公开(公告)号：US20240297046A1

公开(公告)日：2024-09-05

申请号：US18025442

申请日：2022-02-01

Applicant: Hitachi High-Tech Corporation

Inventor： Kazunori SHINODA ,  Hirotaka HAMAMURA ,  Kenji MAEDA ,  Kenetsu YOKOGAWA ,  Thi-Thuy-nga NGUYEN ,  Kenji ISHIKAWA ,  Masaru Hori

IPC: H01L21/3065

CPC classification number: H01L21/3065

Abstract: An etching technology with high uniformity of the amount of etching and improved yields of etching treatment is provided. An etching method for etching a film layer to be treated including SiGe placed on a surface of a wafer, includes: a step of forming a reaction layer including nitrogen-hydrogen bond on a surface of the film layer by supplying reactive particles including fluorine, hydrogen, and nitrogen to the surface of the film layer; and a step of heating the film layer to desorb the reaction layer.

公开(公告)号：US20230386793A1

公开(公告)日：2023-11-30

申请号：US17912943

申请日：2021-02-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Yosuke KUROSAKI ,  Kenji MAEDA ,  Hiroto OTAKE

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/3244 ,  H01L21/31116 ,  H01J37/32834 ,  H01J2237/334

Abstract: Provided are an etching method and an etching apparatus that allow etching processing of a silicon nitride film to be performed at a high etching rate, while maintaining high processing dimension controllability at an atomic layer level, high uniformity in a pattern depth direction, and high selectivity to silicon dioxide. An etching method includes a first step of supplying an etchant containing hydrogen to a sample having a surface at which a silicon nitride is exposed to form a first modified layer in which the hydrogen is bonded to the silicon nitride, a second step of supplying an etchant containing fluorine to the sample to form, over the first modified layer, a second modified layer in which the hydrogen and the fluorine are bonded to the silicon nitride, and a third step of irradiating the first modified layer and the second modified layer with an infrared ray.

公开(公告)号：US20210151298A1

公开(公告)日：2021-05-20

申请号：US17160801

申请日：2021-01-28

Applicant: Hitachi High-Tech Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20240402018A1

公开(公告)日：2024-12-05

申请号：US18025243

申请日：2022-03-16

Applicant: Hitachi High-Tech Corporation

Inventor： Yosuke KUROSAKI ,  Weilin YAN ,  Kenji MAEDA

IPC: G01J5/60

Abstract: A temperature detector capable of detecting temperature of a semiconductor wafer with high accuracy is provided. In standardizing a spectrum of light measured by a photodetector, a controller uses as a local minimum wavelength a wavelength corresponding to bandgap energy of a semiconductor at absolute zero to set as a local minimum value a minimum value of a light intensity in a wavelength region shorter than the local minimum wavelength, uses as a first maximum wavelength a wavelength corresponding to a difference between bandgap energy and thermal energy of a semiconductor at the highest temperature assumed as a temperature measurement range to set as a local maximum value a value obtained by taking a difference with a local minimum value from the maximum value of the light intensity in a wavelength region shorter than the first maximum wavelength, and performs a difference processing with the local minimum value with respect to the spectrum of the measured light to divide it by the local maximum value, thereby standardizing it.