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    Method of Controlling Non-Volatile Memory Device
    1.
    发明申请
    Method of Controlling Non-Volatile Memory Device 有权
    控制非易失性存储器件的方法

    公开(公告)号：US20110292729A1

    公开(公告)日：2011-12-01

    申请号：US13116214

    申请日：2011-05-26

    申请人： Hyun-Jin Choi ,  Chan-Ik Park ,  Jeong-Woo Lee ,  Sung-Joo Yoo

    发明人： Hyun-Jin Choi ,  Chan-Ik Park ,  Jeong-Woo Lee ,  Sung-Joo Yoo

    IPC分类号： G11C16/10

    CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10

    摘要： A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.

    摘要翻译： 控制非易失性存储器件的方法包括将处于工作状态的存储体的数量与阈值进行比较。 如果存储体的数量小于阈值，则读取存储在备用库中的数据。 如果没有银行有要读取的数据，则编程一个备用银行。 如果存储体的数量等于或大于阈值，或者如果执行读取或编程，则确定是否存在要执行的读取或编程命令。 如果要执行读取或编程命令，则从比较步骤重复该过程。 编程可以包括对最高有效位（MSB）页或最低有效位（LSB）页的编程。

    Method of controlling non-volatile memory device
    2.
    发明授权
    Method of controlling non-volatile memory device 有权
    控制非易失性存储器件的方法

    公开(公告)号：US08467262B2

    公开(公告)日：2013-06-18

    申请号：US13116214

    申请日：2011-05-26

    申请人： Hyun-Jin Choi ,  Chan-Ik Park ,  Jeong-Woo Lee ,  Sung-Joo Yoo

    发明人： Hyun-Jin Choi ,  Chan-Ik Park ,  Jeong-Woo Lee ,  Sung-Joo Yoo

    IPC分类号： G11C8/00

    CPC分类号： G11C11/5628 ,  G11C16/0483 ,  G11C16/10

    摘要： A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.

    摘要翻译： 控制非易失性存储器件的方法包括将处于工作状态的存储体的数量与阈值进行比较。 如果存储体的数量小于阈值，则读取存储在备用库中的数据。 如果没有银行有要读取的数据，则编程一个备用银行。 如果存储体的数量等于或大于阈值，或者如果执行读取或编程，则确定是否存在要执行的读取或编程命令。 如果要执行读取或编程命令，则从比较步骤重复该过程。 编程可以包括对最高有效位（MSB）页或最低有效位（LSB）页的编程。

    Device driver including a flash memory file system and method thereof and a flash memory device and method thereof
    3.
    发明授权
    Device driver including a flash memory file system and method thereof and a flash memory device and method thereof 有权
    包括闪速存储器文件系统及其方法的设备驱动程序和闪速存储器件及其方法

    公开(公告)号：US08510500B2

    公开(公告)日：2013-08-13

    申请号：US12926193

    申请日：2010-11-01

    申请人： Min-Soo Moon ,  Chan-Ik Park ,  Prakash Talawar

    发明人： Min-Soo Moon ,  Chan-Ik Park ,  Prakash Talawar

    IPC分类号： G06F12/00

    CPC分类号： G06F12/0246

    摘要： A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.

    摘要翻译： 提供了一种包括闪速存储器文件系统及其方法的设备驱动器和闪速存储器件及其方法。 该示例设备驱动器可以包括：闪速存储器文件系统，被配置为接收被调度以写入闪速存储器件的数据;闪速存储器文件系统，选择闪速存储器件内的第一数据存储区域和第二数据存储区域中的一个， 基于接收到的数据的预期更新频率来写入接收到的数据，第一数据存储区域被配置为存储期望比第二数据存储区域更频繁地更新的数据。 示例性闪存设备可以包括被配置为存储第一数据的第一数据存储区域，具有用于更新的第一预期频率的第一数据和被配置为存储第二数据的第二数据存储区域，第二数据具有第二预期频率的更新 ，第一预期频率高于第二预期频率。

    Method and data storage device for processing commands
    5.
    发明申请
    Method and data storage device for processing commands 有权
    用于处理命令的方法和数据存储设备

    公开(公告)号：US20100153631A1

    公开(公告)日：2010-06-17

    申请号：US12657029

    申请日：2010-01-11

    申请人： Kui-Yon Moon ,  Moon-Wook Oh ,  Do-Geun Kim ,  Chan-Ik Park

    发明人： Kui-Yon Moon ,  Moon-Wook Oh ,  Do-Geun Kim ,  Chan-Ik Park

    IPC分类号： G06F12/00 ,  G06F12/02 ,  G06F11/16 ,  G06F13/14

    CPC分类号： G06F12/0246 ,  G06F12/08 ,  G06F13/1694 ,  G06F2212/7202 ,  G11C11/5628 ,  G11C16/10 ,  G11C2211/5641

    摘要： A data storage device for processing a command includes a host interface and a controller. The host interface stores program information sent within the command from a host. The controller decodes the program information that indicates a memory type to be accessed for the command. In addition, the controller determines whether the specified memory type can be accessed according to the command. The controller performs the command by accessing the memory type when the memory type specified by the program information is available for access.

