公开(公告)号：US09024284B2

公开(公告)日：2015-05-05

申请号：US14091487

申请日：2013-11-27

Applicant: Hitachi, Ltd.

Inventor： Takasumi Oyanagi ,  Norikatsu Takaura ,  Mitsuharu Tai ,  Masaharu Kinoshita ,  Takahiro Morikawa ,  Kenichi Akita ,  Masahito Kitamura

IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1675

Abstract: A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of Sb2Te3 and GeTe. The phase change memory layer having the superlattice structure includes a Sb2Te3 layer containing Zr in contact with the first electrode.

Abstract translation: 提供能够增加低电阻状态下的电阻的超晶格相变存储器。 相变存储器包括第一电极，设置在第一电极上的第二电极和在第一电极和第二电极之间具有超晶格结构的相变存储层，超晶格结构包括重复形成的Sb 2 Te 3和GeTe层。 具有超晶格结构的相变存储层包括含有与第一电极接触的Zr的Sb2Te3层。

公开(公告)号：US20140151622A1

公开(公告)日：2014-06-05

申请号：US14091487

申请日：2013-11-27

Applicant: Hitachi, Ltd.

Inventor： Takasumi Oyanagi ,  Norikatsu Takaura ,  Mitsuharu Tai ,  Masaharu Kinoshita ,  Takahiro Morikawa ,  Kenichi Akita ,  Masahito Kitamura

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/065 ,  H01L45/1233 ,  H01L45/1675

Abstract: A superlattice phase change memory capable of increasing a resistance in a low resistance state is provided. The phase change memory includes a first electrode, a second electrode provided on the first electrode, and a phase change memory layer having a superlattice structure between the first electrode and the second electrode, the superlattice structure including to repeatedly formed layers of Sb2Te3 and GeTe. The phase change memory layer having the superlattice structure includes a Sb2Te3 layer containing Zr in contact with the first electrode.

Abstract translation: 提供能够增加低电阻状态下的电阻的超晶格相变存储器。 相变存储器包括第一电极，设置在第一电极上的第二电极和在第一电极和第二电极之间具有超晶格结构的相变存储层，超晶格结构包括重复形成的Sb 2 Te 3和GeTe层。 具有超晶格结构的相变存储层包括含有与第一电极接触的Zr的Sb2Te3层。