公开(公告)号：US20200328099A1

公开(公告)日：2020-10-15

申请号：US16913010

申请日：2020-06-26

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20210151298A1

公开(公告)日：2021-05-20

申请号：US17160801

申请日：2021-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20240297021A1

公开(公告)日：2024-09-05

申请号：US18026434

申请日：2022-03-09

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Yoshinori YOSHIDA ,  Yutaka KOUZUMA ,  Kazuyuki HIROZANE

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/3344

Abstract: A plasma processing apparatus that can inhibit clustering of gas and supply the gas stably, including an integrated gas box configured to adjust the flow rate of gas, and a discharge portion, and the integrated gas box includes gas blocks including a flow path through which the gas flows, a heater configured to heat the flow path, a bypass path provided in the flow path, and a flow controller configured to detect the inflow amount of the gas and output the gas from the flow path to the discharge portion. The heater is configured to perform heating to a predetermined temperature based on the type of the gas. The predetermined temperature is, for example, 65° C. or more. The bypass path includes a flow path causing a change in the pressure of the gas flowing through the flow path.