    摘要翻译： 用于处理命令的数据存储装置包括主机接口和控制器。 主机接口存储从主机发出的命令中发送的程序信息。 控制器对指示要访问的命令的存储器类型的程序信息进行解码。 此外，控制器根据命令确定是否可以访问指定的存储器类型。 当由程序信息指定的存储器类型可用于访问时，控制器通过访问存储器类型执行命令。

    Flash memory control devices that support multiple memory mapping schemes and methods of operating same
    7.
    发明申请
    Flash memory control devices that support multiple memory mapping schemes and methods of operating same 有权
    支持多个内存映射方案的Flash存储器控制设备及其操作方法

    公开(公告)号：US20060179212A1

    公开(公告)日：2006-08-10

    申请号：US11289175

    申请日：2005-11-29

    申请人： Jin-Hyuk Kim ,  Young-Joon Choi ,  Chan-Ik Park

    发明人： Jin-Hyuk Kim ,  Young-Joon Choi ,  Chan-Ik Park

    IPC分类号： G06F12/00

    CPC分类号： G06F12/0246

    摘要： There is provided an apparatus for controlling a flash memory, which includes a memory for storing a plurality of flash translation layers; and a control block for, when an access is requested from outside, determining a pattern of the access, selecting one of the flash translation layers stored in the memory based on the determination result, and managing mapping data of the flash memory based on the selected flash translation layer.

    摘要翻译： 提供了一种用于控制闪速存储器的装置，其包括用于存储多个闪存转换层的存储器; 以及控制块，用于当从外部请求访问时，确定所述访问的模式，基于所述确定结果选择存储在所述存储器中的闪存转换层中的一个，以及基于所选择的所述闪存管理映射数据 闪光翻译层。

    Apparatus and methods using invalidity indicators for buffered memory
    9.
    发明授权
    Apparatus and methods using invalidity indicators for buffered memory 有权
    用于缓冲存储器的无效指示器的装置和方法

    公开(公告)号：US08051258B2

    公开(公告)日：2011-11-01

    申请号：US12860961

    申请日：2010-08-23

    申请人： Chan-Ik Park ,  Sang Lyul Min ,  Tae-Sung Jung ,  Kyun-Ho Kook

    发明人： Chan-Ik Park ,  Sang Lyul Min ,  Tae-Sung Jung ,  Kyun-Ho Kook

    IPC分类号： G06F12/00

    CPC分类号： G06F3/0656 ,  G06F3/0616 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154

    摘要： A storage system includes a storage medium configured to store data and a buffer memory configured to buffer data to be written to the storage medium. The storage system further includes a controller configured to selectively transfer the buffered data to the storage medium responsive to an invalidity indicator received from an external source. For example, the invalidity indicator may comprise unwrite information received from an external source, e.g., information that indicates that selected buffered data corresponds to deleted file data.

    摘要翻译： 存储系统包括被配置为存储数据的存储介质和被配置为缓冲要写入存储介质的数据的缓冲存储器。 存储系统还包括控制器，其被配置为响应于从外部源接收的无效指示符而选择性地将缓冲的数据传送到存储介质。 例如，无效指示符可以包括从外部源接收的重写信息，例如指示所选择的缓冲数据对应于已删除的文件数据的信息。

    Device driver including a flash memory file system and method thereof and a flash memory device and method thereof
    10.
    发明申请
    Device driver including a flash memory file system and method thereof and a flash memory device and method thereof 有权
    包括闪速存储器文件系统及其方法的设备驱动程序和闪速存储器件及其方法

    公开(公告)号：US20110055464A1

    公开(公告)日：2011-03-03

    申请号：US12926193

    申请日：2010-11-01

    申请人： Min-Soo Moon ,  Chan-Ik Park ,  Prakash Talawar

    发明人： Min-Soo Moon ,  Chan-Ik Park ,  Prakash Talawar

    IPC分类号： G06F12/00 ,  G06F12/02

    CPC分类号： G06F12/0246

    摘要： A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.

    摘要翻译： 提供了一种包括闪速存储器文件系统及其方法的设备驱动器和闪速存储器件及其方法。 该示例设备驱动器可以包括：闪速存储器文件系统，被配置为接收被调度以写入闪速存储器件的数据;闪速存储器文件系统，选择闪速存储器件内的第一数据存储区域和第二数据存储区域中的一个， 基于接收到的数据的预期更新频率来写入接收到的数据，第一数据存储区域被配置为存储期望比第二数据存储区域更频繁地更新的数据。 示例性闪存设备可以包括被配置为存储第一数据的第一数据存储区域，具有用于更新的第一预期频率的第一数据和被配置为存储第二数据的第二数据存储区域，第二数据具有第二预期频率的更新 ，第一预期频率高于第二预期频率。