发明授权
- 专利标题: Method of controlling non-volatile memory device
- 专利标题(中): 控制非易失性存储器件的方法
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申请号: US13116214申请日: 2011-05-26
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公开(公告)号: US08467262B2公开(公告)日: 2013-06-18
- 发明人: Hyun-Jin Choi , Chan-Ik Park , Jeong-Woo Lee , Sung-Joo Yoo
- 申请人: Hyun-Jin Choi , Chan-Ik Park , Jeong-Woo Lee , Sung-Joo Yoo
- 申请人地址: KR Suwon-Si, Gyeonggi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si, Gyeonggi-Do
- 代理机构: F. Chau & Associates, LLC
- 主分类号: G11C8/00
- IPC分类号: G11C8/00
摘要:
A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.
公开/授权文献
- US20110292729A1 Method of Controlling Non-Volatile Memory Device 公开/授权日:2011-12-01
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