公开(公告)号：US3680065A

公开(公告)日：1972-07-25

申请号：US3680065D

申请日：1970-05-25

Applicant: IBM

Inventor： ALMASI GEORGE S ,  GENOVESE EUGENE R

IPC: G11C13/06 ,  G11C11/14

CPC classification number: G11C13/06

Abstract: A magneto-optical memory element for use as a light beam addressable memory element is formed of permalloy and europium oxide films arranged in adjoining layers. Information is written into the permalloy layer while the device is at room temperature. The ambient temperature is then reduced below the Curie point of europium oxide causing the magnetization of the permalloy layer to be directly transferred by negative or anti-parallel exchange coupling to the europium oxide layer. The europium oxide then preserves the stored information in a form suitable for optical read-out which will take place at this low temperature. The device has the advantage that if the ambient temperature accidentally should rise above the Curie point of europium oxide going even as high as room temperature, the stored information will be preserved in the permalloy film until the temperature again is brought below the Curie point of europium oxide. Whereupon the europium oxide film is restored to its previous magnetic state by negative exchange coupling. Thus, the subject magneto-optical memory device is nonvolatile under fluctuating temperature conditions.

Abstract translation: 用作光束可寻址存储元件的磁光存储元件由邻接层布置的坡莫合金和氧化铕膜形成。 当设备处于室温时，信息写入坡莫合金层。 然后将环境温度降低到低于氧化铕的居里点，导致坡莫合金层的磁化通过负极或反平行交换耦合直接转移到氧化铕层。 然后，氧化铕以适合于在该低温下发生的光学读出的形式保存所存储的信息。 该装置的优点是，如果环境温度意外上升到高于室温的氧化铕的居里点，则存储的信息将保存在坡莫合金膜中，直到温度再次低于铕的居里点 氧化物。 于是通过负交换耦合将氧化铕膜恢复到其先前的磁状态。 因此，本体磁光存储器件在波动的温度条件下是非挥发性的。

公开(公告)号：US3691540A

公开(公告)日：1972-09-12

申请号：US3691540D

申请日：1970-10-06

Applicant: IBM

Inventor： ALMASI GEORGE S ,  CHANG HSU ,  KEEFE GEORGE E ,  THOMPSON DAVID A

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0866

Abstract: An integrated magneto-resistive sensor for detection of magnetic bubble domains. The sensor is located on the chip in which the bubble domains propagate and can be an integral part of the propagation circuitry. Any material exhibiting a magnetoresistive effect can be used, and permalloy is a preferred material. The sensing element can be made very small, and has a length which is usually about equal to a bubble domain diameter.

Abstract translation: 用于检测磁性气泡域的集成磁阻传感器。 传感器位于气泡区域传播的芯片上，并且可以是传播电路的组成部分。 可以使用具有磁阻效应的任何材料，坡莫合金是优选的材料。 感测元件可以制造得非常小，并且具有通常大约等于气泡直径的长度。

公开(公告)号：US3893089A

公开(公告)日：1975-07-01

申请号：US34751673

申请日：1973-04-03

Applicant: IBM

Inventor： ALMASI GEORGE S ,  KEEFE GEORGE E

IPC: G11C19/08 ,  G11C11/14 ,  G11C19/00

CPC classification number: G11C19/0841

Abstract: A two-phase conductor means for propagation of cylindrical magnetic domains (bubble domains) in an underlying magnetic medium, such as orthoferrite or garnet. By pulsing parallel conductors alternately with bi-polar pulses, propagation of domains in the magnetic material is achieved. Very small domains can be used with these conductors and fabrication is more simple than with conventional conductor loops. A bi-directional shift register having four conductors (connected in pairs) per stage is shown.

Abstract translation: 用于在下面的磁性介质（例如正铁或石榴石）中传播圆柱形磁畴（气泡畴）的两相导体装置。 通过用双极脉冲交替地脉冲平行导体，实现磁性材料中的畴的传播。 这些导体可以使用非常小的畴，并且制造比常规的导体环更简单。 示出了具有每个级的四个导体（成对连接）的双向移位寄存器。