash memory, so as to perform data recovery.
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公开(公告)号：US12088323B2
公开(公告)日：2024-09-10
申请号：US18254377
申请日：2020-11-25
Inventor： Qi Wang , Yiyang Jiang , Qianhui Li , Zongliang Huo , Tianchun Ye
CPC classification number: H03M13/3905 , G11C29/1201 , G11C29/42 , G11C29/46
Abstract: A read-write method includes: sequentially writing, in a first direction, a code word obtained by information-bit encoding into a target memory cell in each layer of memory cell array in the three-dimensional memory; randomly reading the target memory cell in each layer of memory cell array, or sequentially reading the target memory cell in each layer of memory cell array in a second direction; and determining an LLR value of a current target memory cell according to a storage time corresponding to the current target memory cell when reading, a threshold voltage partition corresponding to the current target memory cell when reading, a comprehensive distribution state corresponding to the current target memory cell when reading, and a pre-established LLR table, so as to perform a soft decoding operation on the code word in the current target memory cell based on the LLR value of the current target memory cell.
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公开(公告)号：US12068757B2
公开(公告)日：2024-08-20
申请号：US17907048
申请日：2020-03-23
Inventor： Qi Wang , Yiyang Jiang , Qianhui Li , Zongliang Huo
IPC: H03M13/11 , H03M13/15 , H03M13/39 , G06F11/00 , G11C29/52 , H03M13/25 , H03M13/29 , H03M13/37 , H03M13/45
CPC classification number: H03M13/1111 , H03M13/154 , H03M13/3927 , G06F11/00 , G11C29/52 , H03M13/1108 , H03M13/255 , H03M13/2948 , H03M13/3746 , H03M13/45
Abstract: The method includes: reading a memory cell having a encoded information bit, so as to obtain an LLR value of a current memory cell with reference to a pre-established LLR table according to a storage time, a threshold voltage partition and a comprehensive distribution corresponding to the current memory cell during reading; and performing a soft decoding operation on a codeword in the memory cell having the encoded information bit according to the read LLR value of the current memory cell, wherein the comprehensive distribution of the current memory cell is determined according to an influence of a memory cell adjacent to the current memory cell on a distribution of the current memory cell; an input of the pre-established LLR table comprises a storage time, a threshold voltage partition and a comprehensive distribution, and an output of the pre-established LLR table comprises an LLR value.
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5.发明公开公开(公告)号：US20240038318A1
公开(公告)日：2024-02-01
申请号：US18254377
申请日：2020-11-25
Inventor： Qi Wang , Yiyang Jiang , Qianhui Li , Zongliang Huo , Tianchun Ye
CPC classification number: G11C29/42 , G11C29/46 , G11C29/1201
Abstract: A read-write method includes: sequentially writing, in a first direction, a code word obtained by information-bit encoding into a target memory cell in each layer of memory cell array in the three-dimensional memory; randomly reading the target memory cell in each layer of memory cell array, or sequentially reading the target memory cell in each layer of memory cell array in a second direction; and determining an LLR value of a current target memory cell according to a storage time corresponding to the current target memory cell when reading, a threshold voltage partition corresponding to the current target memory cell when reading, a comprehensive distribution state corresponding to the current target memory cell when reading, and a pre-established LLR table, so as to perform a soft decoding operation on the code word in the current target memory cell based on the LLR value of the current target memory cell.
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