公开(公告)号：US20200328099A1

公开(公告)日：2020-10-15

申请号：US16913010

申请日：2020-06-26

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20210151298A1

公开(公告)日：2021-05-20

申请号：US17160801

申请日：2021-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20250112055A1

公开(公告)日：2025-04-03

申请号：US18374224

申请日：2023-09-28

Applicant: Hitachi High-Tech Corporation

Inventor： Nobuya MIYOSHI ,  Nicholas McDowell ,  Ritchie Scott-McCabe

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: A method of etching an SiCO film on a wafer includes a step of supplying the wafer 8 placed on a wafer stage 9 in a processing chamber 7 inside a vacuum container 11 with an oxygen radical or ozone to form an oxide layer 5 on the surface of the SiCO film 1; a step of generating plasma to form a reactive radical from a gas containing CF, and NH3 and thereby modifying the oxide layer 5 into a surface modified layer 6; a step of eliminating and removing the surface modified layer 6; and conducting the oxide layer 5 formation step, the surface modified layer 6 formation step and the surface modified layer 6 elimination and removal step in repetition to etch the SiCO film 1.