Method and apparatus for inspecting patterns of a semiconductor device with an electron beam
    2.
    发明申请
    Method and apparatus for inspecting patterns of a semiconductor device with an electron beam 有权
    用电子束检查半导体器件的图案的方法和装置

    公开(公告)号:US20020024021A1

    公开(公告)日:2002-02-28

    申请号:US09982965

    申请日:2001-10-22

    Applicant: Hitachi, Ltd.

    CPC classification number: H01J37/28 G01N23/04 H01J2237/2817

    Abstract: An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus. To achieve the above object, according to the present invention, there is provided an inspection method using an electron beam, including the steps of; applying a voltage on a sample via a sample stage; converging an electron beam on the sample; scanning the sample with the converged electron beam and simultaneously, continuously moving the sample stage; detecting charged particles generated from the sample; and detecting a defect on the sample on the basis of the detected charged particles; wherein a distance between the sample and the shield frame is determined on the basis of a critical discharge between the sample stage and the shield frame; coils of at least hexapoles for correcting the shape of an electron beam are provided; the electron beam is deflected for blanking during movement of the sample with the crossover of the electron beam taken as a fulcrum of blanking; or the magnitude of the voltage applied to the sample may be determined depending on the kind of sample.

    Abstract translation: 本发明的目的是提供一种使用电子束的检查方法及其检查装置,其能够提高分辨率,提高检查速度和可靠性,并实现设备的小型化。 为了实现上述目的,根据本发明,提供一种使用电子束的检查方法,包括以下步骤: 通过样品台对样品施加电压; 将电子束会聚在样品上; 用聚光电子束扫描样品,同时连续移动样品台; 检测从样品产生的带电粒子; 并且基于检测到的带电粒子检测样品上的缺陷; 其中基于所述样品台和所述屏蔽框架之间的临界放电来确定所述样品和所述屏蔽框架之间的距离; 提供了用于校正电子束形状的至少六极的线圈; 电子束在作为消隐支点的电子束交叉的样品移动过程中偏转为消隐; 或者施加到样品的电压的大小可以根据样品的种类来确定。

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