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公开(公告)号：US09899084B2
公开(公告)日：2018-02-20
申请号：US15412509
申请日：2017-01-23
Applicant: Huawei Technologies Co., Ltd.
Inventor： Zhen Li , Qiang He , Xiangshui Miao , Ronggang Xu , Junfeng Zhao , Shujie Zhang
CPC classification number: G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0097 , G11C2013/0092 , G11C2213/79
Abstract: A data storage method applying to the phase change memory and a phase change memory are provided. After obtaining to-be-stored data, the phase change memory generates an erase pulse signal and a write pulse signal according to the to-be-stored data. The to-be-stored data is multi-bit data. The write pulse signal is a signal including at least two consecutive pulses with a same amplitude. The amplitude of the at least two consecutive pulses is a value determined according to the to-be-stored data. Then, the phase change memory applies the erase pulse signal to a storage unit of the phase change memory to allow the storage unit to switch to a crystalline state. Further, the write pulse signal is applied to the storage unit to allow the storage unit to switch to an amorphous state corresponding to a first resistance value, where the amorphous state represents the to-be-stored data.
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公开(公告)号：US20190068233A1
公开(公告)日：2019-02-28
申请号：US16176556
申请日：2018-10-31
Applicant: Huawei Technologies Co., Ltd.
Inventor： Tobias Berneth , Qiang He
IPC: H04B1/3888 , H04M1/02 , G06F1/16 , H04M1/18
CPC classification number: H04B1/3888 , G06F1/1626 , G06F1/1656 , H04M1/0252 , H04M1/0266 , H04M1/0277 , H04M1/185
Abstract: The terminal housing includes a first panel and a second panel, where a material of the first panel or a material of the second panel is glass. The first panel includes a first main face that is flat and straight and a first side face. The first main face has at least one first vertex angle, the first main face has two margins on two sides of the first vertex angle and connected to the first vertex angle, and cross sections in a through-thickness direction of the first panel and respectively vertical to the two margins connected to the first vertex angle are respectively a first through-thickness cross section and a second through-thickness cross section.
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公开(公告)号：US10177802B2
公开(公告)日：2019-01-08
申请号：US15591664
申请日：2017-05-10
Applicant: Huawei Technologies Co., Ltd.
Inventor： Tobias Berneth , Qiang He
IPC: H04B1/3888 , H04M1/02 , G06F1/16 , H04M1/18
Abstract: The terminal housing includes a first panel and a second panel, where a material of the first panel or a material of the second panel is glass. The first panel includes a first main face that is flat and straight and a first side face. The first main face has at least one first vertex angle, the first main face has two margins on two sides of the first vertex angle and connected to the first vertex angle, and cross sections in a through-thickness direction of the first panel and respectively vertical to the two margins connected to the first vertex angle are respectively a first through-thickness cross section and a second through-thickness cross section.
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公开(公告)号：US09745652B2
公开(公告)日：2017-08-29
申请号：US14143270
申请日：2013-12-30
Applicant: Huawei Technologies Co., Ltd.
CPC classification number: C22C45/10 , C22C1/002 , H01L23/06 , H01L2924/0002 , H05K5/04 , H01L2924/00
Abstract: A Zr-based amorphous alloy is provided; the formula of the Zr-based amorphous alloy is (Zr, Hf, Nb)aCubNicAldRee, where a, b, c, d, and e are corresponding atomic percent content of elements in the Zr-based amorphous alloy, 45≦a≦65, 15≦b≦40, 0.1≦c≦15, 5≦d≦15, 0.05≦e≦5, a+b+c+d+e≦100, and Re is one of or any combination of elements La, Ce, Po, Ho, Er, Nd, Gd, Dy, Sc, Eu, Tm, Tb, Pr, Sm, Yb, and Lu, or Re is combined with Y and one of or any combination of elements La, Ce, Po, Ho, Er, Nd, Gd, Dy, Sc, Eu, Tm, Tb, Pr, Sm, Yb, and Lu.
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公开(公告)号：US20170331507A1
公开(公告)日：2017-11-16
申请号：US15591664
申请日：2017-05-10
Applicant: Huawei Technologies Co., Ltd.
Inventor： Tobias Berneth , Qiang He
IPC: H04B1/3888 , H04M1/02
CPC classification number: H04B1/3888 , G06F1/1626 , G06F1/1656 , H04M1/0252 , H04M1/0266 , H04M1/0277 , H04M1/185
Abstract: The terminal housing includes a first panel and a second panel, where a material of the first panel or a material of the second panel is glass. The first panel includes a first main face that is flat and straight and a first side face. The first main face has at least one first vertex angle, the first main face has two margins on two sides of the first vertex angle and connected to the first vertex angle, and cross sections in a through-thickness direction of the first panel and respectively vertical to the two margins connected to the first vertex angle are respectively a first through-thickness cross section and a second through-thickness cross section.
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Patent Agency Ranking
公开(公告)号：US10454514B2
公开(公告)日：2019-10-22
申请号：US16176556
申请日：2018-10-31
Applicant: Huawei Technologies Co., Ltd.
Inventor： Tobias Berneth , Qiang He
IPC: H04B1/3888 , H04M1/02 , G06F1/16 , H04M1/18
Abstract: The terminal housing includes a first panel and a second panel, where a material of the first panel or a material of the second panel is glass. The first panel includes a first main face that is flat and straight and a first side face. The first main face has at least one first vertex angle, the first main face has two margins on two sides of the first vertex angle and connected to the first vertex angle, and cross sections in a through-thickness direction of the first panel and respectively vertical to the two margins connected to the first vertex angle are respectively a first through-thickness cross section and a second through-thickness cross section.
