公开(公告)号：US20030169060A1

公开(公告)日：2003-09-11

申请号：US10379555

申请日：2003-03-06

Applicant: Hitachi, Ltd.

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: G01R031/305

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

公开(公告)号：US20020027440A1

公开(公告)日：2002-03-07

申请号：US09983703

申请日：2001-10-25

Applicant: Hitachi, Ltd.

Inventor： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC: G01R031/305

CPC classification number: G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

Abstract: A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

Abstract translation: 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束的同时，在从电子束照射的时刻起经过规定的时间后，在用电子束照射的部分检测到二次带电粒子，根据这样检测出的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US20020024021A1

公开(公告)日：2002-02-28

申请号：US09982965

申请日：2001-10-22

Applicant: Hitachi, Ltd.

Inventor： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Atsuko Takafuji ,  Hiroshi Toyama ,  Katsuya Sugiyama

IPC: G21G005/00 ,  A61N005/00

CPC classification number: H01J37/28 ,  G01N23/04 ,  H01J2237/2817

Abstract: An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus. To achieve the above object, according to the present invention, there is provided an inspection method using an electron beam, including the steps of; applying a voltage on a sample via a sample stage; converging an electron beam on the sample; scanning the sample with the converged electron beam and simultaneously, continuously moving the sample stage; detecting charged particles generated from the sample; and detecting a defect on the sample on the basis of the detected charged particles; wherein a distance between the sample and the shield frame is determined on the basis of a critical discharge between the sample stage and the shield frame; coils of at least hexapoles for correcting the shape of an electron beam are provided; the electron beam is deflected for blanking during movement of the sample with the crossover of the electron beam taken as a fulcrum of blanking; or the magnitude of the voltage applied to the sample may be determined depending on the kind of sample.

Abstract translation: 本发明的目的是提供一种使用电子束的检查方法及其检查装置，其能够提高分辨率，提高检查速度和可靠性，并实现设备的小型化。 为了实现上述目的，根据本发明，提供一种使用电子束的检查方法，包括以下步骤： 通过样品台对样品施加电压; 将电子束会聚在样品上; 用聚光电子束扫描样品，同时连续移动样品台; 检测从样品产生的带电粒子; 并且基于检测到的带电粒子检测样品上的缺陷; 其中基于所述样品台和所述屏蔽框架之间的临界放电来确定所述样品和所述屏蔽框架之间的距离; 提供了用于校正电子束形状的至少六极的线圈; 电子束在作为消隐支点的电子束交叉的样品移动过程中偏转为消隐; 或者施加到样品的电压的大小可以根据样品的种类来确定。

公开(公告)号：US20040222377A1

公开(公告)日：2004-11-11

申请号：US10865850

申请日：2004-06-14

Applicant: Hitachi, Ltd.

Inventor： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC: H01J037/29

CPC classification number: H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

公开(公告)号：US20030164460A1

公开(公告)日：2003-09-04

申请号：US10400588

申请日：2003-03-28

Applicant: Hitachi, Ltd.

Inventor： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC: G21G005/00 ,  A61N005/00

CPC classification number: H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

Abstract: An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

Abstract translation: 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

公开(公告)号：US20010030294A1

公开(公告)日：2001-10-18

申请号：US09883184

申请日：2001-06-19

Applicant: Hitachi, Ltd.

Inventor： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Hiroshi Toyama

IPC: G21K007/00 ,  G01N023/00 ,  G21G005/00 ,  A61N005/00

CPC classification number: H01J37/28 ,  G01N23/20 ,  G01N23/2251 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/04 ,  H01J37/20 ,  H01J37/265 ,  H01J2237/04756 ,  H01J2237/20221 ,  H01J2237/2444 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01J2237/31766

Abstract: Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.

Abstract translation: 通过提供新颖的检查方法和采用这种新方法的检测装置，本发明通过使用电子束的本发明解决了常规检查方法中遇到的问题和采用该方法的传统装置，该方法能够提高扫描样本的速度 作为半导体晶片。 本发明提供的检验新颖方法包括以下步骤：产生电子束; 通过使用物镜将生成的电子束会聚在样品上; 使用会聚电子束扫描样品; 扫描期间连续移动样品; 检测在样本和物镜之间的位置处从样本发出的带电粒子，并将检测到的带电粒子转换成电信号; 存储由电信号传送的图像信息; 通过使用所存储的图像信息将图像与另一图像进行比较; 并检测样本的缺陷。