公开(公告)号：US3461438A

公开(公告)日：1969-08-12

申请号：US3461438D

申请日：1964-04-06

Applicant: IBM

Inventor： CHANG HSU ,  GENOVESE EUGENE R

IPC: G11C7/02 ,  G11C11/14 ,  G11B5/02

CPC classification number: G11C7/02 ,  G11C11/14

公开(公告)号：US3701125A

公开(公告)日：1972-10-24

申请号：US3701125D

申请日：1970-12-31

Applicant: IBM

Inventor： CHANG HSU ,  GENOVESE EUGENE R

IPC: G11C19/08 ,  H03K19/168 ,  H03M7/00 ,  G11C11/14

CPC classification number: H03K19/168 ,  G11C19/0883 ,  H03M7/002

Abstract: A complete on-chip memory system for cylindrical bubble domains and a magnetic chip decoder for the system. Write and read decoding, memory storage, and sensing are provided on a single magnetic chip with a minimum number of interconnections and ease of fabrication. Decoding is achieved using magnetic overlays for propagation and current loops to provide selective switching at various locations. N control lines enable selective connections between 2N domain generators and 2N shift registers. The decoders have 2N double propagation channels, each of which has two parallel paths. One path connects a generator to a shift register while the other path terminates in a bubble buster. Each shift register comprises a storage loop having bubble splitters, thus enabling NDRO. The storage loops are connected to a double propagation channel in a read decoder. Sensing means are connected to the output of the read decoder.

Abstract translation: 用于圆柱形气泡区域的完整的片上存储器系统和用于该系统的磁芯解码器。 在单个磁芯上提供写和读解码，存储器和感测，其具有最少数量的互连和易于制造。 使用用于传播和电流回路的磁覆盖实现解码，以在各个位置提供选择性切换。 N个控制线使2N个域发生器和2N个移位寄存器之间能够进行选择性连接。 解码器具有2N个双重传播通道，每个传播通道具有两个平行路径。 一条路径将发生器连接到移位寄存器，而另一条路径终止于气泡破坏器。 每个移位寄存器包括具有气泡分离器的存储回路，从而实现NDRO。 存储环路连接到读取解码器中的双重传播通道。 感测装置连接到读取解码器的输出端。

公开(公告)号：US3680065A

公开(公告)日：1972-07-25

申请号：US3680065D

申请日：1970-05-25

Applicant: IBM

Inventor： ALMASI GEORGE S ,  GENOVESE EUGENE R

IPC: G11C13/06 ,  G11C11/14

CPC classification number: G11C13/06

Abstract: A magneto-optical memory element for use as a light beam addressable memory element is formed of permalloy and europium oxide films arranged in adjoining layers. Information is written into the permalloy layer while the device is at room temperature. The ambient temperature is then reduced below the Curie point of europium oxide causing the magnetization of the permalloy layer to be directly transferred by negative or anti-parallel exchange coupling to the europium oxide layer. The europium oxide then preserves the stored information in a form suitable for optical read-out which will take place at this low temperature. The device has the advantage that if the ambient temperature accidentally should rise above the Curie point of europium oxide going even as high as room temperature, the stored information will be preserved in the permalloy film until the temperature again is brought below the Curie point of europium oxide. Whereupon the europium oxide film is restored to its previous magnetic state by negative exchange coupling. Thus, the subject magneto-optical memory device is nonvolatile under fluctuating temperature conditions.

Abstract translation: 用作光束可寻址存储元件的磁光存储元件由邻接层布置的坡莫合金和氧化铕膜形成。 当设备处于室温时，信息写入坡莫合金层。 然后将环境温度降低到低于氧化铕的居里点，导致坡莫合金层的磁化通过负极或反平行交换耦合直接转移到氧化铕层。 然后，氧化铕以适合于在该低温下发生的光学读出的形式保存所存储的信息。 该装置的优点是，如果环境温度意外上升到高于室温的氧化铕的居里点，则存储的信息将保存在坡莫合金膜中，直到温度再次低于铕的居里点 氧化物。 于是通过负交换耦合将氧化铕膜恢复到其先前的磁状态。 因此，本体磁光存储器件在波动的温度条件下是非挥发性的。

公开(公告)号：US3662359A

公开(公告)日：1972-05-09

申请号：US3662359D

申请日：1970-12-31

Applicant: IBM

Inventor： GENOVESE EUGENE R

IPC: G11C19/08 ,  G11C11/14

CPC classification number: G11C19/0858

Abstract: A method and apparatus for creation of cylindrical, single wall domains in selected locations in a magnetic sheet, such as orthoferrite or garnet films. A bias (stabilizing) magnetic field is applied normal to the magnetic sheet to saturate the sheet in one direction so that no reversely magnetized domains are present in the storage area. A localized magnetic field normal to the magnetic sheet but oppositely directed with respect to the bias field is then created. This localized field is produced by the action of an in-plane field and a bar of magnetic material on the sheet, or by a small current loop. The bias field is then reduced until a domain in nucleated at the site of the localized field. The domain will nucleate when the net reversely directed local field is greater than the nucleation field Hn at that location. The bias field is then increased to regulate the diameter of the domain produced. Means are provided to create a variable bias field normal to the sheet and to create an oppositely directed variable localized field at selected locations in the shett.

Abstract translation: 用于在磁性片中的选定位置（例如正铁或石榴石膜）中产生圆柱形单壁畴的方法和装置。 偏磁（稳定）磁场垂直于磁性片施加，使片材在一个方向上饱和，从而在存储区域中不存在反向磁化的畴。 然后产生垂直于磁性片而相对于偏置场相反定向的局部磁场。 该局部化场由片上的平面场和磁性材料棒的作用或小的电流环产生。 然后将偏置场减小直到在局部场的位点成核的畴。 当净反向定向的局部场大于该位置处的成核场Hn时，该域将成核。 然后增加偏置场以调节所产生的结构域的直径。 提供了用于创建垂直于纸张的可变偏置场并且在图中的选定位置处产生相反方向的可变局部化场的装置。