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公开(公告)号：US10083749B2
公开(公告)日：2018-09-25
申请号：US15412795
申请日：2017-01-23
Applicant: Huawei Technologies Co., Ltd.
Inventor： Zhen Li , Qiang He , Xiangshui Miao , Ronggang Xu , Junfeng Zhao , Zhulin Wei
CPC classification number: G11C13/0069 , G11C7/02 , G11C11/5678 , G11C13/0033 , G11C13/0097 , G11C2013/0092
Abstract: A data storage method applying to a phase change memory and the phase change memory are provided. After obtaining to-be-stored data, the phase change memory (PCM) generates an erase pulse signal and a write pulse signal according to the to-be-stored data. The to-be-stored data is multi-bit data. The write pulse signal includes at least two contiguous pulses. Intervals between the at least two contiguous pulses are the same. The intervals between the at least two contiguous pulses have a value determined according to the to-be-stored data. The PCM applies the erase pulse signal to a storage unit of the PCM to enable the storage unit to change to a crystalline state. Further, the write pulse signal is applied to the storage unit to enable the storage unit to change to an amorphous state corresponding to a first resistance value, where the amorphous state represents the to-be-stored data.
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公开(公告)号：US20170133090A1
公开(公告)日：2017-05-11
申请号：US15412795
申请日：2017-01-23
Applicant: Huawei Technologies Co., Ltd.
Inventor： Zhen Li , Qiang He , Xiangshui Miao , Ronggang Xu , Junfeng Zhao , Zhulin Wei
CPC classification number: G11C13/0069 , G11C7/02 , G11C11/5678 , G11C13/0033 , G11C13/0097 , G11C2013/0092
Abstract: A data storage method applying to a phase change memory and the phase change memory are provided. After obtaining to-be-stored data, the phase change memory (PCM) generates an erase pulse signal and a write pulse signal according to the to-be-stored data. The to-be-stored data is multi-bit data. The write pulse signal includes at least two contiguous pulses. Intervals between the at least two contiguous pulses are the same. The intervals between the at least two contiguous pulses have a value determined according to the to-be-stored data. The PCM applies the erase pulse signal to a storage unit of the PCM to enable the storage unit to change to a crystalline state. Further, the write pulse signal is applied to the storage unit to enable the storage unit to change to an amorphous state corresponding to a first resistance value, where the amorphous state represents the to-be-stored data.
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公开(公告)号：US20170133089A1
公开(公告)日：2017-05-11
申请号：US15412509
申请日：2017-01-23
Applicant: Huawei Technologies Co., Ltd.
Inventor： Zhen Li , Qiang He , Xiangshui Miao , Ronggang Xu , Junfeng Zhao , Shujie Zhang
CPC classification number: G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0097 , G11C2013/0092 , G11C2213/79
Abstract: A data storage method applying to the phase change memory and a phase change memory are provided. After obtaining to-be-stored data, the phase change memory generates an erase pulse signal and a write pulse signal according to the to-be-stored data. The to-be-stored data is multi-bit data. The write pulse signal is a signal including at least two consecutive pulses with a same amplitude. The amplitude of the at least two consecutive pulses is a value determined according to the to-be-stored data. Then, the phase change memory applies the erase pulse signal to a storage unit of the phase change memory to allow the storage unit to switch to a crystalline state. Further, the write pulse signal is applied to the storage unit to allow the storage unit to switch to an amorphous state corresponding to a first resistance value, where the amorphous state represents the to-be-stored data.
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公开(公告)号：US20140146453A1
公开(公告)日：2014-05-29
申请号：US14143270
申请日：2013-12-30
Applicant: Huawei Technologies Co., Ltd.
CPC classification number: C22C45/10 , C22C1/002 , H01L23/06 , H01L2924/0002 , H05K5/04 , H01L2924/00
Abstract: A Zr-based amorphous alloy is provided; the formula of the Zr-based amorphous alloy is (Zr, Hf, Nb)aCubNicAldRee, where a, b, c, d, and e are corresponding atomic percent content of elements in the Zr-based amorphous alloy, 45≦a≦65, 15≦b≦40, 0.1≦c≦15, 5≦d≦15, 0.05≦e≦5, a+b+c+d+e≦100, and Re is one of or any combination of elements La, Ce, Po, Ho, Er, Nd, Gd, Dy, Sc, Eu, Tm, Tb, Pr, Sm, Yb, and Lu, or Re is combined with Y and one of or any combination of elements La, Ce, Po, Ho, Er, Nd, Gd, Dy, Sc, Eu, Tm, Tb, Pr, Sm, Yb, and Lu.
Abstract translation: 提供Zr基非晶合金; Zr基非晶合金的配方为（Zr，Hf，Nb）aCubNicAldRee，其中a，b，c，d和e分别为Zr基非晶态合金中元素的原子百分比含量，45＆nlE; a＆nlE; 65 ，15＆nlE; b＆nlE; 40,0.1＆nlE; c＆nlE; 15,5和nlE; d＆nlE; 15,0.05＆amp; e1; e＆nlE; 5，a + b + c + d + e＆nlE; 100，Re是元素La之一或任何组合 ，Ce，Po，Ho，Er，Nd，Gd，Dy，Sc，Eu，Tm，Tb，Pr，Sm，Yb和Lu，或Re与Y和元素La，Ce， Po，Ho，Er，Nd，Gd，Dy，Sc，Eu，Tm，Tb，Pr，Sm，Yb和Lu。
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